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Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Scientific reports, 2014-03, Vol.4 (1), p.4371-4371, Article 4371

2014

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Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer

Physica Status Solidi. B: Basic Solid State Physics, 2013-04, Vol.250 (4), p.746-749

2013

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Advantage of In- over N-polarity for disclosure of p-type conduction in InN:Mg

Journal of applied physics, 2014-05, Vol.115 (17)

2014

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High pressure studies of radiative recombination mechanisms in InN

Physica Status Solidi (b), 2007-01, Vol.244 (1), p.38-41

2007

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Resonant localized donor state above the conduction band minimum in InN

Applied physics letters, 2005-06, Vol.86 (26), p.262105-262105-3

2005

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Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities

Journal of applied physics, 2012-05, Vol.111 (9), p.093719-093719-5

2012

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Role of localized donor states in transport and photoluminescence of InN revealed by hydrostatic pressure studies

Physica Status Solidi (b), 2007-06, Vol.244 (6), p.1825-1828

2007

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Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates

Journal of applied physics, 2010-07, Vol.108 (2), p.023516-023516-6

2010

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Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior

Journal of applied physics, 2009-06, Vol.105 (12), p.123713-123713-5

2009

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Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

Applied physics letters, 2008-10, Vol.93 (17), p.172117-172117-3

2008

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Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments

Physica Status Solidi (b), 2006-06, Vol.243 (7), p.1537-1540

2006

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Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures

Physica status solidi. A, Applied research, 2004-01, Vol.201 (2), p.190-194

2004

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The variation of the pressure coefficient of manganin sensors at low temperatures

Measurement science & technology, 1999-05, Vol.10 (5), p.343-347

1999

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Direct proof of two-electron occupation of Ge-DX centers in GaAs codoped with Ge and Te

Physical review letters, 1993-11, Vol.71 (21), p.3529-3532

1993

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Band-to-band character of photoluminescence from InN and In-rich InGaN revealed by hydrostatic pressure studies

Applied physics letters, 2006-09, Vol.89 (12), p.121915-121915-3

2006

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Elimination of DX centerlike behavior of donors in heavily doped GaAs

Journal of applied physics, 1991-03, Vol.69 (5), p.3087-3093

1991

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Direct evidence of the two-electron character of DX centers based on co-doping with shallow donors and application of high pressure

The Journal of physics and chemistry of solids, 1995, Vol.56 (3), p.589-593

1995

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Hydrostatic pressure dependence of polarization-induced interface charge in AlGaN∕GaN heterostructures determined by means of capacitance-voltage characterization

Journal of applied physics, 2006-12, Vol.100 (11)

2006

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Hydrostatic pressure dependence of polarization-induced interface charge in Al Ga N ∕ Ga N heterostructures determined by means of capacitance-voltage characterization

Journal of applied physics, 2006-12, Vol.100 (11), p.113712-113712-6

2006

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Study of Transport, Phase, and Spin Relaxation Times of 2D Electrons by Means of Pressure

physica status solidi (b), 1996-11, Vol.198 (1), p.267-281

1996

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Study of Quantum and Classical Scattering Times in Pseudomorphic AlGaAs/InGaAs/GaAs by Means of Pressure

physica status solidi (b), 1996-11, Vol.198 (1), p.283-288

1996

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Far-Infrared Narrow-Band Photodetector Based on Magnetically Tunable Cyclotron Resonance-Assisted Transitions in Pure n-Type InSb

Acta physica Polonica, A, 1997-10, Vol.92 (4), p.733-736

1997

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Spatial Correlation of Occupied DX Centres in GaAs and its Destruction by Thermal and Optical Excitation

Japanese Journal of Applied Physics, 1993-01, Vol.32 (S1), p.221

1993

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Correlations of the remote impurity charges—A method of 2DEG mobility tuning in GaAs/AlGaAs heterostructures

Solid-state electronics, 1994-04, Vol.37 (4), p.677-680

1994

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Manganin sensors as low temperature pressure gauges

High pressure research, 2000-09, Vol.19 (1-6), p.353-357

2000

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Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer

Advantage of In- over N-polarity for disclosure of p-type conduction in InN:Mg

High pressure studies of radiative recombination mechanisms in InN

Resonant localized donor state above the conduction band minimum in InN

Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities

Role of localized donor states in transport and photoluminescence of InN revealed by hydrostatic pressure studies

Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates

Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior

Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments

Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures

The variation of the pressure coefficient of manganin sensors at low temperatures

Direct proof of two-electron occupation of Ge-DX centers in GaAs codoped with Ge and Te

Band-to-band character of photoluminescence from InN and In-rich InGaN revealed by hydrostatic pressure studies

Elimination of DX centerlike behavior of donors in heavily doped GaAs

Direct evidence of the two-electron character of DX centers based on co-doping with shallow donors and application of high pressure

Hydrostatic pressure dependence of polarization-induced interface charge in AlGaN∕GaN heterostructures determined by means of capacitance-voltage characterization

Hydrostatic pressure dependence of polarization-induced interface charge in Al Ga N ∕ Ga N heterostructures determined by means of capacitance-voltage characterization

Study of Transport, Phase, and Spin Relaxation Times of 2D Electrons by Means of Pressure

Study of Quantum and Classical Scattering Times in Pseudomorphic AlGaAs/InGaAs/GaAs by Means of Pressure

Far-Infrared Narrow-Band Photodetector Based on Magnetically Tunable Cyclotron Resonance-Assisted Transitions in Pure n-Type InSb

Spatial Correlation of Occupied DX Centres in GaAs and its Destruction by Thermal and Optical Excitation

Correlations of the remote impurity charges—A method of 2DEG mobility tuning in GaAs/AlGaAs heterostructures

Manganin sensors as low temperature pressure gauges

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