UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

TLS-Dicing for SiC - Latest Assessment Results

Materials science forum, 2018-06, Vol.924, p.547-551

2018

Volltextzugriff (PDF)

Bipolar Degradation of 6.5 kV SiC pn-Diodes: Result Prediction by Photoluminescence

Materials Science Forum, 2016-05, Vol.858, p.410-413

2016

Volltextzugriff (PDF)

Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance

Materials science forum, 2010-04, Vol.645-648, p.909-912

2010

Volltextzugriff (PDF)

History and Recent Developments of Packaging Technology for SiC Power Devices

Materials Science Forum, 2016-05, Vol.858, p.1043-1048

2016

Volltextzugriff (PDF)

Application-Oriented Unipolar Switching SiC Devices

Materials science forum, 2002-04, Vol.389-393, p.1185-1190

2002

Volltextzugriff (PDF)

Comparison of Different Novel Chip Separation Methods for 4H-SiC

Materials science forum, 2015-06, Vol.821-823, p.520-523, Article 520

2015

Volltextzugriff (PDF)

Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories

Materials science forum, 2000-05, Vol.338-342, p.1243-1246

2000

Volltextzugriff (PDF)

Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices

Materials science forum, 2015-06, Vol.821-823, p.528-532, Article 528

2015

Volltextzugriff (PDF)

Characterization of Packaged 6.5 kV SiC PiN-Diodes up to 300 °C

Materials science forum, 2012-05, Vol.717-720, p.957-960

2012

Volltextzugriff (PDF)

High quality and high speed cutting of 4H-SiC JFET wafers including PCM structures by using Thermal Laser Separation

MRS proceedings, 2014, Vol.1693 (1), p.55-60, Article mrss14-1693-dd04-03

2014

Volltextzugriff (PDF)

A Molded Package Optimized for High Voltage SiC-Devices

Materials science forum, 2011, Vol.679-680, p.762-765

2011

Volltextzugriff (PDF)

BIFET – a Novel Bipolar SiC Switch for High Voltage Power Electronics

Materials science forum, 2004-01, Vol.457-460, p.1245-1248

2004

Volltextzugriff (PDF)

Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV

Materials Science Forum, 2005-05, Vol.483-485, p.977-980

2005

Volltextzugriff (PDF)

1700 V SiC Schottky Diodes Scaled to 25 A

Materials science forum, 2001-01, Vol.353-356, p.675-678

2001

Volltextzugriff (PDF)

To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes

Materials science forum, 2003-09, Vol.433-436, p.895-900

2003

Volltextzugriff (PDF)

High-Voltage Modular Switch Based on SiC VJFETs - First Results for a Fast 4.5kV/1.2Ω Configuration

Materials science forum, 2003-09, Vol.433-436, p.793-796

2003

Volltextzugriff (PDF)

Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC

Materials science forum, 2001-01, Vol.353-356, p.695-698

2001

Volltextzugriff (PDF)

SiC power devices with low on-resistance for fast switching applications

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2000, p.213-216

2000

Volltextzugriff (PDF)

Bipolar 6.5 kV-SiC-diodes: on the road to industrial application

2005 European Conference on Power Electronics and Applications, 2005, p.7 pp.-P.7

2005

Volltextzugriff (PDF)

1 – 19 von 19

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(16)
Mit Volltextzugriff
(18)

Publikationsform

Artikel
(16)
Tagungsberichte
(3)

Sprache

Englisch
(19)
Japanisch
(4)

Erscheinungsjahr

n.n

Thema

Materials Science
(9)
Science & Technology
(8)
Technology
(8)
Materials Science, Multidisciplinary
(6)
Silicon Carbide
(6)
Devices
(4)
High Voltage
(3)
Lasers
(3)
Power Cycling
(3)
Thermal Laser Separation
(3)
Annealing
(2)
Dicing Techniques
(2)
Engineering
(2)
Jfets
(2)
Kerf Less
(2)
Laser
(2)
Materials Science, Characterization & Testing
(2)
Mosfets
(2)
Physical Sciences
(2)
Physics
(2)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

IEEE Electronic Library (IEL)
(2)
Springer Journals
(1)

Zeitschrift / Serie

Menü

Weitere Dienste

Einstellungen

TLS-Dicing for SiC - Latest Assessment Results

Bipolar Degradation of 6.5 kV SiC pn-Diodes: Result Prediction by Photoluminescence

Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance

History and Recent Developments of Packaging Technology for SiC Power Devices

Application-Oriented Unipolar Switching SiC Devices

Comparison of Different Novel Chip Separation Methods for 4H-SiC

Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories

Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices

Characterization of Packaged 6.5 kV SiC PiN-Diodes up to 300 °C

High quality and high speed cutting of 4H-SiC JFET wafers including PCM structures by using Thermal Laser Separation

A Molded Package Optimized for High Voltage SiC-Devices

BIFET – a Novel Bipolar SiC Switch for High Voltage Power Electronics

Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV

1700 V SiC Schottky Diodes Scaled to 25 A

To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes

High-Voltage Modular Switch Based on SiC VJFETs - First Results for a Fast 4.5kV/1.2Ω Configuration

Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC

SiC power devices with low on-resistance for fast switching applications

Bipolar 6.5 kV-SiC-diodes: on the road to industrial application

Suchergebnisse filtern