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2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018, p.3918-3922

2018

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Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

Applied physics letters, 2015-07, Vol.107 (3)

2015

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Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

Applied physics letters, 2015-07, Vol.107 (3)

2015

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Verfügbarkeit prüfen

Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

Applied physics letters, 2015-07, Vol.107 (3)

2015

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Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots

Journal of crystal growth, 2014-11, Vol.406 (C)

2014

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Effects of Thermochemical Treatment on CuSbS2 Photovoltaic Absorber Quality and Solar Cell Reproducibility

Solar Energy Conversion Properties and Defect Physics of ZnSiP2

Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP

Exciton photoluminescence and benign defect complex formation in zinc tin nitride

Reducing interface recombination for Cu(In,Ga)Se2 by atomic layer deposited buffer layers

Zn2SbN3: growth and characterization of a metastable photoactive semiconductor

Charge carrier dynamics and recombination in graded band gap CuIn1−xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers

Optoelectronic Characterization of Emerging Solar Absorber Cu3AsS4

Characterization of defects in copper antimony disulfide

Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots

Impact of delta-doping position on photoluminescence in type-II InAs GaAsSb quantum dots

Synthesis, stoichiometry and thermal stability of Zn3N2 powders prepared by ammonolysis reactions

Use of a GaAsSb buffer layer for the formation of small, uniform,and dense InAs quantum dots

Development of ZnSiP for Si-Based Tandem Solar Cells

Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP

Nanocrystal formation in annealed a-SiO0.17N0.07:H films

Spectroscopic ellipsometry and photoluminescence measurements of as-deposited and annealed silicon rich oxynitride films

Chemical, optical, vibrational and luminescent properties of hydrogenated silicon-rich oxynitride films

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

Characterization of defects in copper antimony disulfideElectronic supplementary information (ESI) available. See DOI: 10.1039/c7ta07012h

Optical Spectroscopic Probes of Degradation and Metastability in Polycrystalline (Ag,Cu)(In,Ga)Se2 Absorbers

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots

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