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Microwave Photonics Programs at DARPA

Journal of lightwave technology, 2014-10, Vol.32 (20), p.3428-3439

2014

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A Review of Electronic-Photonic Heterogeneous Integration at DARPA

IEEE journal of selected topics in quantum electronics, 2016-11, Vol.22 (6), p.482-490

2016

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Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES)

Semiconductor science and technology, 2007-02, Vol.22 (2), p.29-34

2007

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Fabrication of silicon on lattice-engineered substrate (SOLES) as a platform for monolithic integration of CMOS and optoelectronic devices

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-12, Vol.135 (3), p.235-237

2006

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The DARPA COSMOS program: The convergence of InP and Silicon CMOS technologies for high-performance mixed-signal

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-5

2010

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Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate

Journal of crystal growth, 2009-03, Vol.311 (7), p.1754-1757

2009

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Path to 3D heterogeneous integration

2015 International 3D Systems Integration Conference (3DIC), 2015, p.FS7.1-FS7.3

2015

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Microwave photonics: Recent programs at DARPA

2013 IEEE International Topical Meeting on Microwave Photonics (MWP), 2013, p.286-289

2013

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Materials and Integration Strategies for Modern RF Integrated Circuits

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2014, p.1-4

2014

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The DARPA COSMOS and ELASTx Programs: Towards Next Generation Linearized Microwave/Mm-Wave Transmitters

2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010, p.1-4

2010

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Epitaxial Growth of Heterovalent GaAs/Ge and Applications in III-V Monolithic Integration on Si Substrates

ECS transactions, 2006, Vol.3 (7), p.561-568

2006

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Substrate engineering for monolithic integration of III-V semiconductors with silicon CMOS technology

Dohrman, Carl Lawrence

2008

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Growth of GaAs on (100) Ge and Vicinal Ge Surface by Migration Enhanced Epitaxy

MRS proceedings, 2005, Vol.891, Article 0891-EE03-17

2005

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Mid-10 cm−2 threading dislocation density in optimized high-Ge content relaxed graded SiGe on Si for III-V solar on Si

MRS proceedings, 2004, Vol.836, Article L6.5

2004

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The DARPA Diverse Accessible Heterogeneous Integration (DAHI) program: Convergence of compound semiconductor devices and silicon-enabled architectures

2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2012, p.1-6

2012

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Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe∕Si

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-11, Vol.24 (6), p.2741-2747

2006

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Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded Si Ge ∕ Si a

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-11, Vol.24 (6), p.2741-2747

2006

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Fabrication of Silicon on Lattice-Engineered Substrate (SOLES) as a Platform for Monolithic Integration of CMOS and Optoelectronic Devices

2006 International SiGe Technology and Device Meeting, 2006, p.1-2

2006

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A Revolution on the Horizon from DARPA: Heterogeneous Integration for Revolutionary Microwave\/Millimeter-Wave Circuits at DARPA: Progress and Future Directions

IEEE microwave magazine, 2017-03, Vol.18 (2), p.44-59

2017

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Microwave Photonics Programs at DARPA

A Review of Electronic-Photonic Heterogeneous Integration at DARPA

Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES)

Fabrication of silicon on lattice-engineered substrate (SOLES) as a platform for monolithic integration of CMOS and optoelectronic devices

The DARPA COSMOS program: The convergence of InP and Silicon CMOS technologies for high-performance mixed-signal

Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate

Path to 3D heterogeneous integration

Microwave photonics: Recent programs at DARPA

Materials and Integration Strategies for Modern RF Integrated Circuits

The DARPA COSMOS and ELASTx Programs: Towards Next Generation Linearized Microwave/Mm-Wave Transmitters

Epitaxial Growth of Heterovalent GaAs/Ge and Applications in III-V Monolithic Integration on Si Substrates

Substrate engineering for monolithic integration of III-V semiconductors with silicon CMOS technology

Growth of GaAs on (100) Ge and Vicinal Ge Surface by Migration Enhanced Epitaxy

Mid-10 cm−2 threading dislocation density in optimized high-Ge content relaxed graded SiGe on Si for III-V solar on Si

The DARPA Diverse Accessible Heterogeneous Integration (DAHI) program: Convergence of compound semiconductor devices and silicon-enabled architectures

Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe∕Si

Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded Si Ge ∕ Si a

Fabrication of Silicon on Lattice-Engineered Substrate (SOLES) as a Platform for Monolithic Integration of CMOS and Optoelectronic Devices

A Revolution on the Horizon from DARPA: Heterogeneous Integration for Revolutionary Microwave\/Millimeter-Wave Circuits at DARPA: Progress and Future Directions

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