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Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer‐thin layers

Surface and interface analysis, 2017-02, Vol.49 (2), p.117-121

2017

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(Na, Zr) and (Ca, Zr) Phosphate-Molybdates and Phosphate-Tungstates: II-Radiation Test and Hydrolytic Stability

Materials, 2023-01, Vol.16 (3), p.965

2023

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Pharmacogenetics of Drug Metabolism: The Role of Gene Polymorphism in the Regulation of Doxorubicin Safety and Efficacy

Cancers, 2022-11, Vol.14 (21), p.5436

2022

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NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions

Physica status solidi. A, Applications and materials science, 2018-11, Vol.215 (22), p.n/a

2018

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Decomposition of ultrathin LiF cathode underlayer in organic-based devices evidenced by ToF-SIMS depth profiling

Applied surface science, 2017-11, Vol.422, p.192-197

2017

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A New Approach to TOF-SIMS Analysis of the Phase Composition of Carbon-Containing Materials

Technical physics letters, 2019, Vol.45 (1), p.48-52

2019

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Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

Thin solid films, 2016-05, Vol.607, p.25-31

2016

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New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry

Technical physics letters, 2018-04, Vol.44 (4), p.297-300

2018

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The Use of Pulsed Laser Annealing to Form Ohmic Mo/Ti Contacts to Diamond

Technical physics letters, 2020-06, Vol.46 (6), p.551-555

2020

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Formation of Low-Resistivity Au/Mo/Ti Ohmic Contacts to p-Diamond Epitaxial Layers

Technical physics, 2019-12, Vol.64 (12), p.1827-1836

2019

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A New Limitation of the Depth Resolution in TOF-SIMS Elemental Profiling: the Influence of a Probing Ion Beam

Technical physics letters, 2018-04, Vol.44 (4), p.320-323

2018

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Study of oxidation processes in Mo/Be multilayers

AIP advances, 2018-07, Vol.8 (7), p.075202-075202-12

2018

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Prognostic value of proadrenomedullin in patients with COVID-19 pneumonia

Frontiers in medicine, 2022-08, Vol.9, p.961071-961071

2022

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Features of the Vapor-Phase Epitaxy of GaAs on Nonplanar Substrates

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1147-1149

2020

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SIMS Analysis of Carbon-Containing Materials: Content of Carbon Atoms in sp2 and sp3 Hybridization States

Technical physics letters, 2020, Vol.46 (3), p.290-294

2020

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Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1439-1442

2016

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Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

Thin solid films, 2013-07, Vol.540, p.96-105

2013

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Novel microwave plasma-assisted CVD reactor for diamond delta doping

Physica status solidi. PSS-RRL. Rapid research letters, 2016-04, Vol.10 (4), p.324-327

2016

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Deposition of microcrystalline silicon in electron-cyclotron resonance discharge (24GHz) plasma from silicon tetrafluoride precursor

Thin solid films, 2014-07, Vol.562, p.114-117

2014

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Modification of the Ratio between sp2- to sp3-Hybridized Carbon Components in PECVD Diamond-Like Films

Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (9), p.1047-1050

2020

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Development of a pump-ejector system for SWAG injection into reservoir using associated petroleum gas from the annulus space of production wells

Zapiski Gornogo instituta (1999), 2022-07, Vol.Online first

2022

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CHARACTERIZATION OF INTERFACE LAYERS OF A SOLID SOLUTION FORMED DURING THE GROWTH OF A CARBIDE LAYER ON SILICON FROM HYDROGEN CONTAINING COMPOUNDS

Journal of structural chemistry, 2021-04, Vol.62 (4), p.630-640

2021

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Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1491-1494

2018

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Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry

Technical physics letters, 2017-05, Vol.43 (5), p.477-480

2017

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Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide

Semiconductors (Woodbury, N.Y.), 2021-11, Vol.55 (11), p.865-868

2021

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Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer‐thin layers

(Na, Zr) and (Ca, Zr) Phosphate-Molybdates and Phosphate-Tungstates: II-Radiation Test and Hydrolytic Stability

Pharmacogenetics of Drug Metabolism: The Role of Gene Polymorphism in the Regulation of Doxorubicin Safety and Efficacy

NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions

Decomposition of ultrathin LiF cathode underlayer in organic-based devices evidenced by ToF-SIMS depth profiling

A New Approach to TOF-SIMS Analysis of the Phase Composition of Carbon-Containing Materials

Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry

The Use of Pulsed Laser Annealing to Form Ohmic Mo/Ti Contacts to Diamond

Formation of Low-Resistivity Au/Mo/Ti Ohmic Contacts to p-Diamond Epitaxial Layers

A New Limitation of the Depth Resolution in TOF-SIMS Elemental Profiling: the Influence of a Probing Ion Beam

Study of oxidation processes in Mo/Be multilayers

Prognostic value of proadrenomedullin in patients with COVID-19 pneumonia

Features of the Vapor-Phase Epitaxy of GaAs on Nonplanar Substrates

SIMS Analysis of Carbon-Containing Materials: Content of Carbon Atoms in sp2 and sp3 Hybridization States

Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

Novel microwave plasma-assisted CVD reactor for diamond delta doping

Deposition of microcrystalline silicon in electron-cyclotron resonance discharge (24GHz) plasma from silicon tetrafluoride precursor

Modification of the Ratio between sp2- to sp3-Hybridized Carbon Components in PECVD Diamond-Like Films

Development of a pump-ejector system for SWAG injection into reservoir using associated petroleum gas from the annulus space of production wells

CHARACTERIZATION OF INTERFACE LAYERS OF A SOLID SOLUTION FORMED DURING THE GROWTH OF A CARBIDE LAYER ON SILICON FROM HYDROGEN CONTAINING COMPOUNDS

Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut

Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry

Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide

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