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Increasing Malnutrition Identification and Coding Through Process Improvement

Journal of the Academy of Nutrition and Dietetics, 2019-09, Vol.119 (9), p.S64-S64

2019

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High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

IEEE electron device letters, 1999-04, Vol.20 (4), p.161-163

1999

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Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy

Applied physics letters, 1995-10, Vol.67 (16), p.2284-2286

1995

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Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy

Applied physics letters, 1995-03, Vol.66 (10), p.1252-1254

1995

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The growth and properties of Al and AlN films on GaN(0001)–(1×1)

Journal of applied physics, 1996-01, Vol.79 (1), p.110-119

1996

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Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

Electronics letters, 1997-08, Vol.33 (18), p.1556

1997

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H, He, and N implant isolation of n-type GaN

Journal of applied physics, 1995-09, Vol.78 (5), p.3008-3011

1995

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GaN FETs for microwave and high-temperature applications

Solid-state electronics, 1997-02, Vol.41 (2), p.177-180

1997

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Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy

Applied physics letters, 1998-07, Vol.73 (4), p.493-495

1998

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Gain characteristics of InGaN/GaN quantum well diode lasers

Applied physics letters, 1998-03, Vol.72 (12), p.1418-1420

1998

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Silicon doping of GaN using disilane

Applied physics letters, 1995-03, Vol.66 (12), p.1495-1497

1995

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Microwave performance of GaN MESFETs

Electronics letters, 1994-07, Vol.30 (15), p.1248-1249

1994

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Photoluminescence from wurtzite GaN under hydrostatic pressure

Applied physics letters, 1995-07, Vol.67 (3), p.380-382

1995

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Low-frequency dispersion characteristics of GaN HFETs

Electronics letters, 1995-10, Vol.31 (22), p.1951-1952

1995

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Electrical characterisation of Ti Schottky barriers on n-type GaN

Electronics letters, 1994-05, Vol.30 (11), p.909-911

1994

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The influence of CH4/H2/Ar plasma etching on the conductivity of n -type gallium nitride

Journal of applied physics, 1995-11, Vol.78 (10), p.6132-6134

1995

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Observation of nanopipes in α-GaN crystals

Journal of crystal growth, 1995-06, Vol.151 (3), p.396-400

1995

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The effect of organometallic vapor phase epitaxial growth conditions of Wurtzite GaN electron transport properties

Journal of electronic materials, 1995-11, Vol.24 (11), p.1525-1530

1995

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The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire

Journal of electronic materials, 1995-04, Vol.24 (4), p.269-273

1995

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Doping of gallium nitride using disilane

Journal of electronic materials, 1995-11, Vol.24 (11), p.1547-1550

1995

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Status of Nitride Based Light Emitting and Laser Diodes on SiC

MRS proceedings, 1997, Vol.482, Article 1169

1997

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Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide

Materials science forum, 2000-05, Vol.338-342, p.1643-1646

2000

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Effect of Aluminum Nitride Buffer Layer Temperature on Gallium Nitride Grown by OMVPE

MRS proceedings, 1994, Vol.339, Article 477

1994

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Excitonic Recombination Processes in Undoped and Doped Wurtzite GaN Films Deposited on Sapphire Substrates

MRS proceedings, 1996, Vol.395, Article 485

1996

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Preparation and characterization of copper zinc germanium sulfide selenide (Cu2ZnGeS4-ySey)

Chemistry of materials, 1990-03, Vol.2 (2), p.194-197

1990

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Increasing Malnutrition Identification and Coding Through Process Improvement

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy

Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy

The growth and properties of Al and AlN films on GaN(0001)–(1×1)

Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

H, He, and N implant isolation of n-type GaN

GaN FETs for microwave and high-temperature applications

Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy

Gain characteristics of InGaN/GaN quantum well diode lasers

Silicon doping of GaN using disilane

Microwave performance of GaN MESFETs

Photoluminescence from wurtzite GaN under hydrostatic pressure

Low-frequency dispersion characteristics of GaN HFETs

Electrical characterisation of Ti Schottky barriers on n-type GaN

The influence of CH4/H2/Ar plasma etching on the conductivity of n -type gallium nitride

Observation of nanopipes in α-GaN crystals

The effect of organometallic vapor phase epitaxial growth conditions of Wurtzite GaN electron transport properties

The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire

Doping of gallium nitride using disilane

Status of Nitride Based Light Emitting and Laser Diodes on SiC

Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide

Effect of Aluminum Nitride Buffer Layer Temperature on Gallium Nitride Grown by OMVPE

Excitonic Recombination Processes in Undoped and Doped Wurtzite GaN Films Deposited on Sapphire Substrates

Preparation and characterization of copper zinc germanium sulfide selenide (Cu2ZnGeS4-ySey)

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