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Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

Scientific reports, 2019-01, Vol.9 (1), p.202-202, Article 202

2019

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An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III-V NMOS

IEEE electron device letters, 2012-04, Vol.33 (4), p.501-503

2012

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Origin of high critical currents in YBa2Cu3O(7-delta) superconducting thin films

Nature (London), 1999-06, Vol.399 (6735), p.439-442

1999

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Origin of high critical currents in YBa2Cu3O7-δ superconducting thin films

Nature (London), 1999-06, Vol.399 (6735), p.439-442

1999

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Growth of heterostructures on InAs for high mobility device applications

Journal of crystal growth, 2013-09, Vol.378, p.117-120

2013

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InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

Applied physics letters, 2013-09, Vol.103 (14)

2013

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Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope

IEEE electron device letters, 2007-03, Vol.28 (3), p.217-219

2007

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High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

AIP advances, 2014-04, Vol.4 (4), p.047108-047108-9

2014

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Detailed modeling of sub-100-nm MOSFETs based on schrödinger DD per subband and experiments and evaluation of the performance gap to ballistic transport

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1851-1858

2005

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Scaling of characteristic frequencies in RF CMOS

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2102-2108

2004

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Experimental Investigation of Optimum Gate Workfunction for CMOS Four-Terminal Multigate MOSFETs (MUGFETs)

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1431-1437

2007

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Classification and benchmarking of III-V MOSFETs for CMOS

2010 Symposium on VLSI Technology, 2010, p.155-156

2010

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Genetic Susceptibility to Respiratory Syncytial Virus Bronchiolitis Is Predominantly Associated with Innate Immune Genes

The Journal of infectious diseases, 2007-09, Vol.196 (6), p.826-834

2007

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Independent double-gate FinFETs with asymmetric gate stacks

Microelectronic engineering, 2007-09, Vol.84 (9), p.2097-2100

2007

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Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs

2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.21.1.1-21.1.4

2018

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Detailed modeling of sub-100-nm MOSFETs based on Schro/spl uml/dinger DD per subband and experiments and evaluation of the performance gap to ballistic transport

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1851-1858

2005

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InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces

Applied physics letters, 2013-09, Vol.103 (14)

2013

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Al sub(x)In sub(1-x)As sub(y)Sb sub(1-y) alloys lattice matched to InAs(1 0 0) grown by molecular beam epitaxy

Journal of crystal growth, 2015-09, Vol.425, p.33-38

2015

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Al In1−As Sb1− alloys lattice matched to InAs(1 0 0) grown by molecular beam epitaxy

Journal of crystal growth, 2015-09, Vol.425, p.33-38

2015

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Educational Level and Mortality in a 32-Year Follow-up Study of 18-Year-Old Men in the Netherlands

International journal of epidemiology, 1990-06, Vol.19 (2), p.374-379

1990

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AlxIn1−xAsySb1−y alloys lattice matched to InAs(100) grown by molecular beam epitaxy

Journal of crystal growth, 2015-09, Vol.425, p.33-38

2015

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Assessing health impact of environmental pollution sources using space-time models

Statistics in medicine, 2000-09, Vol.19 (17-18), p.2569-2578

2000

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Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations

IEEE transactions on electron devices, 2011-06, Vol.58 (6), p.1583-1593

2011

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InAs FinFETs With [Formula Omitted] nm Fabricated Using a To-Down Etch Process

IEEE electron device letters, 2016-03, Vol.37 (3), p.261

2016

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InAs FinFETs With \textrm }=20 nm Fabricated Using a Top-Down Etch Process

IEEE electron device letters, 2016-03, Vol.37 (3), p.261-264

2016

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Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III-V NMOS

Origin of high critical currents in YBa2Cu3O(7-delta) superconducting thin films

Origin of high critical currents in YBa2Cu3O7-δ superconducting thin films

Growth of heterostructures on InAs for high mobility device applications

InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

Detailed modeling of sub-100-nm MOSFETs based on schrödinger DD per subband and experiments and evaluation of the performance gap to ballistic transport

Scaling of characteristic frequencies in RF CMOS

Experimental Investigation of Optimum Gate Workfunction for CMOS Four-Terminal Multigate MOSFETs (MUGFETs)

Classification and benchmarking of III-V MOSFETs for CMOS

Genetic Susceptibility to Respiratory Syncytial Virus Bronchiolitis Is Predominantly Associated with Innate Immune Genes

Independent double-gate FinFETs with asymmetric gate stacks

Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs

Detailed modeling of sub-100-nm MOSFETs based on Schro/spl uml/dinger DD per subband and experiments and evaluation of the performance gap to ballistic transport

InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces

Al sub(x)In sub(1-x)As sub(y)Sb sub(1-y) alloys lattice matched to InAs(1 0 0) grown by molecular beam epitaxy

Al In1−As Sb1− alloys lattice matched to InAs(1 0 0) grown by molecular beam epitaxy

Educational Level and Mortality in a 32-Year Follow-up Study of 18-Year-Old Men in the Netherlands

AlxIn1−xAsySb1−y alloys lattice matched to InAs(100) grown by molecular beam epitaxy

Assessing health impact of environmental pollution sources using space-time models

Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations

InAs FinFETs With [Formula Omitted] nm Fabricated Using a To-Down Etch Process

InAs FinFETs With \textrm }=20 nm Fabricated Using a Top-Down Etch Process

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