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Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors

IEEE electron device letters, 2012-10, Vol.33 (10), p.1348-1350

2012

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Demonstration of Ge pMOSFETs with 6 Å EOT using TaN/ZrO2/Zr-cap/n-Ge(100) gate stack fabricated by novel vacuum annealing and in-situ metal capping method

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

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Underfill selection methodology for fine pitch Cu/low-k FCBGA packages

Microelectronics and reliability, 2009-02, Vol.49 (2), p.150-162

2009

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Design, assembly and reliability of large die and fine-pitch Cu/low- k flip chip package

Microelectronics and reliability, 2010-07, Vol.50 (7), p.986-994

2010

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INCREASED THERMAL STABILITY OF W/Ta2O5 GATE STRUCTURE USING EFFECTIVE DIFFUSION BARRIER OF DENUDED TUNGSTEN NITRIDE

Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 8, pp. 4854-4861. 2001, 2001, Vol.40 (8), p.4854-4861

2001

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Underfill Selection, Characterization, and Reliability Study for Fine-Pitch, Large Die Cu/Low-K Flip Chip Package

IEEE transactions on components, packaging, and manufacturing technology (2011), 2011-03, Vol.1 (3), p.279-290

2011

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Fabrication and electrical characteristics of self-aligned (SA) gate-all-around (GAA) si nanowire MOSFETs (SNWFET)

2010 IEEE International Conference on Integrated Circuit Design and Technology, 2010, p.63-66

2010

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IMPROVEMENT OF GATE OXIDE RELIABILITY FOR DIRECT TUNGSTEN-GATE USING DENUDATION OF WNx

Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 8A, pp. L796-L799. 2000, 2000-08, Vol.39 (8A), p.L796-L799

2000

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Growth behavior and thermal stability of epitaxial CoSi2 layer from cobalt–carbon films on (100) Si substrate

Journal of applied physics, 1999-09, Vol.86 (6), p.3452-3459

1999

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Formation of CoTi barrier and increased thermal stability of CoSi2 film in Ti capped Co/Si(100) system

Applied physics letters, 1998-10, Vol.73 (16), p.2302-2304

1998

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In situ barrier formation using rapid thermal annealing of a tungsten nitride/polycrystalline silicon structure

Applied physics letters, 2000-05, Vol.76 (18), p.2538-2540

2000

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Effect of Co incorporation on electrical characteristics of n super(+)/p shallow junction formed by dopant implantation into CoSi sub(2) and anneal

IEEE transactions on electron devices, 2000-01, Vol.47 (5), p.994-998

2000

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Formation of epitaxial CoSi2 spike in Co/Si3N4/Si(100) system and its crystallographic structure

Applied physics letters, 1998-10, Vol.73 (16), p.2284-2286

1998

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Improvement of Reverse Leakage Current by Fluorine Implantation in n + /p Shallow Junctions Diffused from a Cobalt Silicide Layer

Japanese Journal of Applied Physics, 2000, Vol.39 (2B), p.L156

2000

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Low-temperature crystallization of amorphous Si films by metal adsorption and diffusion

Japanese Journal of Applied Physics, 1996, Vol.35 (2B), p.1005-1009

1996

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Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics, 2000, Vol.39 (4S), p.2167-2171

2000

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Copper-Enhanced Solid Phase Crystallization of Amorphous Silicon Films

MRS proceedings, 1996, Vol.424, Article 225

1996

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Epidermal growth factor upregulates Skp2/Cks1 and p27kip1 in human extrahepatic cholangiocarcinoma cells

World journal of gastroenterology : WJG, 2014-01, Vol.20 (3), p.755-773

2014

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BEOL Advance Interconnect Technology Overview and Challenges

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2008, p.28-29

2008

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The effect of Co incorporation on electrical characteristics of n(+)/p shallow junction formed by dopant implantation into CoSi(2) and anneal

