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Time-of-flight secondary ion mass spectrometry study on Be/Al-based multilayer interferential structures

Thin solid films, 2018-09, Vol.661, p.65-70

2018

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The role of ultra-thin carbon barrier layers for fabrication of La/B4C interferential mirrors: Study by time-of-flight secondary ion mass spectrometry and high-resolution transmission electron microscopy

Thin solid films, 2015-02, Vol.577, p.11-16

2015

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Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

Thin solid films, 2016-05, Vol.607, p.25-31

2016

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Surface morphology, microstructure and electrical properties of Y-Ba-Cu-O thin films

IEEE transactions on applied superconductivity, 1997-06, Vol.7 (2), p.1642-1645

1997

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Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer

Optical materials, 2005-02, Vol.27 (5), p.818-821

2005

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Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Thin solid films, 2008-11, Vol.517 (1), p.385-387

2008

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Room-Temperature Ferromagnetism in (III,Mn)Sb Semiconductors

Solid state phenomena, 2012, Vol.190, p.109-112

2012

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Fabrication and Study of Spin Light-Emitting Nanoheterostructures on the Basis of III-V Semiconductors

Solid state phenomena, 2011, Vol.168-169, p.55-58

2011

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Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors

Solid state phenomena, 2007-10, Vol.131-133, p.613-618

2007

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Friction and scoring under the conditions of Simultaneous rolling and sliding of bodies

Wear, 1968-01, Vol.11 (4), p.291-302

1968

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Relationship between electrical properties and crystallinity of YBa/sub 2/Cu/sub 3/O/sub 7-x/ ultrathin films

IEEE transactions on applied superconductivity, 1997-06, Vol.7 (2), p.1494-1497

1997

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YBaCuO thin films on sapphire up to 2-inch-diameter for microwave applications

IEEE transactions on applied superconductivity, 1995-06, Vol.5 (2), p.1797-1800

1995

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Intense Photoluminescence from Ge(Si) Self-Assembled Islands Embedded in a Tensile-Strained Si Layer

2006 International SiGe Technology and Device Meeting, 2006, p.1-2

2006

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Model of optoelectronic measuring intelligent system

2003 International Conference Physics and Control. Proceedings, 2003, Vol.1, p.172-175 vol.1

2003

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Time-of-flight secondary ion mass spectrometry study on Be/Al-based multilayer interferential structures

The role of ultra-thin carbon barrier layers for fabrication of La/B4C interferential mirrors: Study by time-of-flight secondary ion mass spectrometry and high-resolution transmission electron microscopy

Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

Surface morphology, microstructure and electrical properties of Y-Ba-Cu-O thin films

Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer

Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Room-Temperature Ferromagnetism in (III,Mn)Sb Semiconductors

Fabrication and Study of Spin Light-Emitting Nanoheterostructures on the Basis of III-V Semiconductors

Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors

Friction and scoring under the conditions of Simultaneous rolling and sliding of bodies

Relationship between electrical properties and crystallinity of YBa/sub 2/Cu/sub 3/O/sub 7-x/ ultrathin films

YBaCuO thin films on sapphire up to 2-inch-diameter for microwave applications

Intense Photoluminescence from Ge(Si) Self-Assembled Islands Embedded in a Tensile-Strained Si Layer

Model of optoelectronic measuring intelligent system

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