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Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.285-292

2017

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Development of a Radiation-Hardened Lateral Power MOSFET for POL Applications

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3456-3462

2009

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Challenges in hardening technologies using shallow-trench isolation

IEEE transactions on nuclear science, 1998-12, Vol.45 (6), p.2584-2592

1998

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Generation of metastable electron traps in the near interfacial region of SOI buried oxides by ion implantation and their effect on device properties

Microelectronic engineering, 2004-04, Vol.72 (1), p.362-366

2004

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Charge collection in SOI capacitors and circuits and its effect on SEU hardness

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2937-2947

2002

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Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2175-2182

2000

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SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.1893-1903

2001

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Single-event upset and snapback in silicon-on-insulator devices and integrated circuits

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2165-2174

2000

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Optimum laboratory radiation source for hardness assurance testing

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2152-2157

2001

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Inhibin A and inhibin B are inversely correlated to follicle-stimulating hormone, yet are discordant during the follicular phase of the rat estrous cycle, and inhibin A is expressed in a sexually dimorphic manner

Endocrinology (Philadelphia), 1996-12, Vol.137 (12), p.5463-5467

1996

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Silicon-on-insulator non-volatile field-effect transistor memory

Microelectronic engineering, 2001-11, Vol.59 (1), p.253-258

2001

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Inhibin A and inhibin B are inversely correlated to follicle-stimulating hormone, yet are discordant during the follicular phase of the rat estrous cycle, and inhibin A is expressed in a sexually dimorphic manner

Endocrinology (Philadelphia), 1996-12, Vol.137 (12), p.5463-5467

1996

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Radiation-induced off-state leakage current in commercial power MOSFETs

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2378-2386

2005

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Identification of Naturally Occurring Follistatin Complexes in Human Biological Fluids

Biology of reproduction, 1999-01, Vol.60 (1), p.8-13

1999

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Structure and expression of a membrane component of the inhibin receptor system

Endocrinology (Philadelphia), 2000-07, Vol.141 (7), p.2600-2607

2000

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A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films

Journal of non-crystalline solids, 1999-09, Vol.254 (1-3), p.1-10

1999

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BUSFET-a radiation-hardened SOI transistor

IEEE transactions on nuclear science, 1999-12, Vol.46 (6), p.1809-1816

1999

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Arsenic ion implant energy effects on CMOS gate oxide hardness

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2387-2391

2005

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A novel method of fabricating integrated FETs for MEMS applications

Journal of microelectromechanical systems, 2004-06, Vol.13 (3), p.500-504

2004

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Identification of an Inhibin Receptor in Gonadal Tumors from Inhibin α-Subunit Knockout Mice

The Journal of biological chemistry, 1998-01, Vol.273 (1), p.398-403

1998

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Impact of technology trends on SEU in CMOS SRAMs

IEEE transactions on nuclear science, 1996-12, Vol.43 (6), p.2797-2804

1996

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Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance

IEEE transactions on nuclear science, 2016-12

2016

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Mass enhancement of two-dimensional electrons in thin-oxide Si-MOSFET’s

Physical review. B, Condensed matter, 1999-04, Vol.59 (15), p.10208-10211

1999

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Comparison of enhanced device response and predicted X-ray dose enhancement effects on MOS oxides

IEEE transactions on nuclear science, 1988-12, Vol.35 (6), p.1265-1271

1988

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An all-implanted, self-aligned, GaAs JFET with nonalloyed W/p+-GaAs ohmic gate contact

IEEE transactions on electron devices, 1994-07, Vol.41 (7), p.1078-1082

1994

Volltextzugriff (PDF)

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Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

Development of a Radiation-Hardened Lateral Power MOSFET for POL Applications

Challenges in hardening technologies using shallow-trench isolation

Generation of metastable electron traps in the near interfacial region of SOI buried oxides by ion implantation and their effect on device properties

Charge collection in SOI capacitors and circuits and its effect on SEU hardness

Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides

SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

Single-event upset and snapback in silicon-on-insulator devices and integrated circuits

Optimum laboratory radiation source for hardness assurance testing

Inhibin A and inhibin B are inversely correlated to follicle-stimulating hormone, yet are discordant during the follicular phase of the rat estrous cycle, and inhibin A is expressed in a sexually dimorphic manner

Silicon-on-insulator non-volatile field-effect transistor memory

Inhibin A and inhibin B are inversely correlated to follicle-stimulating hormone, yet are discordant during the follicular phase of the rat estrous cycle, and inhibin A is expressed in a sexually dimorphic manner

Radiation-induced off-state leakage current in commercial power MOSFETs

Identification of Naturally Occurring Follistatin Complexes in Human Biological Fluids

Structure and expression of a membrane component of the inhibin receptor system

A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films

BUSFET-a radiation-hardened SOI transistor

Arsenic ion implant energy effects on CMOS gate oxide hardness

A novel method of fabricating integrated FETs for MEMS applications

Identification of an Inhibin Receptor in Gonadal Tumors from Inhibin α-Subunit Knockout Mice

Impact of technology trends on SEU in CMOS SRAMs

Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance

Mass enhancement of two-dimensional electrons in thin-oxide Si-MOSFET’s

Comparison of enhanced device response and predicted X-ray dose enhancement effects on MOS oxides

An all-implanted, self-aligned, GaAs JFET with nonalloyed W/p+-GaAs ohmic gate contact

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