IEEE transactions on electron devices, 2000-05, Vol.47 (5), p.994-998

2000

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The effect of Co incorporation on electrical characteristics of n/sup +//p shallow junction formed by dopant implantation into CoSi/sub 2/ and anneal

IEEE transactions on electron devices, 2000-05, Vol.47 (5), p.994-998

2000

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The effect of Co incorporation on electrical characteristics of n +/p shallow junction formed by dopant implantation into CoSi 2 and anneal

IEEE transactions on electron devices, 2000-05, Vol.47 (5), p.994

2000

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Increased Thermal Stability of W/Ta 2 O 5 Gate Structure Using Effective Diffusion Barrier of Denuded Tungsten Nitride

Japanese Journal of Applied Physics, 2001-08, Vol.40 (8R), p.4854

2001

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Epitaxial Growth and Thermal Stability of CoSi 2 Layer on (100) Si from Co-C Films without Capping Layer

MRS proceedings, 1999, Vol.564, Article 145

1999

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High thermal stability and low junction leakage current of Ti capped Co salicide and its feasibility for high thermal budget CMOS devices

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998, p.1005-1008

1998

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Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors

Demonstration of Ge pMOSFETs with 6 Å EOT using TaN/ZrO2/Zr-cap/n-Ge(100) gate stack fabricated by novel vacuum annealing and in-situ metal capping method

Underfill selection methodology for fine pitch Cu/low-k FCBGA packages

Design, assembly and reliability of large die and fine-pitch Cu/low- k flip chip package

INCREASED THERMAL STABILITY OF W/Ta2O5 GATE STRUCTURE USING EFFECTIVE DIFFUSION BARRIER OF DENUDED TUNGSTEN NITRIDE

Underfill Selection, Characterization, and Reliability Study for Fine-Pitch, Large Die Cu/Low-K Flip Chip Package

Fabrication and electrical characteristics of self-aligned (SA) gate-all-around (GAA) si nanowire MOSFETs (SNWFET)

IMPROVEMENT OF GATE OXIDE RELIABILITY FOR DIRECT TUNGSTEN-GATE USING DENUDATION OF WNx

Growth behavior and thermal stability of epitaxial CoSi2 layer from cobalt–carbon films on (100) Si substrate

Formation of CoTi barrier and increased thermal stability of CoSi2 film in Ti capped Co/Si(100) system

In situ barrier formation using rapid thermal annealing of a tungsten nitride/polycrystalline silicon structure

Effect of Co incorporation on electrical characteristics of n super(+)/p shallow junction formed by dopant implantation into CoSi sub(2) and anneal

Formation of epitaxial CoSi2 spike in Co/Si3N4/Si(100) system and its crystallographic structure

Improvement of Reverse Leakage Current by Fluorine Implantation in n + /p Shallow Junctions Diffused from a Cobalt Silicide Layer

Low-temperature crystallization of amorphous Si films by metal adsorption and diffusion

Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices

Copper-Enhanced Solid Phase Crystallization of Amorphous Silicon Films

Epidermal growth factor upregulates Skp2/Cks1 and p27kip1 in human extrahepatic cholangiocarcinoma cells

BEOL Advance Interconnect Technology Overview and Challenges

The effect of Co incorporation on electrical characteristics of n(+)/p shallow junction formed by dopant implantation into CoSi(2) and anneal

The effect of Co incorporation on electrical characteristics of n/sup +//p shallow junction formed by dopant implantation into CoSi/sub 2/ and anneal

The effect of Co incorporation on electrical characteristics of n +/p shallow junction formed by dopant implantation into CoSi 2 and anneal

Increased Thermal Stability of W/Ta 2 O 5 Gate Structure Using Effective Diffusion Barrier of Denuded Tungsten Nitride

Epitaxial Growth and Thermal Stability of CoSi 2 Layer on (100) Si from Co-C Films without Capping Layer

High thermal stability and low junction leakage current of Ti capped Co salicide and its feasibility for high thermal budget CMOS devices

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