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Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices

Physica status solidi. A, Applications and materials science, 2020-02, Vol.217 (3), p.n/a

2020

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A New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-Stacks

Solid state phenomena, 2018-08, Vol.282, p.113-118

2018

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Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Journal of applied physics, 2014-12, Vol.116 (21)

2014

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(Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration

ECS transactions, 2018-07, Vol.86 (7), p.163-175

2018

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Polarization Dependence of the C 1s X-ray Absorption Spectra of Individual Multi-Walled Carbon Nanotubes

Small (Weinheim an der Bergstrasse, Germany), 2008-12, Vol.4 (12), p.2279-2285

2008

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Oxygen Scavenging by Ta Spacers in Double-MgO Free Layers for Perpendicular Spin-Transfer Torque Magnetic Random-Access Memory

IEEE magnetics letters, 2016, Vol.7, p.1-4

2016

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Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments

ECS transactions, 2011, Vol.41 (7), p.239-248

2011

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Bipolar device fabrication using a scanning tunnelling microscope

Nature electronics, 2020-09, Vol.3 (9), p.524-530

2020

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Self Focusing SIMS: Probing thin film composition in very confined volumes

Applied surface science, 2016-03, Vol.365, p.143-152

2016

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Composition analysis of III–V materials grown in nanostructures: The self-focusing-SIMS approach

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2016-05, Vol.34 (3)

2016

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Scanning transmission X-ray microscopy of multi-walled carbon nanotubes

Journal of physics. Conference series, 2009-09, Vol.186 (1), p.012106

2009

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Investigation of Low Temperature Epitaxial SiGe:P in View of Source/Drain Application for 5nm Technology Node and Below

ECS transactions, 2020-09, Vol.98 (5), p.43-50

2020

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On the local conductivity of individual diamond seeds and their impact on the interfacial resistance of boron-doped diamond films

Carbon (New York), 2014-11, Vol.79, p.103-112

2014

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Molecular depth-profiling of polycarbonate with low-energy Cs+ ions

Rapid communications in mass spectrometry, 2007-08, Vol.21 (16), p.2680-2684

2007

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Contact Resistivity of Highly Doped Si:P, Si:As, and Si:P:As Epi Layers for Source/Drain Epitaxy

ECS transactions, 2020-09, Vol.98 (5), p.37-42

2020

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Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

Applied surface science, 2015-01, Vol.324, p.251-257

2015

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Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

Applied surface science, 2016-10, Vol.384, p.152-160

2016

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Suppression of boron incorporation at the early growth phases of boron-doped diamond thin films

Physica status solidi. A, Applications and materials science, 2015-11, Vol.212 (11), p.2595-2599

2015

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Characterization of Highly Doped Si:P, Si:As and Si:P:As Epi Layers for Source/Drain Epitaxy

ECS transactions, 2019-10, Vol.93 (1), p.11-15

2019

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Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge 1−x Sn x and Si y Ge 1−x−y Sn x

ECS journal of solid state science and technology, 2020-01, Vol.9 (4), p.44010

2020

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Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition

IEEE transactions on electron devices, 2012-03, Vol.59 (3), p.602-609

2012

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Simulation of the Phosphorus Profiles in a c-Si Solar Cell Fabricated Using POCl3 Diffusion or Ion Implantation and Annealing

Energy procedia, 2013, Vol.38, p.263-269

2013

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A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2935-2943

2014

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The Impact of Dummy Gate Processing on Si-Cap-Free SiGe Passivation: A Physical Characterization Study on Strained SiGe 25% and 45

ECS transactions, 2017, Vol.80 (2), p.155-162

2017

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(Invited) Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures

ECS transactions, 2017, Vol.80 (4), p.241-252

2017

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Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices

A New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-Stacks

Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

(Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration

Polarization Dependence of the C 1s X-ray Absorption Spectra of Individual Multi-Walled Carbon Nanotubes

Oxygen Scavenging by Ta Spacers in Double-MgO Free Layers for Perpendicular Spin-Transfer Torque Magnetic Random-Access Memory

Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments

Bipolar device fabrication using a scanning tunnelling microscope

Self Focusing SIMS: Probing thin film composition in very confined volumes

Composition analysis of III–V materials grown in nanostructures: The self-focusing-SIMS approach

Scanning transmission X-ray microscopy of multi-walled carbon nanotubes

Investigation of Low Temperature Epitaxial SiGe:P in View of Source/Drain Application for 5nm Technology Node and Below

On the local conductivity of individual diamond seeds and their impact on the interfacial resistance of boron-doped diamond films

Molecular depth-profiling of polycarbonate with low-energy Cs+ ions

Contact Resistivity of Highly Doped Si:P, Si:As, and Si:P:As Epi Layers for Source/Drain Epitaxy

Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

Suppression of boron incorporation at the early growth phases of boron-doped diamond thin films

Characterization of Highly Doped Si:P, Si:As and Si:P:As Epi Layers for Source/Drain Epitaxy

Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge 1−x Sn x and Si y Ge 1−x−y Sn x

Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition

Simulation of the Phosphorus Profiles in a c-Si Solar Cell Fabricated Using POCl3 Diffusion or Ion Implantation and Annealing

A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond

The Impact of Dummy Gate Processing on Si-Cap-Free SiGe Passivation: A Physical Characterization Study on Strained SiGe 25% and 45

(Invited) Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures

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