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Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas

Nano letters, 2019-06, Vol.19 (6), p.3770-3776

2019

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Design and Simulation of Near-Terahertz GaN Photoconductive Switches-Operation in the Negative Differential Mobility Regime and Pulse Compression

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.521-532

2021

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Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures

RSC advances, 2018-01, Vol.8 (52), p.29976-29979

2018

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Profile Evolution of High Aspect Ratio Silicon Carbide Trenches by Inductive Coupled Plasma Etching

Journal of microelectromechanical systems, 2017-02, Vol.26 (1), p.135-142

2017

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Evaluation of Fe-βGa2O3 for Photoconductive Semiconductor Switching

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1535-1540

2024

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Design considerations for gallium arsenide pulse compression photoconductive switch

Journal of applied physics, 2022-04, Vol.131 (13)

2022

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InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments

Sensors and actuators. A. Physical., 2017-08, Vol.263, p.216-223

2017

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Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

IEEE sensors journal, 2019-05, Vol.19 (10), p.3640-3646

2019

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Low Offset and Noise in High Biased GaN 2DEG Hall-Effect Plates Investigated With Infrared Microscopy

Journal of microelectromechanical systems, 2020-10, Vol.29 (5), p.669-676

2020

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Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation

Applied physics letters, 2017-12, Vol.111 (24)

2017

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Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

IEEE journal of emerging and selected topics in power electronics, 2023-08, Vol.11 (4), p.3957-3982

2023

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Lithography-free microfabrication of AlGaN/GaN 2DEG strain sensors using laser ablation and direct wire bonding

Microelectronic engineering, 2017-04, Vol.173, p.54-57

2017

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Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall Plates Using Current Spinning

IEEE sensors letters, 2019-03, Vol.3 (3), p.1-4

2019

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3D Hall-Effect Magnetometer Using a Single Inverted Pyramid Structure

2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS), 2024, p.48-51

2024

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Design considerations for gallium arsenide pulse compression photoconductive switch

Journal of applied physics, 2022-04, Vol.131 (13)

2022

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A Prony-Based Curve-Fitting Method for Characterization of RF Pulses From Optoelectronic Devices

IEEE signal processing letters, 2022, Vol.29, p.364-368

2022

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Evaluation of Fe-βGa 2 O 3 for Photoconductive Semiconductor Switching

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1535-1540

2024

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Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures

Materials & design, 2018-10, Vol.156, p.441-445

2018

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Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure

Materials & design, 2018-10, Vol.156, p.16-21

2018

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Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation

Advanced engineering materials, 2020-04, Vol.22 (4), p.n/a

2020

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Multilayer etch masks for 3-dimensional fabrication of robust silicon carbide microstructures

2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 2015, p.284-287

2015

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Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperaturesElectronic supplementary information (ESI) available. See DOI: 10.1039/c8ra05797d

2018-08

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High-throughput pulsed laser manufacturing etch process for complex and released structures from bulk 4H-SiC

2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS), 2017, p.671-674

2017

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Low-temperature and pressure response of InAlN/GaN ring-shaped high electron mobility transistors

2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2017, p.786-789

2017

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Kerr constants and dielectric polarisations of amides and thioamides in water and dioxane solutions

Journal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1988, Vol.84 (11), p.4169-4179

1988

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Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas

Design and Simulation of Near-Terahertz GaN Photoconductive Switches-Operation in the Negative Differential Mobility Regime and Pulse Compression

Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures

Profile Evolution of High Aspect Ratio Silicon Carbide Trenches by Inductive Coupled Plasma Etching

Evaluation of Fe-βGa2O3 for Photoconductive Semiconductor Switching

Design considerations for gallium arsenide pulse compression photoconductive switch

InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments

Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

Low Offset and Noise in High Biased GaN 2DEG Hall-Effect Plates Investigated With Infrared Microscopy

Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation

Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

Lithography-free microfabrication of AlGaN/GaN 2DEG strain sensors using laser ablation and direct wire bonding

Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall Plates Using Current Spinning

3D Hall-Effect Magnetometer Using a Single Inverted Pyramid Structure

Design considerations for gallium arsenide pulse compression photoconductive switch

A Prony-Based Curve-Fitting Method for Characterization of RF Pulses From Optoelectronic Devices

Evaluation of Fe-βGa 2 O 3 for Photoconductive Semiconductor Switching

Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures

Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure

Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation

Multilayer etch masks for 3-dimensional fabrication of robust silicon carbide microstructures

Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperaturesElectronic supplementary information (ESI) available. See DOI: 10.1039/c8ra05797d

High-throughput pulsed laser manufacturing etch process for complex and released structures from bulk 4H-SiC

Low-temperature and pressure response of InAlN/GaN ring-shaped high electron mobility transistors

Kerr constants and dielectric polarisations of amides and thioamides in water and dioxane solutions

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