UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Hot-Carrier Effect on TID Irradiated Short-Channel UTTB FD-SOI n-MOSFETs

2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018), 2018, p.1-3

2018

Volltextzugriff (PDF)

Total dose ionizing irradiation effects on a static random access memory field programmable gate array

Journal of semiconductors, 2012-03, Vol.33 (3), p.42-47

2012

Volltextzugriff (PDF)

Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs

Journal of semiconductors, 2012, Vol.33 (1), p.64-67

崔江维薛耀国余学峰任迪远卢健张兴尧

2012

Volltextzugriff (PDF)

Hot-carrier effects on irradiated deep submicron NMOSFET

Journal of semiconductors, 2014-07, Vol.35 (7), p.52-55

崔江维郑齐文余学峰丛忠超周航郭旗文林魏莹任迪远

2014

Volltextzugriff (PDF)

The enhanced low dose rate sensitivity of a linear voltage regulator with different biases

Journal of semiconductors, 2011-03, Vol.32 (3), p.034007-1-4

2011

Volltextzugriff (PDF)

Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors

IEEE transactions on nuclear science, 2019-04, Vol.66 (4), p.702-709

2019

Volltextzugriff (PDF)

Total ionizing dose effects and annealing behavior for domestic VDMOS devices

Journal of semiconductors, 2010-04, Vol.31 (4), p.41-45

高博余学峰任迪远刘刚王义元孙静崔江维

2010

Volltextzugriff (PDF)

Nondestructive screening method for radiation hardened performance of large scale integration

Qiang ji guang yu li zi shu, 2013-02, Vol.25 (2), p.485-489

2013

Volltextzugriff (PDF)

Double humps and radiation effects of SOI NMOSFET

Journal of semiconductors, 2011-06, Vol.32 (6), p.44-46

崔江维余学峰任迪远何承发高博李明卢健

2011

Volltextzugriff (PDF)

Ionizing radiation effect on 10-bit bipolar A/D converter

Nuclear science and techniques, 2010-06, Vol.21 (3), p.152-156

CHEN Rui LU Wu REN Diyuan ZHENG Yuzhan WANG Yiyuan FEI Wuxiong LI Maoshun LAN Bo CUI Jiangwei

2010

Volltextzugriff (PDF)

Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose

IEEE transactions on nuclear science, 2018-02, Vol.65 (2), p.691-697

2018

Volltextzugriff (PDF)

Dose-rate effects of low-dropout voltage regulator at various biases

Nuclear science and techniques, 2010-12, Vol.21 (6), p.352-356

2010

Volltextzugriff (PDF)

Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM

IEEE transactions on nuclear science, 2019-06, Vol.66 (6), p.892-898

2019

Volltextzugriff (PDF)

Annealing behavior of radiation damage in JFET-input operational amplifiers

Journal of semiconductors, 2009-05, Vol.30 (5), p.60-64

郑玉展陆妩任迪远王义元郭旗余学锋

2009

Volltextzugriff (PDF)

Total-dose irradiation damage and annealing behavior of Altera SRAM-based FPGA

Qiang ji guang yu li zi shu, 2010-11, Vol.22 (11), p.2724-2728

2010

Volltextzugriff (PDF)

Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

Journal of semiconductors, 2010-03, Vol.31 (3), p.45-49

郑玉展陆妩任迪远王义元王志宽杨永晖

2010

Volltextzugriff (PDF)

Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs Supported by the National Natural Science Foundation of China under Grant Nos 11605282, 11505282 and U1532261, and the West Light Foundation of the Chinese Academy of Sciences under Grant No 2015-XBQN-B-15

Chinese physics letters, 2018-04, Vol.35 (4)

2018

Volltextzugriff (PDF)

Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs

Chinese physics letters, 2018-04, Vol.35 (4), p.46102

2018

Volltextzugriff (PDF)

