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Characterization of GaAs grown on SiGe/Si graded substrates using p - n junction diodes

Journal of applied physics, 2008-10, Vol.104 (7), p.073710-073710-6

2008

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Committee on Evaluation and Standards: REPORT OF THE CHAIRMAN, 1968

American journal of public health and the nation's health, 1969-02, Vol.59 (2), p.347-348

1969

Volltextzugriff (PDF)

Communicative understandings of women's leadership development: From ceilings of glass to labyrinth paths

2012

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The DARPA COSMOS and ELASTx Programs: Towards Next Generation Linearized Microwave/Mm-Wave Transmitters

2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010, p.1-4

2010

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The DARPA Diverse Accessible Heterogeneous Integration (DAHI) program: Convergence of compound semiconductor devices and silicon-enabled architectures

2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2012, p.1-6

2012

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Determination of bandgap states in p-type In 0.49 Ga 0.51 P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy

Journal of applied physics, 2011-03, Vol.109 (6), p.063709-063709-7

2011

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Determination of bandgap states in p-type In0.49Ga0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy

Journal of applied physics, 2011-03, Vol.109 (6)

2011

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Dislocation engineering in strained mos materials

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005, p.513-516

2005

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Electroluminescence and structural characteristics of InAs / In 0.1 Ga 0.9 As quantum dots grown on graded Si 1 − x Ge x / Si substrate

Applied physics letters, 2009-10, Vol.95 (14), p.141905-141905-3

2009

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Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1−xGex/Si substrate

Applied physics letters, 2009-10, Vol.95 (14)

2009

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Heterogeneous BiCMOS technologies and circuits and the DARPA Diverse Accessible Heterogeneous Integration (DAHI) program

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012, p.1-1

2012

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High gain Al Ga As ∕ Ga As heterojunction bipolar transistor fabricated on Si Ge ∕ Si substrate

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2007-05, Vol.25 (3), p.902-905

2007

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High gain AlGaAs∕GaAs heterojunction bipolar transistor fabricated on SiGe∕Si substrate

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2007-05, Vol.25 (3), p.902-905

2007

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InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer

Electronics letters, 2008-01, Vol.44 (3), p.243-244

2008

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InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer

Electronics letters, 2008-01, Vol.44 (3), p.1-1

2008

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Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si1−xGex/Si substrate

Applied physics letters, 2009-08, Vol.95 (5)

2009

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Origin and suppression of V-shaped defects in the cappingof self-assembled InAs quantum dots on graded Si 1 − x Ge x / Si substrate

Applied physics letters, 2009-08, Vol.95 (5), p.052111-052111-3

2009

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Risk factors and immunity in a nationally representative population following the 2009 influenza A(H1N1) pandemic

PloS one, 2010-10, Vol.5 (10), p.e13211

2010

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Study of surface microstructure origin and evolution for GaAs grown on Ge/Si 1− x Ge x /Si substrate

Journal of physics. D, Applied physics, 2009-02, Vol.42 (3), p.35303

2009

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Study of surface microstructure origin and evolution for GaAs grown on Ge/Si1−xGex/Si substrate

Journal of physics. D, Applied physics, 2009-02, Vol.42 (3), p.035303-035303 (4)

2009

Volltextzugriff (PDF)

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Characterization of GaAs grown on SiGe/Si graded substrates using p - n junction diodes

Committee on Evaluation and Standards: REPORT OF THE CHAIRMAN, 1968

Communicative understandings of women's leadership development: From ceilings of glass to labyrinth paths

The DARPA COSMOS and ELASTx Programs: Towards Next Generation Linearized Microwave/Mm-Wave Transmitters

The DARPA Diverse Accessible Heterogeneous Integration (DAHI) program: Convergence of compound semiconductor devices and silicon-enabled architectures

Determination of bandgap states in p-type In 0.49 Ga 0.51 P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy

Determination of bandgap states in p-type In0.49Ga0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy

Dislocation engineering in strained mos materials

Electroluminescence and structural characteristics of InAs / In 0.1 Ga 0.9 As quantum dots grown on graded Si 1 − x Ge x / Si substrate

Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1−xGex/Si substrate

Heterogeneous BiCMOS technologies and circuits and the DARPA Diverse Accessible Heterogeneous Integration (DAHI) program

High gain Al Ga As ∕ Ga As heterojunction bipolar transistor fabricated on Si Ge ∕ Si substrate

High gain AlGaAs∕GaAs heterojunction bipolar transistor fabricated on SiGe∕Si substrate

InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer

InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer

Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si1−xGex/Si substrate

Origin and suppression of V-shaped defects in the cappingof self-assembled InAs quantum dots on graded Si 1 − x Ge x / Si substrate

Risk factors and immunity in a nationally representative population following the 2009 influenza A(H1N1) pandemic

Study of surface microstructure origin and evolution for GaAs grown on Ge/Si 1− x Ge x /Si substrate

Study of surface microstructure origin and evolution for GaAs grown on Ge/Si1−xGex/Si substrate

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