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Thin film solar cells based on the ternary compound Cu2SnS3

Thin solid films, 2012-07, Vol.520 (19), p.6291-6294

2012

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Raman analysis of monoclinic Cu2SnS3 thin films

Applied physics letters, 2012-05, Vol.100 (19)

2012

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Discrimination and detection limits of secondary phases in Cu2ZnSnS4 using X-ray diffraction and Raman spectroscopy

Thin solid films, 2014-10, Vol.569, p.113-123

2014

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Direct Synthesis of Single-Phase p‑Type SnS by Electrodeposition from a Dicyanamide Ionic Liquid at High Temperature for Thin Film Solar Cells

Journal of physical chemistry. C, 2013-03, Vol.117 (9), p.4383-4393

2013

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Multiple phases of Cu2ZnSnSe4 detected by room temperature photoluminescence

Journal of applied physics, 2014-08, Vol.116 (7)

2014

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Erratum: “Multiple phases of Cu2ZnSnSe4 detected by room temperature photoluminescence” [J. Appl. Phys. 116 , 073509 (2014)]

Journal of applied physics, 2015-08, Vol.118 (8)

2015

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Cu-Rich Precursors Improve Kesterite Solar Cells

Advanced energy materials, 2014-01, Vol.4 (2), p.np-n/a

2014

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Electrochemical deposition as a unique solution processing method for insoluble organic optoelectronic materials

Journal of materials chemistry. C, Materials for optical and electronic devices, 2014-09, Vol.2 (35), p.7232-7238

2014

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Graphene on Ir(111): physisorption with chemical modulation

Physical review letters, 2011-07, Vol.107 (3), p.036101-036101, Article 036101

2011

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HCl and Br2-MeOH etching of Cu2ZnSnSe4 polycrystalline absorbers

Thin solid films, 2013-05, Vol.535, p.83-87

2013

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Cu2ZnSnSe4 thin film solar cells produced via co-evaporation and annealing including a SnSe2 capping layer

Progress in photovoltaics, 2014-01, Vol.22 (1), p.51-57

2014

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Detecting ZnSe secondary phase in Cu2ZnSnSe4 by room temperature photoluminescence

Applied physics letters, 2013-06, Vol.102 (22)

2013

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Lone conduction band in Cu2ZnSnSe4

Applied physics letters, 2012-03, Vol.100 (10)

2012

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Route Toward High-Efficiency Single-Phase Cu ZnSn(S,Se) Thin-Film Solar Cells: Model Experiments and Literature Review

IEEE journal of photovoltaics, 2011-10, Vol.1 (2), p.200-206

2011

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The three A symmetry Raman modes of kesterite in Cu2ZnSnSe4

Optics express, 2013-07, Vol.21 Suppl 4, p.A695-A703

2013

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Multiple phases of Cu{sub 2}ZnSnSe{sub 4} detected by room temperature photoluminescence

Journal of applied physics, 2014-08, Vol.116 (7)

2014

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Quantification of surface ZnSe in Cu2ZnSnSe4-based solar cells by analysis of the spectral response

Solar energy materials and solar cells, 2014-04, Vol.123, p.220-227

2014

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Epitaxial Cu2ZnSnSe4 thin films and devices

Thin solid films, 2015-05, Vol.582, p.193-197

2015

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High-speed electrodeposition of copper-tin-zinc stacks from liquid metal salts for Cu2ZnSnSe4 solar cells

Chemical communications (Cambridge, England), 2017-01, Vol.53 (5), p.913-916

2017

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Epitaxial Cu 2 ZnSnSe 4 thin films and devices

Thin solid films, 2015-05, Vol.582, p.193-197

2015

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High-speed electrodeposition of copper-tin-zinc stacks from liquid metal salts for Cu2ZnSnSe4 solar cellsElectronic supplementary information (ESI) available: (1) Synthesis and characterization of Sn LMS including a CIF file for the [Sn(G2)(EtOH)][Tf2N]2. (2) Metallic precursor synthesis and characterization. (3) Absorber synthesis and characterisation. (4) Solar cell fabrication and characterization. CCDC 1452178. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1

2017-01

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Lone conduction band in Cu 2 ZnSnSe 4

Applied physics letters, 2012-03, Vol.100 (10), p.102113-102113-4

2012

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High-speed electrodeposition of copper-tin-zinc stacks from liquid metal salts for Cu 2 ZnSnSe 4 solar cells

Chemical communications (Cambridge, England), 2017-01, Vol.53 (5), p.913-916

2017

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Cu sub(2)ZnSnSe sub(4) thin film solar cells produced via co-evaporation and annealing including a SnSe sub(2) capping layer

Progress in photovoltaics, 2014-01, Vol.22 (1), p.51-57

2014

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Cu 2 ZnSnSe 4 thin film solar cells produced via co‐evaporation and annealing including a SnSe 2 capping layer

Progress in photovoltaics, 2014-01, Vol.22 (1), p.51-57

2014

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Thin film solar cells based on the ternary compound Cu2SnS3

Raman analysis of monoclinic Cu2SnS3 thin films

Discrimination and detection limits of secondary phases in Cu2ZnSnS4 using X-ray diffraction and Raman spectroscopy

Direct Synthesis of Single-Phase p‑Type SnS by Electrodeposition from a Dicyanamide Ionic Liquid at High Temperature for Thin Film Solar Cells

Multiple phases of Cu2ZnSnSe4 detected by room temperature photoluminescence

Erratum: “Multiple phases of Cu2ZnSnSe4 detected by room temperature photoluminescence” [J. Appl. Phys. 116 , 073509 (2014)]

Cu-Rich Precursors Improve Kesterite Solar Cells

Electrochemical deposition as a unique solution processing method for insoluble organic optoelectronic materials

Graphene on Ir(111): physisorption with chemical modulation

HCl and Br2-MeOH etching of Cu2ZnSnSe4 polycrystalline absorbers

Cu2ZnSnSe4 thin film solar cells produced via co-evaporation and annealing including a SnSe2 capping layer

Detecting ZnSe secondary phase in Cu2ZnSnSe4 by room temperature photoluminescence

Lone conduction band in Cu2ZnSnSe4

Route Toward High-Efficiency Single-Phase Cu ZnSn(S,Se) Thin-Film Solar Cells: Model Experiments and Literature Review

The three A symmetry Raman modes of kesterite in Cu2ZnSnSe4

Multiple phases of Cu{sub 2}ZnSnSe{sub 4} detected by room temperature photoluminescence

Quantification of surface ZnSe in Cu2ZnSnSe4-based solar cells by analysis of the spectral response

Epitaxial Cu2ZnSnSe4 thin films and devices

High-speed electrodeposition of copper-tin-zinc stacks from liquid metal salts for Cu2ZnSnSe4 solar cells

Epitaxial Cu 2 ZnSnSe 4 thin films and devices

Lone conduction band in Cu 2 ZnSnSe 4

High-speed electrodeposition of copper-tin-zinc stacks from liquid metal salts for Cu 2 ZnSnSe 4 solar cells

Cu sub(2)ZnSnSe sub(4) thin film solar cells produced via co-evaporation and annealing including a SnSe sub(2) capping layer

Cu 2 ZnSnSe 4 thin film solar cells produced via co‐evaporation and annealing including a SnSe 2 capping layer

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