Electron-induced damage to NPN transistors under different fluxes

Nuclear science and techniques, 2008-12, Vol.19 (6), p.333-336

2008

Volltextzugriff (PDF)

A new accelerated method for evaluating the ELDRS of bipolar operational amplifiers: Temperature switching approach

2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2013, p.1-4

2013

Volltextzugriff (PDF)

Use of temperature-switching approach to evaluate the ELDRS of bipolar devices

2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2016, p.1-5

2016

Volltextzugriff (PDF)

RELATIONSHIP BETWEEN SILICON-ON-INSULATOR KINK AND RADIATION EFFECTS

International journal of modern physics. E, Nuclear physics, 2011-06, Vol.20 (6), p.1409-1417

2011

Volltextzugriff (PDF)

Dose Rate Dependence of Electrical Characteristics of Lead Zirconate Titanate Capacitors

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 10), p.6491-6495

2003

Volltextzugriff (PDF)

The modification of SIMOX (separated by implantation of oxygen) material to improve the total-dose irradiation hardness

Journal of physics. Condensed matter, 1998-05, Vol.10 (20), p.4393-4399

1998

Volltextzugriff (PDF)

The annealing behavior of oxide trapped charges and interface traps in fluorinated NMOSFETS

Proceedings of International Conference on Microelectronics, 1995, Vol.1, p.269-272 vol.1

1995

Volltextzugriff (PDF)

1 – 25 von 30

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(24)
Mit Volltextzugriff
(27)

Publikationsform

Artikel
(24)
Tagungsberichte
(6)

Sprache

Englisch
(30)
Chinesisch
(2)

Erscheinungsjahr

n.n

Thema

Science & Technology
(22)
Physics
(18)
Physical Sciences
(16)
Physics, Condensed Matter
(9)
Technology
(9)
Engineering
(6)
Engineering, Electrical & Electronic
(6)
Irradiation
(6)
Nuclear Science & Technology
(6)
Radiation Effects
(6)
Annealing
(5)
Semiconductors
(5)
Transistors
(5)
低剂量率
(5)
Degradation
(4)
Devices
(4)
Eldrs
(4)
Ionizing Radiation
(4)
Mosfet Circuits
(4)
Physics, Nuclear
(4)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

3 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Hot-Carrier Effect on TID Irradiated Short-Channel UTTB FD-SOI n-MOSFETs

Total dose ionizing irradiation effects on a static random access memory field programmable gate array

Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs

Hot-carrier effects on irradiated deep submicron NMOSFET

The enhanced low dose rate sensitivity of a linear voltage regulator with different biases

Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors

Total ionizing dose effects and annealing behavior for domestic VDMOS devices

Nondestructive screening method for radiation hardened performance of large scale integration

Double humps and radiation effects of SOI NMOSFET

Ionizing radiation effect on 10-bit bipolar A/D converter

Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose

Dose-rate effects of low-dropout voltage regulator at various biases

Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM

Annealing behavior of radiation damage in JFET-input operational amplifiers

Total-dose irradiation damage and annealing behavior of Altera SRAM-based FPGA

Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs Supported by the National Natural Science Foundation of China under Grant Nos 11605282, 11505282 and U1532261, and the West Light Foundation of the Chinese Academy of Sciences under Grant No 2015-XBQN-B-15

Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs

Electron-induced damage to NPN transistors under different fluxes

A new accelerated method for evaluating the ELDRS of bipolar operational amplifiers: Temperature switching approach

Use of temperature-switching approach to evaluate the ELDRS of bipolar devices

RELATIONSHIP BETWEEN SILICON-ON-INSULATOR KINK AND RADIATION EFFECTS

Dose Rate Dependence of Electrical Characteristics of Lead Zirconate Titanate Capacitors

The modification of SIMOX (separated by implantation of oxygen) material to improve the total-dose irradiation hardness

The annealing behavior of oxide trapped charges and interface traps in fluorinated NMOSFETS

Suchergebnisse filtern