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Thermoelectrical properties of ternary lead chalcogenide plumbum-selenium-tellurium thin films with excess of tellurium prepared by plasma-chemical vapor deposition

Thin solid films, 2022-06, Vol.752, p.139244, Article 139244

2022

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Effect of pulsed laser annealing on the properties of (Ga,Mn)As layers

Journal of magnetism and magnetic materials, 2022-08, Vol.556, p.169360, Article 169360

2022

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GaAs diodes for TiT2-based betavoltaic cells

Applied radiation and isotopes, 2022-01, Vol.179, p.110030-110030, Article 110030

2022

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High-Efficiency Spark Plasma Sintered Ge 0.3 Si 0.7 :P Thermoelectric Energy Converters with Silicone Phosphide as a Source of Phosphorus Doping

Nanoscale and microscale thermophysical engineering, 2023-04, Vol.27 (2), p.125-134

2023

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Formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb diluted magnetic semiconductors layers

Journal of magnetism and magnetic materials, 2019-10, Vol.487, p.165321, Article 165321

2019

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On the mechanism of cross-hatch pattern formation in heterostructures with a small lattice mismatch

Applied surface science, 2019-06, Vol.479, p.930-941

2019

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Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration

Journal of magnetism and magnetic materials, 2019-09, Vol.485, p.236-243

2019

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The study of Si/Ge interdiffusion using molecular dynamics simulation

Journal of physics. Conference series, 2020-12, Vol.1695 (1), p.12036

2020

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The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer

Journal of magnetism and magnetic materials, 2019-05, Vol.478, p.84-90

2019

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High-Efficiency Spark Plasma Sintered Ge0.3Si0.7:P Thermoelectric Energy Converters with Silicone Phosphide as a Source of Phosphorus Doping

Nanoscale and microscale thermophysical engineering, 2023-04, Vol.27 (2), p.125-134

2023

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Tunneling and injection in ferromagnetic structures InGaAs/GaAs

Physics of the solid state, 2016-11, Vol.58 (11), p.2271

2016

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Fabrication and luminescent properties of(In,Fe)Sb/GaAs/InGaAs diodes

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12053

2019

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In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique

Semiconductors (Woodbury, N.Y.), 2019-09, Vol.53 (9), p.1158-1163

2019

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Properties of CoPt ferromagnetic layers for application in spin light-emitting diodes

Physics of the solid state, 2016-11, Vol.58 (11), p.2267-2270

2016

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Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions

Semiconductors (Woodbury, N.Y.), 2018-08, Vol.52 (8), p.1004-1011

2018

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On the crystal structure and thermoelectric properties of thin [Si.sub.1-x][Mn.sub.x] films

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1453

2016

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Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties

Technical physics, 2017-09, Vol.62 (9), p.1398-1402

2017

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Thermoelectric effects in nanoscale layers of manganese silicide

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1403-1408

2017

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Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1448-1452

2015

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Coherent spin dynamics of carriers in ferromagnetic semiconductor heterostructures with an Mn [delta] layer

Journal of experimental and theoretical physics, 2016-09, Vol.123 (3), p.420

2016

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Effect of the Dopant Concentration on the Luminescence Properties of InGaAs/GaAs Spin Light-Emitting Diodes with a Mn [delta] Layer

Semiconductors (Woodbury, N.Y.), 2016-01, Vol.50 (1), p.1

2016

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Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence

Technical physics, 2017-10, Vol.62 (10), p.1545-1550

2017

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CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures

Semiconductors (Woodbury, N.Y.), 2015-12, Vol.49 (12), p.1601-1604

2015

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Features of the selective manganese doping of GaAs structures

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1415-1419

2017

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Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1430-1434

2015

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Thermoelectrical properties of ternary lead chalcogenide plumbum-selenium-tellurium thin films with excess of tellurium prepared by plasma-chemical vapor deposition

Effect of pulsed laser annealing on the properties of (Ga,Mn)As layers

GaAs diodes for TiT2-based betavoltaic cells

High-Efficiency Spark Plasma Sintered Ge 0.3 Si 0.7 :P Thermoelectric Energy Converters with Silicone Phosphide as a Source of Phosphorus Doping

Formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb diluted magnetic semiconductors layers

On the mechanism of cross-hatch pattern formation in heterostructures with a small lattice mismatch

Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration

The study of Si/Ge interdiffusion using molecular dynamics simulation

The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer

High-Efficiency Spark Plasma Sintered Ge0.3Si0.7:P Thermoelectric Energy Converters with Silicone Phosphide as a Source of Phosphorus Doping

Tunneling and injection in ferromagnetic structures InGaAs/GaAs

Fabrication and luminescent properties of(In,Fe)Sb/GaAs/InGaAs diodes

In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique

Properties of CoPt ferromagnetic layers for application in spin light-emitting diodes

Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions

On the crystal structure and thermoelectric properties of thin [Si.sub.1-x][Mn.sub.x] films

Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties

Thermoelectric effects in nanoscale layers of manganese silicide

Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier

Coherent spin dynamics of carriers in ferromagnetic semiconductor heterostructures with an Mn [delta] layer

Effect of the Dopant Concentration on the Luminescence Properties of InGaAs/GaAs Spin Light-Emitting Diodes with a Mn [delta] Layer

Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence

CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures

Features of the selective manganese doping of GaAs structures

Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

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