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Ultra-high hole mobility exceeding one million in a strained germanium quantum well

Applied physics letters, 2012-10, Vol.101 (17)

2012

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Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates

Journal of applied physics, 2010-03, Vol.107 (6), p.064304-064304-11

2010

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Fractional Quantum Hall States in a Ge Quantum Well

Physical review letters, 2016-04, Vol.116 (17), p.176802-176802, Article 176802

2016

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Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001)

Thin solid films, 2011-09, Vol.519 (22), p.7911-7917

2011

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High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate

Solid-state electronics, 2011-08, Vol.62 (1), p.189-194

2011

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DeepCare: A Deep Dynamic Memory Model for Predictive Medicine

Advances in Knowledge Discovery and Data Mining, p.30-41

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Comprehensive RNA Analysis of the NF1 Gene in Classically Affected NF1 Affected Individuals Meeting NIH Criteria has High Sensitivity and Mutation Negative Testing is Reassuring in Isolated Cases With Pigmentary Features Only

EBioMedicine, 2016-05, Vol.7 (C), p.212-220

2016

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High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

Journal of applied physics, 2013-10, Vol.114 (15)

2013

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Reverse graded relaxed buffers for high Ge content SiGe virtual substrates

Applied physics letters, 2008-11, Vol.93 (19), p.192103-192103-3

2008

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Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

Journal of applied physics, 2014-01, Vol.115 (1)

2014

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Ultra high hole mobilities in a pure strained Ge quantum well

Thin solid films, 2014-04, Vol.557, p.329-333

2014

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Deep Feature Extraction from Trajectories for Transportation Mode Estimation

Advances in Knowledge Discovery and Data Mining, p.54-66

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An origin behind Rashba spin splitting within inverted doped sGe heterostructures

Applied physics letters, 2017-01, Vol.110 (4)

2017

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Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well

Applied physics letters, 2014-03, Vol.104 (13)

2014

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Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates

Thin solid films, 2012-02, Vol.520 (8), p.3222-3226

2012

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Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration

Thin solid films, 2012-02, Vol.520 (8), p.3227-3231

2012

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Towards Automatic Generation of Metafeatures

Advances in Knowledge Discovery and Data Mining, p.215-226

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High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

Journal of applied physics, 2011-06, Vol.109 (12), p.123714-123714-12

2011

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Grade Prediction with Course and Student Specific Models

Advances in Knowledge Discovery and Data Mining, p.89-101

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Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD

Journal of crystal growth, 2011-03, Vol.318 (1), p.337-340

2011

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Protection against SARS-CoV-2 after Covid-19 Vaccination and Previous Infection

The New England journal of medicine, 2022-03, Vol.386 (13), p.1207-1220

2022

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TrafficWatch: Real-Time Traffic Incident Detection and Monitoring Using Social Media

Advances in Knowledge Discovery and Data Mining, p.540-551

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Calibration of thickness-dependent k -factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy

Journal of physics. Conference series, 2013-01, Vol.471 (1), p.12031-6

2013

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Database Systems for Advanced Applications: 28th International Conference, DASFAA 2023, Tianjin, China, April 17-20, 2023, Proceedings, Part III

1, 2023

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High-quality Ge/Si0.4Ge0.6 multiple quantum wells for photonic applications: growth by reduced pressure chemical vapour deposition and structural characteristics

Journal of physics. D, Applied physics, 2011-02, Vol.44 (5), p.055102-055102

2011

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Ultra-high hole mobility exceeding one million in a strained germanium quantum well

Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates

Fractional Quantum Hall States in a Ge Quantum Well

Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001)

High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate

DeepCare: A Deep Dynamic Memory Model for Predictive Medicine

Comprehensive RNA Analysis of the NF1 Gene in Classically Affected NF1 Affected Individuals Meeting NIH Criteria has High Sensitivity and Mutation Negative Testing is Reassuring in Isolated Cases With Pigmentary Features Only

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

Reverse graded relaxed buffers for high Ge content SiGe virtual substrates

Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

Ultra high hole mobilities in a pure strained Ge quantum well

Deep Feature Extraction from Trajectories for Transportation Mode Estimation

An origin behind Rashba spin splitting within inverted doped sGe heterostructures

Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well

Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates

Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration

Towards Automatic Generation of Metafeatures

High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

Grade Prediction with Course and Student Specific Models

Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD

Protection against SARS-CoV-2 after Covid-19 Vaccination and Previous Infection

TrafficWatch: Real-Time Traffic Incident Detection and Monitoring Using Social Media

Calibration of thickness-dependent k -factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy

Database Systems for Advanced Applications: 28th International Conference, DASFAA 2023, Tianjin, China, April 17-20, 2023, Proceedings, Part III

High-quality Ge/Si0.4Ge0.6 multiple quantum wells for photonic applications: growth by reduced pressure chemical vapour deposition and structural characteristics

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