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Optimization of magnetically driven directional solidification of silicon using artificial neural networks and Gaussian process models

Journal of crystal growth, 2017-08, Vol.471, p.53-61

2017

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Application of Artificial Neural Networks in Crystal Growth of Electronic and Opto-Electronic Materials

Crystals (Basel), 2020-08, Vol.10 (8), p.663

2020

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Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films

Applied physics letters, 2022-07, Vol.121 (3)

2022

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Development and Optimization of VGF-GaAs Crystal Growth Process Using Data Mining and Machine Learning Techniques

Crystals (Basel), 2021-10, Vol.11 (10), p.1218

2021

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Artificial Intelligence for Crystal Growth and Characterization

Crystals (Basel), 2022-09, Vol.12 (9), p.1232

2022

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Fast forecasting of VGF crystal growth process by dynamic neural networks

Journal of crystal growth, 2019-09, Vol.521, p.9-14

2019

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Smart Design of Cz-Ge Crystal Growth Furnace and Process

Crystals (Basel), 2022-12, Vol.12 (12), p.1764

2022

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Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC Method

Crystals (Basel), 2023-12, Vol.13 (12), p.1659

2023

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Real Time Predictions of VGF-GaAs Growth Dynamics by LSTM Neural Networks

Crystals (Basel), 2021-01, Vol.11 (2), p.138

2021

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Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach

Crystals (Basel), 2022-01, Vol.12 (1), p.8

2022

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Interface control in vertical Bridgman growth by shaped and flat rotating baffles

Journal of crystal growth, 2019-11, Vol.526, p.125221, Article 125221

2019

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Interface Shape under the Insulating Baffle in Vertical Bridgman Systems

Crystal research and technology (1979), 2022-07, Vol.57 (7), p.n/a

2022

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Unraveling conditions for W-shaped interface and undercooled melts in Cz-Si growth: A smart approach

Journal of crystal growth, 2024-12, Vol.648, p.127897, Article 127897

2024

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Adjustment of resistivity for phosphorus-doped n-type multicrystalline silicon

Solar energy materials and solar cells, 2022-12, Vol.248, p.111989, Article 111989

2022

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Numerical modelling of Cz-β-Ga2O3 crystal growth in reactive atmosphere

Journal of crystal growth, 2024-03, Vol.630, p.127594, Article 127594

2024

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Toward Model-Based Control of the Vertical Gradient Freeze Crystal Growth Process

IEEE transactions on control systems technology, 2022-01, Vol.30 (1), p.384-391

2022

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Quantitative dislocation multiplication law for Ge single crystals based on discrete dislocation dynamics simulations

Computational materials science, 2022-08, Vol.211, p.111537, Article 111537

2022

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Data‐Driven Cz–Si Scale‐Up under Conditions of Partial Similarity

Crystal research and technology (1979), 2024-06, Vol.59 (6), p.n/a

2024

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Accelerated VGF-crystal growth of GaAs under traveling magnetic fields

Journal of crystal growth, 2013-03, Vol.367, p.1-7

2013

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Influence of peripheral vibrations and traveling magnetic fields on VGF growth of Sb-doped Ge crystals

Journal of crystal growth, 2016-11, Vol.453, p.27-33

2016

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Development of the VGF Crystal Growth Recipe: Intelligent Solutions of Ill‐Posed Inverse Problems using Images and Numerical Data

Crystal research and technology (1979), 2023-11, Vol.58 (11)

2023

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Influence of impurities from SiC and TiC crucible cover on directionally solidified silicon

Journal of crystal growth, 2020-07, Vol.542, p.125692, Article 125692

2020

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Enhanced VGF-GaAs growth using pulsed unidirectional TMF

Journal of crystal growth, 2014-01, Vol.386, p.146-153

2014

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Comparison of stirring efficiency of various non-steady magnetic fields during unidirectional solidification of large silicon melts

Journal of crystal growth, 2013-02, Vol.365, p.64-72

2013

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Scale up aspects of directional solidification and Czochralski silicon growth processes in traveling magnetic fields

Journal of crystal growth, 2016-10, Vol.451, p.95-102

2016

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Optimization of magnetically driven directional solidification of silicon using artificial neural networks and Gaussian process models

Application of Artificial Neural Networks in Crystal Growth of Electronic and Opto-Electronic Materials

Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films

Development and Optimization of VGF-GaAs Crystal Growth Process Using Data Mining and Machine Learning Techniques

Artificial Intelligence for Crystal Growth and Characterization

Fast forecasting of VGF crystal growth process by dynamic neural networks

Smart Design of Cz-Ge Crystal Growth Furnace and Process

Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC Method

Real Time Predictions of VGF-GaAs Growth Dynamics by LSTM Neural Networks

Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach

Interface control in vertical Bridgman growth by shaped and flat rotating baffles

Interface Shape under the Insulating Baffle in Vertical Bridgman Systems

Unraveling conditions for W-shaped interface and undercooled melts in Cz-Si growth: A smart approach

Adjustment of resistivity for phosphorus-doped n-type multicrystalline silicon

Numerical modelling of Cz-β-Ga2O3 crystal growth in reactive atmosphere

Toward Model-Based Control of the Vertical Gradient Freeze Crystal Growth Process

Quantitative dislocation multiplication law for Ge single crystals based on discrete dislocation dynamics simulations

Data‐Driven Cz–Si Scale‐Up under Conditions of Partial Similarity

Accelerated VGF-crystal growth of GaAs under traveling magnetic fields

Influence of peripheral vibrations and traveling magnetic fields on VGF growth of Sb-doped Ge crystals

Development of the VGF Crystal Growth Recipe: Intelligent Solutions of Ill‐Posed Inverse Problems using Images and Numerical Data

Influence of impurities from SiC and TiC crucible cover on directionally solidified silicon

Enhanced VGF-GaAs growth using pulsed unidirectional TMF

Comparison of stirring efficiency of various non-steady magnetic fields during unidirectional solidification of large silicon melts

Scale up aspects of directional solidification and Czochralski silicon growth processes in traveling magnetic fields

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