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Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Journal of physics. D, Applied physics, 2007-10, Vol.40 (20), p.6328-6344

2007

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Recombination coefficients of GaN-based laser diodes

Journal of applied physics, 2011-05, Vol.109 (9), p.093106-093106-6

2011

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Low temperature p- type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Applied physics letters, 2014-12, Vol.105 (24)

2014

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Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

Physica Status Solidi (b), 2005-09, Vol.242 (11), p.2326-2344

2005

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Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode

Journal of applied physics, 2005-04, Vol.97 (8), p.084505-084505-6

2005

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Broadband blue superluminescent light-emitting diodes based on GaN

Applied physics letters, 2009-08, Vol.95 (8), p.081107-081107-3

2009

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Crack-free highly reflective AlInN∕AlGaN Bragg mirrors for UV applications

Applied physics letters, 2006-01, Vol.88 (5)

2006

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Static and dynamic properties of multi-section InGaN-based laser diodes

Journal of applied physics, 2012-11, Vol.112 (10)

2012

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Recent Progress in the Growth of Highly Reflective Nitride-Based Distributed Bragg Reflectors and Their Use in Microcavities

Japanese Journal of Applied Physics, 2005-10, Vol.44 (10R), p.7207

2005

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Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure

Electronics letters, 2007, Vol.43 (17), p.924-926

2007

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Mode locking in monolithic two-section InGaN blue-violet semiconductor lasers

Applied physics letters, 2013-03, Vol.102 (12)

2013

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Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

Applied physics letters, 2010-09, Vol.97 (11)

2010

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Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers

Electronics letters, 2005-01, Vol.41 (2), p.94-95

2005

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Selective oxidation of AlInN layers for current confinement in III-nitride devices

Applied physics letters, 2005-08, Vol.87 (7), p.072102-072102-3

2005

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Efficient current injection scheme for nitride vertical cavity surface emitting lasers

Applied physics letters, 2007-01, Vol.90 (3), p.033514-033514-3

2007

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The geomorphometry of endorheic drainage basins: implications for interpreting and modelling their evolution

Earth surface processes and landforms, 2013-12, Vol.38 (15), p.1881-1896

2013

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Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Electronics letters, 2008, Vol.44 (8), p.521-522

2008

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Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors

Applied physics letters, 2005-01, Vol.86 (3), p.031107-031107-3

2005

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InGaN/GaN resonant-cavity LED including an AlInN/GaN Bragg mirror

Physica status solidi. A, Applied research, 2004-09, Vol.201 (12), p.2675-2678

2004

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First InGaN/GaN thin film LED using SiCOI engineered substrate

Physica status solidi. C, 2006-06, Vol.3 (6), p.2227-2230

2006

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Emission characteristics of GaN-based blue lasers including a lattice matched Al 0.83 In 0.17 N optical blocking layer for improved opticalbeam quality

Applied physics letters, 2010-09, Vol.97 (11), p.111104-111104-3

2010

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Optical bistability in InGaN-based multisection laser diodes

Applied physics letters, 2011-05, Vol.98 (19), p.191115-191115-3

2011

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Blue laser diodes including lattice-matched Al^sub 0.83^In^sub 0.17^N bottom cladding layer

Electronics letters, 2008-04, Vol.44 (8), p.1

2008

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Blue laser diodes including lattice-matched Al sub( 0.83)In sub( 0.17)N bottom cladding layer

Electronics letters, 2008-04, Vol.44 (8), p.1-1

2008

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Crack-free highly reflective Al In N ∕ Al Ga N Bragg mirrors for UV applications

Applied physics letters, 2006-01, Vol.88 (5), p.051108-051108-3

2006

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Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Recombination coefficients of GaN-based laser diodes

Low temperature p- type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode

Broadband blue superluminescent light-emitting diodes based on GaN

Crack-free highly reflective AlInN∕AlGaN Bragg mirrors for UV applications

Static and dynamic properties of multi-section InGaN-based laser diodes

Recent Progress in the Growth of Highly Reflective Nitride-Based Distributed Bragg Reflectors and Their Use in Microcavities

Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure

Mode locking in monolithic two-section InGaN blue-violet semiconductor lasers

Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers

Selective oxidation of AlInN layers for current confinement in III-nitride devices

Efficient current injection scheme for nitride vertical cavity surface emitting lasers

The geomorphometry of endorheic drainage basins: implications for interpreting and modelling their evolution

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors

InGaN/GaN resonant-cavity LED including an AlInN/GaN Bragg mirror

First InGaN/GaN thin film LED using SiCOI engineered substrate

Emission characteristics of GaN-based blue lasers including a lattice matched Al 0.83 In 0.17 N optical blocking layer for improved opticalbeam quality

Optical bistability in InGaN-based multisection laser diodes

Blue laser diodes including lattice-matched Al^sub 0.83^In^sub 0.17^N bottom cladding layer

Blue laser diodes including lattice-matched Al sub( 0.83)In sub( 0.17)N bottom cladding layer

Crack-free highly reflective Al In N ∕ Al Ga N Bragg mirrors for UV applications

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