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Application of Charge Pumping Technique for MOSFET Devices Reliability

2023 IEEE 33rd International Conference on Microelectronics (MIEL), 2023, p.1-8

Djezzar, B.

2023

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Impact of Fin Height on Bias Temperature Instability of Memory Periphery FinFETs

2019 IEEE International Integrated Reliability Workshop (IIRW), 2019, p.1-5

2019

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A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part I (high frequencies)

IEEE transactions on nuclear science, 2004-08, Vol.51 (4), p.1724-1731

2004

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A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part II (low frequencies)

IEEE transactions on nuclear science, 2004-08, Vol.51 (4), p.1732-1736

2004

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Hot Carrier Degradation in Triple-RESURF LDMOS with Trenched-Gate

2021 IEEE 32nd International Conference on Microelectronics (MIEL), 2021, p.141-144

2021

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Channel-length impact on radiation-induced threshold-voltage shift in N-MOSFET's devices at low gamma rays radiation doses

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.1872-1878

2000

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On the turn-around phenomenon in n-MOS transistors under NBTI conditions

Solid-state electronics, 2016-07, Vol.121, p.34-40

2016

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Field Acceleration Model for TDDB: Still a Valid Tool to Study the Reliability of Thick SiO@@d2@-Based Dielectric Layers?

IEEE transactions on electron devices, 2007-07, Vol.54 (7), p.1713-1717

2007

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Field Acceleration Model for TDDB: Still a Valid Tool to Study the Reliability of Thick \hbox-Based Dielectric Layers?

IEEE transactions on electron devices, 2007-07, Vol.54 (7), p.1713-1717

2007

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Field Acceleration Model for TDDB: Still a Valid Tool to Study the Reliability of Thick SiO sub(2)-Based Dielectric Layers?

IEEE transactions on electron devices, 2007-01, Vol.54 (7)

2007

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Field Acceleration Model for TDDB: Still a Valid Tool to Study the Reliability of Thick SiO2-Based Dielectric Layers?

IEEE transactions on electron devices, 2007-07, Vol.54 (7), p.1713

2007

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On the correlation between radiation-induced oxide- and border-trap effects in the gate-oxide nMOSFET’s

Microelectronics and reliability, 2002-12, Vol.42 (12), p.1865-1874

Djezzar, Boualem

2002

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Channel-length impact on radiation-induced threshold-voltage shift in N-MOSFET devices at low gamma ray radiation doses

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.1872-1878

2000

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Field acceleration model for TDDB : Still a valid tool to study the reliability of thick SiO2-based dielectric layers?

IEEE transactions on electron devices, 2007, Vol.54 (7), p.1713-1717

2007

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Electrical characterization of oxide and Si/SiO(2) interface of irradiated NMOS transistors at low radiation doses

IEEE transactions on nuclear science, 1999-08, Vol.46 (4), p.829-833

1999

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Does PMOS Vth shift wholly capture the degradation of CMOS inverter circuit under DC NBTI?

2012 IEEE International Integrated Reliability Workshop Final Report, 2012, p.191-194

2012

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On-the-fly extraction method for interface-, oxide- trap and mobility degradation induced by NBTI stress

2012 IEEE International Integrated Reliability Workshop Final Report, 2012, p.113-116

2012

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A comparative study of different contact resistance test structures dedicated to the power process technology

Solid-state electronics, 2005-10, Vol.49 (10), p.1617-1622

2005

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Two-point capacitance-voltage (TPCV) concept: A new method for NBTI characterization

2012 IEEE International Integrated Reliability Workshop Final Report, 2012, p.175-178

2012

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Why is oxide-trap charge-pumping (OTCP) method appropriate for extracting the radiation-induced traps in mosfet?

2009 IEEE International Reliability Physics Symposium, 2009, p.779-784

2009

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New oxide-trap extraction method for irradiated MOSFET devices at high frequencies

Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442), 2003, p.383-386

2003

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Extended Oxide-Trap extraction method to low frequencies for irradiated MOS transistors

Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442), 2003, p.387-390

2003

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An advanced PNP bipolar transistor design for a low-power and very-high-performance quarter-micron CBiCMOS process

Microelectronics, 1998-12, Vol.29 (12), p.961-965

1998

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Electrical characterization of oxide and Si/SiO/sub 2/ interface of irradiated NMOS transistors at low radiation doses

IEEE transactions on nuclear science, 1999-08, Vol.46 (4), p.829-833

1999

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Fast and simple method for estimation and separation of radiation-induced traps in MOSFETs devices

2011 IEEE International Conference on Quality and Reliability, 2011, p.469-472

2011

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Application of Charge Pumping Technique for MOSFET Devices Reliability

Impact of Fin Height on Bias Temperature Instability of Memory Periphery FinFETs

A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part I (high frequencies)

A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part II (low frequencies)

Hot Carrier Degradation in Triple-RESURF LDMOS with Trenched-Gate

Channel-length impact on radiation-induced threshold-voltage shift in N-MOSFET's devices at low gamma rays radiation doses

On the turn-around phenomenon in n-MOS transistors under NBTI conditions

Field Acceleration Model for TDDB: Still a Valid Tool to Study the Reliability of Thick SiO@@d2@-Based Dielectric Layers?

Field Acceleration Model for TDDB: Still a Valid Tool to Study the Reliability of Thick \hbox-Based Dielectric Layers?

Field Acceleration Model for TDDB: Still a Valid Tool to Study the Reliability of Thick SiO sub(2)-Based Dielectric Layers?

Field Acceleration Model for TDDB: Still a Valid Tool to Study the Reliability of Thick SiO2-Based Dielectric Layers?

On the correlation between radiation-induced oxide- and border-trap effects in the gate-oxide nMOSFET’s

Channel-length impact on radiation-induced threshold-voltage shift in N-MOSFET devices at low gamma ray radiation doses

Field acceleration model for TDDB : Still a valid tool to study the reliability of thick SiO2-based dielectric layers?

Electrical characterization of oxide and Si/SiO(2) interface of irradiated NMOS transistors at low radiation doses

Does PMOS Vth shift wholly capture the degradation of CMOS inverter circuit under DC NBTI?

On-the-fly extraction method for interface-, oxide- trap and mobility degradation induced by NBTI stress

A comparative study of different contact resistance test structures dedicated to the power process technology

Two-point capacitance-voltage (TPCV) concept: A new method for NBTI characterization

Why is oxide-trap charge-pumping (OTCP) method appropriate for extracting the radiation-induced traps in mosfet?

New oxide-trap extraction method for irradiated MOSFET devices at high frequencies

Extended Oxide-Trap extraction method to low frequencies for irradiated MOS transistors

An advanced PNP bipolar transistor design for a low-power and very-high-performance quarter-micron CBiCMOS process

Electrical characterization of oxide and Si/SiO/sub 2/ interface of irradiated NMOS transistors at low radiation doses

Fast and simple method for estimation and separation of radiation-induced traps in MOSFETs devices

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