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Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range

Applied physics letters, 2018-04, Vol.112 (15)

2018

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Broadly tunable hetero-cascading quantum cascade lasers: Design, growth, and external cavity operation

Journal of crystal growth, 2019-05, Vol.513, p.1-5

2019

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Towards Vertical GaN-Power ICs: Co-integration of Lateral HEMTs and Vertical Power CAVETs

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.382-385

2024

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Dispersion of effective refractive indices of mid-infrared quantum cascade lasers

Journal of applied physics, 2012-11, Vol.112 (10)

2012

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ETDM Transmitter Module for 100-Gb/s Ethernet

IEEE photonics technology letters, 2010-01, Vol.22 (2), p.70-72

2010

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High-Speed Selector-Driver Using Abrupt Delta-Doped InP/InGaAs/InP DHBTs

IEEE electron device letters, 2011-08, Vol.32 (8), p.1059-1061

2011

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InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation

Electronics letters, 2008, Vol.44 (12), p.705-706, Article 705

2008

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InP DHBT-based modulator driver module for 100 Gbit/s Ethernet applications

Electronics letters, 2009-11, Vol.45 (24), p.1264-1266

2009

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Crystallographic orientation effects on the performance of InP-based heterojunction bipolar transistors

Solid-state electronics, 2010-11, Vol.54 (11), p.1343-1348

2010

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Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation

IEEE transactions on microwave theory and techniques, 2005-11, Vol.53 (11), p.3378-3387

2005

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Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment

Applied physics letters, 1998-08, Vol.73 (5), p.665-667

1998

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Solid source MBE growth on InP-based DHBTs for high-speed data communication

Journal of crystal growth, 2007-04, Vol.301, p.1001-1004

2007

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InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s

IEEE journal of solid-state circuits, 2006-10, Vol.41 (10), p.2215-2223

2006

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AlN based microgenerators for powering implantable sensor devices

Physica status solidi. C, 2011-02, Vol.8 (2), p.476-478

2011

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Buried-Heterostructure Quantum Cascade Lasers Fabricated Using a Sacrificial Layer and a Two-Step Regrowth Process

ECS transactions, 2018, Vol.86 (9), p.23-29

2018

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InP-based DHBT technology for high-speed mixed signal and digital applications

2009 IEEE International Conference on Indium Phosphide & Related Materials, 2009, p.10-15

2009

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Fundamental low phase noise InP-based DHBT VCO operating up to 89 GHz

Electronics letters, 2005-08, Vol.41 (17), p.961-963

2005

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112 Gb/s field trial of complete ETDM system based on monolithically integrated transmitter & receiver modules for use in 100GbE

36th European Conference and Exhibition on Optical Communication, 2010, p.1-3

2010

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Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors

Journal of applied physics, 1997-11, Vol.82 (10), p.5231-5234

1997

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Influence of Built-In Drift Fields on the Performance of InP-Based HBTs Grown by Solid-Source MBE

IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1915-1920

2012

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Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

Applied physics letters, 2012-01, Vol.100 (1), p.014102-014102-4

2012

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Over 80 Gbit/s 2:1 multiplexer and low power selector ICs using InP/InGaAs DHBTs

Electronics letters, 2005-05, Vol.41 (11), p.644-646

2005

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Sensitivity of a 20-GS/s InP DHBT latched comparator

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-4

2010

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Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs∕InP Heterojunction Bipolar Transistors

Journal of the Electrochemical Society, 2011, Vol.158 (12), p.H1279

2011

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High linearity 2-bit current steering InP/GaInAs DHBT digital-to-analog converter

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-4

2010

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Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range

Broadly tunable hetero-cascading quantum cascade lasers: Design, growth, and external cavity operation

Towards Vertical GaN-Power ICs: Co-integration of Lateral HEMTs and Vertical Power CAVETs

Dispersion of effective refractive indices of mid-infrared quantum cascade lasers

ETDM Transmitter Module for 100-Gb/s Ethernet

High-Speed Selector-Driver Using Abrupt Delta-Doped InP/InGaAs/InP DHBTs

InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation

InP DHBT-based modulator driver module for 100 Gbit/s Ethernet applications

Crystallographic orientation effects on the performance of InP-based heterojunction bipolar transistors

Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation

Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment

Solid source MBE growth on InP-based DHBTs for high-speed data communication

InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s

AlN based microgenerators for powering implantable sensor devices

Buried-Heterostructure Quantum Cascade Lasers Fabricated Using a Sacrificial Layer and a Two-Step Regrowth Process

InP-based DHBT technology for high-speed mixed signal and digital applications

Fundamental low phase noise InP-based DHBT VCO operating up to 89 GHz

112 Gb/s field trial of complete ETDM system based on monolithically integrated transmitter & receiver modules for use in 100GbE

Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors

Influence of Built-In Drift Fields on the Performance of InP-Based HBTs Grown by Solid-Source MBE

Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

Over 80 Gbit/s 2:1 multiplexer and low power selector ICs using InP/InGaAs DHBTs

Sensitivity of a 20-GS/s InP DHBT latched comparator

Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs∕InP Heterojunction Bipolar Transistors

High linearity 2-bit current steering InP/GaInAs DHBT digital-to-analog converter

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