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Chemical beam epitaxial growth of InAs using trimethylindium and arsine

Applied physics letters, 1990-05, Vol.56 (22), p.2219-2221

1990

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Chemical beam epitaxial growth of extremely high quality InGaAs on InP

Applied physics letters, 1986-07, Vol.49 (3), p.170-172

1986

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Characterization of the GaAs: C and AlGaAs: C doping superlattice grown by chemical beam epitaxy

Journal of crystal growth, 1991-05, Vol.111 (1), p.274-279

1991

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Doping studies using thermal beams in chemical-beam epitaxy

Journal of applied physics, 1986-12, Vol.60 (12), p.4182-4185

1986

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Chemical beam epitaxial growth of strained carbon-doped GaAs

Applied physics letters, 1990-07, Vol.57 (2), p.171-173

1990

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Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3

Applied physics letters, 1990-04, Vol.56 (17), p.1688-1690

1990

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Two-dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxy

Applied physics letters, 1986-10, Vol.49 (15), p.960-962

1986

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The Effect of Substrate Temperature on the Current Threshold of GaAs--AlxGa1--xAs Double-Heterostructure Lasers Grown by Molecular Beam Epitaxy

Applied physics letters, 1980-01, Vol.36 (2), p.118-119

1980

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Growth of device quality GaAs by chemical beam epitaxy

Journal of electronic materials, 1988-05, Vol.17 (3), p.217-221

1988

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Single-longitudinal mode performance characteristics of cleaved-coupled-cavity lasers

Applied physics letters, 1983-12, Vol.43 (11), p.1003-1005

1983

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Multilongitudinal mode operation in angled stripe buried heterostructure lasers

Journal of applied physics, 1983-02, Vol.54 (2), p.1137-1140

1983

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A visible (AlGa)As heterostructure laser grown by molecular beam epitaxy

Applied physics letters, 1981-08, Vol.39 (3), p.193-194

1981

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GaSb0.5As0.5/Al0.35Ga0.65Sb0.48As0.52 superlattice lattice matched to InP prepared by molecular beam epitaxy

Applied physics letters, 1985-04, Vol.46 (7), p.659-661

1985

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Diffusion of Donor and Acceptor Elements in Silicon

Journal of applied physics, 1956-01, Vol.27 (5), p.544-553

1956

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Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasers

Electronics letters, 1982-09, Vol.18 (19), p.845-847

1982

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Optical Studies of Antiferromagnetism in Chromium and Its Alloys

Physical review. B, Solid state, 1970-06, Vol.1 (11), p.4378-4400

1970

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Room-temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy

Applied physics letters, 1986-10, Vol.49 (17), p.1051-1052

1986

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Effect of Structural Defects in Germanium on the Diffusion and Acceptor Behavior of Copper

Journal of applied physics, 1957-01, Vol.28 (1), p.40-48

1957

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Growth of high-quality GaxIn1-xAsyP1-y by chemical beam epitaxy

Applied physics letters, 1987-09, Vol.51 (10), p.761-763

1987

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Infrared study of the electronic instabilities in tantalum disulfide and tantalum diselenide

Physical review. B, Solid state, 1975-09, Vol.12 (6), p.2049-2054

1975

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Very Low Current Threshold GaAs--AlxGa1--xAs Double Heterostructure Lasers Grown by Molecular Beam Epitaxy

Applied physics letters, 1980-01, Vol.36 (1), p.11-14

Tsang, W T

1980

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Molecular beam epitaxy of GaSb0.5As0.5 and AlxGa1-xSbyAs1-y lattice matched to InP

Applied physics letters, 1985, Vol.46 (4), p.408-410

1985

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Growth and diffusion study of carbon doped GaAs superlattice grown by chemical beam epitaxy

Journal of crystal growth, 1991, Vol.107 (1), p.1051-1052

1991

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Very high purity GaAs grown by gas source molecular beam epitaxy

Journal of crystal growth, 1989-02, Vol.95 (1), p.185-188

1989

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Growth of InAsSb alloy and InAsSb/GaSb superlattice lattice matched to (100) GaSb by molecular-beam epitaxy

Journal of applied physics, 1986-07, Vol.60 (1), p.205-207

1986

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Chemical beam epitaxial growth of InAs using trimethylindium and arsine

Chemical beam epitaxial growth of extremely high quality InGaAs on InP

Characterization of the GaAs: C and AlGaAs: C doping superlattice grown by chemical beam epitaxy

Doping studies using thermal beams in chemical-beam epitaxy

Chemical beam epitaxial growth of strained carbon-doped GaAs

Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3

Two-dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxy

The Effect of Substrate Temperature on the Current Threshold of GaAs--AlxGa1--xAs Double-Heterostructure Lasers Grown by Molecular Beam Epitaxy

Growth of device quality GaAs by chemical beam epitaxy

Single-longitudinal mode performance characteristics of cleaved-coupled-cavity lasers

Multilongitudinal mode operation in angled stripe buried heterostructure lasers

A visible (AlGa)As heterostructure laser grown by molecular beam epitaxy

GaSb0.5As0.5/Al0.35Ga0.65Sb0.48As0.52 superlattice lattice matched to InP prepared by molecular beam epitaxy

Diffusion of Donor and Acceptor Elements in Silicon

Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasers

Optical Studies of Antiferromagnetism in Chromium and Its Alloys

Room-temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy

Effect of Structural Defects in Germanium on the Diffusion and Acceptor Behavior of Copper

Growth of high-quality GaxIn1-xAsyP1-y by chemical beam epitaxy

Infrared study of the electronic instabilities in tantalum disulfide and tantalum diselenide

Very Low Current Threshold GaAs--AlxGa1--xAs Double Heterostructure Lasers Grown by Molecular Beam Epitaxy

Molecular beam epitaxy of GaSb0.5As0.5 and AlxGa1-xSbyAs1-y lattice matched to InP

Growth and diffusion study of carbon doped GaAs superlattice grown by chemical beam epitaxy

Very high purity GaAs grown by gas source molecular beam epitaxy

Growth of InAsSb alloy and InAsSb/GaSb superlattice lattice matched to (100) GaSb by molecular-beam epitaxy

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