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Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

Thin solid films, 2016-05, Vol.607, p.25-31

2016

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Homoepitaxial growth of CVD diamond after ICP pretreatment

Physica status solidi. A, Applications and materials science, 2015-11, Vol.212 (11), p.2572-2577

2015

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Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer

Optical materials, 2005-02, Vol.27 (5), p.818-821

2005

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A nanomechanical system with piezoelectric actuation of a GaAs microbeam

Journal of micromechanics and microengineering, 2008-09, Vol.18 (9), p.095006

2008

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Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Thin solid films, 2008-11, Vol.517 (1), p.385-387

2008

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Time-of-flight secondary ion mass spectrometry study on Be/Al-based multilayer interferential structures

Thin solid films, 2018-09, Vol.661, p.65-70

2018

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The role of ultra-thin carbon barrier layers for fabrication of La/B4C interferential mirrors: Study by time-of-flight secondary ion mass spectrometry and high-resolution transmission electron microscopy

Thin solid films, 2015-02, Vol.577, p.11-16

2015

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Study of correlation between the microstructure and phase inhomogeneities of Y-Ba-Cu-O epitaxial films and their DC and microwave properties

Superconductor science & technology, 1999-11, Vol.12 (11), p.908-911, Article 908

1999

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Photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Applied physics letters, 2006-01, Vol.88 (1)

2006

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Transitional phenomena in the lubricated heavily loaded sliding contact of ceramics and steel

Wear, 1995-05, Vol.184 (2), p.179-186

1995

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Growth and properties of GaAs and GaN films and low-dimensional GaAs/QWsInGaAs structures on Si substrates with a Ge buffer layer

Bulletin of the Russian Academy of Sciences. Physics, 2012-09, Vol.76 (9), p.1036-1040

2012

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Photoluminescence of dome and hut shaped Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Applied physics letters, 2007-07, Vol.91 (2), p.021916-021916-3

2007

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A nanomechanical system with piezoelectric actuation of a GaAs microbeam

Journal of micromechanics and microengineering, 2008, Vol.18 (9)

2008

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Surface morphology, microstructure and electrical properties of Y-Ba-Cu-O thin films

IEEE transactions on applied superconductivity, 1997-06, Vol.7 (2), p.1642-1645

1997

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The scoring resistance of sliding metals

Wear, 1981-07, Vol.69 (3), p.299-307

1981

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Photoluminescence of Ge(Si) self-assembled islands embeddedin a tensile-strained Si layer

Applied physics letters, 2006-01, Vol.88 (1), p.011914-011914-3

2006

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Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature

Journal of applied physics, 2005-04, Vol.97 (7), p.076106-076106-3

2005

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Off-axis pulsed laser deposition of CeO2 buffer and YBa2Cu3O7-δ thin film on both sides of a sapphire substrate in a one-step process

Superconductor science & technology, 1997-10, Vol.10 (10), p.766-768

1997

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YBaCuO thin films on sapphire up to 2-inch-diameter for microwave applications

IEEE transactions on applied superconductivity, 1995-06, Vol.5 (2), p.1797-1800

1995

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The Special Features of the Hall Effect in GaMnSb Layers Deposited from a Laser Plasma

Journal of experimental and theoretical physics, 2005, Vol.100 (4), p.742

Rylkov, V. V.

2005

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Infrared lateral photoconductivity of InGaAs quantum dot heterostructures grown by MOCVD

Physica. E, Low-dimensional systems & nanostructures, 2003-04, Vol.17, p.634-635

2003

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Ge self-assembled islands grown on SiGe/Si(0 0 1) relaxed buffer layers

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.466-469

2005

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InGaAsN/GaAs QD and QW structures grown by MOVPE

Journal of crystal growth, 2003-02, Vol.248, p.343-347

2003

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Optical properties of erbium-doped xerogels embedded in porous anodic alumina

Optical materials, 2006-05, Vol.28 (6), p.688-692

2006

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Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands

JETP letters, 2002-09, Vol.76 (6), p.365-369

2002

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Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

Homoepitaxial growth of CVD diamond after ICP pretreatment

Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer

A nanomechanical system with piezoelectric actuation of a GaAs microbeam

Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Time-of-flight secondary ion mass spectrometry study on Be/Al-based multilayer interferential structures

The role of ultra-thin carbon barrier layers for fabrication of La/B4C interferential mirrors: Study by time-of-flight secondary ion mass spectrometry and high-resolution transmission electron microscopy

Study of correlation between the microstructure and phase inhomogeneities of Y-Ba-Cu-O epitaxial films and their DC and microwave properties

Photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Transitional phenomena in the lubricated heavily loaded sliding contact of ceramics and steel

Growth and properties of GaAs and GaN films and low-dimensional GaAs/QWsInGaAs structures on Si substrates with a Ge buffer layer

Photoluminescence of dome and hut shaped Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

A nanomechanical system with piezoelectric actuation of a GaAs microbeam

Surface morphology, microstructure and electrical properties of Y-Ba-Cu-O thin films

The scoring resistance of sliding metals

Photoluminescence of Ge(Si) self-assembled islands embeddedin a tensile-strained Si layer

Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature

Off-axis pulsed laser deposition of CeO2 buffer and YBa2Cu3O7-δ thin film on both sides of a sapphire substrate in a one-step process

YBaCuO thin films on sapphire up to 2-inch-diameter for microwave applications

The Special Features of the Hall Effect in GaMnSb Layers Deposited from a Laser Plasma

Infrared lateral photoconductivity of InGaAs quantum dot heterostructures grown by MOCVD

Ge self-assembled islands grown on SiGe/Si(0 0 1) relaxed buffer layers

InGaAsN/GaAs QD and QW structures grown by MOVPE

Optical properties of erbium-doped xerogels embedded in porous anodic alumina

Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands

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