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Basic mechanisms and modeling of single-event upset in digital microelectronics

IEEE transactions on nuclear science, 2003-06, Vol.50 (3), p.583-602

2003

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Radiation Effects in MOS Oxides

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.1833-1853

2008

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Production and propagation of single-event transients in high-speed digital logic ICs

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3278-3284

2004

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Radiation effects in SOI technologies

IEEE transactions on nuclear science, 2003-06, Vol.50 (3), p.522-538

2003

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Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3394-3400

2008

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New Insights Into Single Event Transient Propagation in Chains of Inverters-Evidence for Propagation-Induced Pulse Broadening

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2338-2346

2007

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Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2842-2853

2008

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Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2303-2311

2007

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Effects of particle energy on proton-induced single-event latchup

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2622-2629

2005

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Heavy ion-induced digital single-event transients in deep submicron Processes

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3480-3485

2004

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Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2943-2947

2008

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Impact of Ion Energy and Species on Single Event Effects Analysis

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2312-2321

2007

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Enhanced Degradation in Power MOSFET Devices Due to Heavy Ion Irradiation

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2181-2189

2007

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Effects of Total Dose Irradiation on Single-Event Upset Hardness

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.1772-1778

2006

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Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2419-2425

2007

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Total Ionizing Dose and Single Event Effects Hardness Assurance Qualification Issues for Microelectronics

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.1926-1946

2008

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SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.1893-1903

2001

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Enhanced Proton and Neutron Induced Degradation and Its Impact on Hardness Assurance Testing

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3096-3105

2008

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Heavy Ion Energy Effects in CMOS SRAMs

IEEE transactions on nuclear science, 2007-08, Vol.54 (4), p.889-893

2007

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Radiation-induced off-state leakage current in commercial power MOSFETs

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2378-2386

2005

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A New Technique for SET Pulse Width Measurement in Chains of Inverters Using Pulsed Laser Irradiation

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2014-2020

2009

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Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2171-2178

2009

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Monte Carlo exploration of neutron-induced SEU-sensitive volumes in SRAMs

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.3075-3081

2002

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Charge collection in SOI capacitors and circuits and its effect on SEU hardness

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2937-2947

2002

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Test Procedures for Proton-Induced Single Event Latchup in Space Environments

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2161-2165

2008

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Basic mechanisms and modeling of single-event upset in digital microelectronics

Radiation Effects in MOS Oxides

Production and propagation of single-event transients in high-speed digital logic ICs

Radiation effects in SOI technologies

Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

New Insights Into Single Event Transient Propagation in Chains of Inverters-Evidence for Propagation-Induced Pulse Broadening

Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

Effects of particle energy on proton-induced single-event latchup

Heavy ion-induced digital single-event transients in deep submicron Processes

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

Impact of Ion Energy and Species on Single Event Effects Analysis

Enhanced Degradation in Power MOSFET Devices Due to Heavy Ion Irradiation

Effects of Total Dose Irradiation on Single-Event Upset Hardness

Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch

Total Ionizing Dose and Single Event Effects Hardness Assurance Qualification Issues for Microelectronics

SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

Enhanced Proton and Neutron Induced Degradation and Its Impact on Hardness Assurance Testing

Heavy Ion Energy Effects in CMOS SRAMs

Radiation-induced off-state leakage current in commercial power MOSFETs

A New Technique for SET Pulse Width Measurement in Chains of Inverters Using Pulsed Laser Irradiation

Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments

Monte Carlo exploration of neutron-induced SEU-sensitive volumes in SRAMs

Charge collection in SOI capacitors and circuits and its effect on SEU hardness

Test Procedures for Proton-Induced Single Event Latchup in Space Environments

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