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Fermi-level depinning at the metal-germanium interface by the formation of epitaxial nickel digermanide NiGe2 using pulsed laser anneal

Applied physics letters, 2012-10, Vol.101 (17)

2012

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Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment

Journal of applied physics, 2012-04, Vol.111 (7), p.073705-073705-5

2012

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The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2770-2777

2009

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Platinum Germanosilicide as Source/Drain Contacts in P-Channel Fin Field-Effect Transistors (FinFETs)

IEEE transactions on electron devices, 2009-07, Vol.56 (7), p.1458-1465

2009

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Pulsed Laser Annealing of Silicon-Carbon Source/Drain in MuGFETs for Enhanced Dopant Activation and High Substitutional Carbon Concentration

IEEE electron device letters, 2008-05, Vol.29 (5), p.464-467

2008

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Effect of Si content on laser welding performance of Al-Mn-Mg alloy

Transactions of Nonferrous Metals Society of China, 2014-07, Vol.24 (7), p.2208-2213

2014

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Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.3277

2008

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Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser anneal

Applied physics letters, 2010-11, Vol.97 (18)

2010

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B-doping of vapour–liquid–solid grown Au-catalysed and Al-catalysed Si nanowires: effects of B2H6 gas during Si nanowire growth and B-doping by a post-synthesis in situ plasma process

Nanotechnology, 2007-07, Vol.18 (27), p.275302-275302 (4)

2007

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Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon-Carbon Source/Drain

IEEE electron device letters, 2008-01, Vol.29 (1), p.89-92

2008

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N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide

IEEE electron device letters, 2007-02, Vol.28 (2), p.164-167

2007

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Demonstration of Schottky Barrier NMOS Transistors With Erbium Silicided Source/Drain and Silicon Nanowire Channel

IEEE electron device letters, 2008-10, Vol.29 (10), p.1167-1170

2008

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Novel Epitaxial Nickel Aluminide-Silicide with Low Schottky-Barrier and Series Resistance for Enhanced Performance of Dopant-Segregated Source/Drain N-channel MuGFETs

2007 IEEE Symposium on VLSI Technology, 2007, p.108-109

2007

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Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance

IEEE electron device letters, 2009-05, Vol.30 (5), p.472-474

2009

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P-Channel Tri-Gate FinFETs Featuring Ni1-yPtySiGe Source/Drain Contacts for Enhanced Drive Current Performance

IEEE electron device letters, 2008-05, Vol.29 (5), p.438-441

2008

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The stability of aluminium oxide monolayer and its interface with two-dimensional materials

Scientific reports, 2016-07, Vol.6 (1), p.29221, Article 29221

2016

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Nickel-Aluminum Alloy Silicides with High Aluminum Content for Contact Resistance Reduction and Integration in n-Channel Field-Effect Transistors

Journal of the Electrochemical Society, 2008, Vol.155 (3), p.H151

2008

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Achieving Conduction Band-Edge Schottky Barrier Height for Arsenic-Segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-Narrow Fin Widths

IEEE electron device letters, 2008-04, Vol.29 (4), p.382-385

2008

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Prospect of large scale 2D transition metal dichalcogenides nanophotonics for optical communications

2015 IEEE International Wireless Symposium (IWS 2015), 2015, p.1-4

2015

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Interfacial Interaction between HfO2 and MoS2: From Thin Films to Monolayer

Journal of physical chemistry. C, 2016-05, Vol.120 (18), p.9804-9810

2016

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P-Channel Tri-Gate FinFETs Featuring \hbox\hbox \hbox Source/Drain Contacts for Enhanced Drive Current Performance

IEEE electron device letters, 2008-05, Vol.29 (5), p.438-441

2008

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Plasma deposition of low dielectric constant (k=2.2∼2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films

Journal of applied physics, 2004-12, Vol.96 (11), p.6679-6684

2004

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Interfacial Interaction between HfO 2 and MoS 2 : From Thin Films to Monolayer

Journal of physical chemistry. C, 2016-05, Vol.120 (18), p.9804-9810

2016

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Tuning Contact Barrier Height between Metals and MoS2 Monolayer through Interface Engineering

Advanced materials interfaces, 2017-06, Vol.4 (12), p.n/a

2017

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Material and Electrical Characterization of Nickel Silicide-Carbon as Contact Metal to Silicon-Carbon Source and Drain Stressors

MRS proceedings, 2007, Vol.995, Article 0995-G05-07

2007

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Fermi-level depinning at the metal-germanium interface by the formation of epitaxial nickel digermanide NiGe2 using pulsed laser anneal

Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment

The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors

Platinum Germanosilicide as Source/Drain Contacts in P-Channel Fin Field-Effect Transistors (FinFETs)

Pulsed Laser Annealing of Silicon-Carbon Source/Drain in MuGFETs for Enhanced Dopant Activation and High Substitutional Carbon Concentration

Effect of Si content on laser welding performance of Al-Mn-Mg alloy

Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors

Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser anneal

B-doping of vapour–liquid–solid grown Au-catalysed and Al-catalysed Si nanowires: effects of B2H6 gas during Si nanowire growth and B-doping by a post-synthesis in situ plasma process

Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon-Carbon Source/Drain

N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide

Demonstration of Schottky Barrier NMOS Transistors With Erbium Silicided Source/Drain and Silicon Nanowire Channel

Novel Epitaxial Nickel Aluminide-Silicide with Low Schottky-Barrier and Series Resistance for Enhanced Performance of Dopant-Segregated Source/Drain N-channel MuGFETs

Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance

P-Channel Tri-Gate FinFETs Featuring Ni1-yPtySiGe Source/Drain Contacts for Enhanced Drive Current Performance

The stability of aluminium oxide monolayer and its interface with two-dimensional materials

Nickel-Aluminum Alloy Silicides with High Aluminum Content for Contact Resistance Reduction and Integration in n-Channel Field-Effect Transistors

Achieving Conduction Band-Edge Schottky Barrier Height for Arsenic-Segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-Narrow Fin Widths

Prospect of large scale 2D transition metal dichalcogenides nanophotonics for optical communications

Interfacial Interaction between HfO2 and MoS2: From Thin Films to Monolayer

P-Channel Tri-Gate FinFETs Featuring \hbox\hbox \hbox Source/Drain Contacts for Enhanced Drive Current Performance

Plasma deposition of low dielectric constant (k=2.2∼2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films

Interfacial Interaction between HfO 2 and MoS 2 : From Thin Films to Monolayer

Tuning Contact Barrier Height between Metals and MoS2 Monolayer through Interface Engineering

Material and Electrical Characterization of Nickel Silicide-Carbon as Contact Metal to Silicon-Carbon Source and Drain Stressors

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