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Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

Journal of applied physics, 2004-11, Vol.96 (9), p.4689-4728

2004

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Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

Physical review. B, Condensed matter and materials physics, 2004-12, Vol.70 (23), Article 235213

2004

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Electronic properties of vacancy–oxygen complex in Ge crystals

Applied physics letters, 2002-09, Vol.81 (10), p.1821-1823

2002

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The antimony-vacancy defect in p -type germanium

Applied physics letters, 2005-10, Vol.87 (17), p.172103-172103-3

2005

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Donor level of interstitial hydrogen in semiconductors: Deep level transient spectroscopy

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.5080-5084

2009

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Laplace transform deep-level transient spectroscopic studies of defects in semiconductors

Journal of applied physics, 1994-07, Vol.76 (1), p.194-198

1994

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Interstitial-related defect reactions in electron-irradiated oxygen-rich Ge crystals: A DLTS study

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4533-4536

2009

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E center in silicon has a donor level in the band gap

Physical review letters, 2006-09, Vol.97 (10), p.106402-106402, Article 106402

2006

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Neutron-irradiation-induced defects in germanium: A Laplace deep level transient spectroscopy study

Vacuum, 2009-08, Vol.84 (1), p.32-36

2009

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Tilt and dislocations in epitaxial laterally overgrown GaAs layers

Journal of applied physics, 2007-01, Vol.101 (1), p.013508-013508-5

2007

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Trivacancy in silicon: A combined DLTS and ab-initio modeling study

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4565-4567

2009

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Structure and properties of vacancy-oxygen complexes in Si1-xGex alloys

Physical review. B, Condensed matter and materials physics, 2004-03, Vol.69 (12), p.125218

2004

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Energy state distributions at oxide–semiconductor interfaces investigated by Laplace DLTS

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4604-4607

2009

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Capacitance spectroscopy of CdTe self-assembled quantum dots embedded in ZnTe matrix

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.5173-5176

2009

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Relation between photocurrent and DLTS signals observed for quantum dot systems

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.5170-5172

2009

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Electron- and hole-related electrical activity of InAs/GaAs quantum dots

Physica. B, Condensed matter, 2007-12, Vol.401, p.580-583

2007

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Electrically active hydrogen-implantation-induced defects in Ge crystals and SiGe alloys

Thin solid films, 2008-11, Vol.517 (1), p.419-421

2008

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The vacancy–donor pair in unstrained silicon, germanium and SiGe alloys

Journal of physics. Condensed matter, 2005-06, Vol.17 (22), p.S2293-S2302

2005

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Point defects in SiGe alloys: structural guessing based on electronic transition analysis

Journal of materials science. Materials in electronics, 2008-12, Vol.19 (Suppl 1), p.115-121

2008

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Donor level of interstitial hydrogen in GaAs

Physica. B, Condensed matter, 2006-04, Vol.376, p.614-617

2006

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Saddle point for oxygen reorientation in the vicinity of a silicon vacancy

Physical review. B, Condensed matter, 2003-05, Vol.67 (19), Article 195204

2003

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Deep levels of vacancy-hydrogen centers in silicon studied by Laplace DLTS

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.167-170

1999

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Stable and metastable configurations of iron atoms in SiGe alloys

Journal of physics. Condensed matter, 2005-06, Vol.17 (22), p.S2267-S2272

2005

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Electrically active defects induced by irradiations with electrons, neutrons and ions in Ge-rich SiGe alloys

Physica. B, Condensed matter, 2007-12, Vol.401, p.184-187

2007

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Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling

Physical review. B, Condensed matter and materials physics, 2009-12, Vol.80 (23), Article 235207

2009

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Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

Electronic properties of vacancy–oxygen complex in Ge crystals

The antimony-vacancy defect in p -type germanium

Donor level of interstitial hydrogen in semiconductors: Deep level transient spectroscopy

Laplace transform deep-level transient spectroscopic studies of defects in semiconductors

Interstitial-related defect reactions in electron-irradiated oxygen-rich Ge crystals: A DLTS study

E center in silicon has a donor level in the band gap

Neutron-irradiation-induced defects in germanium: A Laplace deep level transient spectroscopy study

Tilt and dislocations in epitaxial laterally overgrown GaAs layers

Trivacancy in silicon: A combined DLTS and ab-initio modeling study

Structure and properties of vacancy-oxygen complexes in Si1-xGex alloys

Energy state distributions at oxide–semiconductor interfaces investigated by Laplace DLTS

Capacitance spectroscopy of CdTe self-assembled quantum dots embedded in ZnTe matrix

Relation between photocurrent and DLTS signals observed for quantum dot systems

Electron- and hole-related electrical activity of InAs/GaAs quantum dots

Electrically active hydrogen-implantation-induced defects in Ge crystals and SiGe alloys

The vacancy–donor pair in unstrained silicon, germanium and SiGe alloys

Point defects in SiGe alloys: structural guessing based on electronic transition analysis

Donor level of interstitial hydrogen in GaAs

Saddle point for oxygen reorientation in the vicinity of a silicon vacancy

Deep levels of vacancy-hydrogen centers in silicon studied by Laplace DLTS

Stable and metastable configurations of iron atoms in SiGe alloys

Electrically active defects induced by irradiations with electrons, neutrons and ions in Ge-rich SiGe alloys

Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling

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