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Growth of Lattice-Matched ZnTeSe Alloys on (100) and (211)B GaSb

Journal of electronic materials, 2012-10, Vol.41 (10), p.2738-2744

2012

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Determination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates

Journal of electronic materials, 2013-11, Vol.42 (11), p.3090-3096

2013

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Critical Thickness of ZnTe on GaSb(211)B

Journal of electronic materials, 2012-11, Vol.41 (11), p.3001-3006

2012

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The Distribution Tail of LWIR HgCdTe-on-Si FPAs: a Hypothetical Physical Mechanism

Journal of electronic materials, 2011-03, Vol.40 (3), p.280-288

2011

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Role of dislocation scattering on the electron mobility of n-type long wave length infrared HgCdTe on silicon

Journal of electronic materials, 2007-08, Vol.36 (8), p.1098-1105

2007

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Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance

Journal of electronic materials, 2005-06, Vol.34 (6), p.832-838

2005

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Molecular beam epitaxy growth of high-quality hgcdte LWIR layers on polished and repolished CdZnTe substrates

Journal of electronic materials, 2005-06, Vol.34 (6), p.885-890

2005

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Influence of substrate orientation on the growth of HgCdTe by molecular beam epitaxy

Journal of electronic materials, 2006-06, Vol.35 (6), p.1214-1218

2006

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LWIR HgCdTe on Si detector performance and analysis

Journal of electronic materials, 2006-06, Vol.35 (6), p.1417-1422

2006

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Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance

Journal of electronic materials, 2004-06, Vol.33 (6), p.531-537

2004

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Correlation of CdZnTe(211)B substrate surface morphology and HgCdTe(211)B epilayer defects

Journal of electronic materials, 2004-08, Vol.33 (8), p.881-885

2004

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A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe ir detectors and focal plane arrays

Journal of electronic materials, 2001-06, Vol.30 (6), p.590-594

2001

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Characterization of HgCdTe diodes on Si substrates using temperature-dependent current-voltage measurements and deep level transient spectroscopy

Journal of electronic materials, 2007-08, Vol.36 (8), p.832-836

2007

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Effects of excess tellurium on the properties of CdZnTe radiation detectors

Journal of electronic materials, 2003-07, Vol.32 (7), p.778-782

2003

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A langmuir probe investigation of electron cyclotron resonance argon-hydrogen plasmas

Journal of electronic materials, 2005-06, Vol.34 (6), p.733-739

2005

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The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe

Journal of electronic materials, 2003-07, Vol.32 (7), p.692-697

2003

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Epitaxial growth of CdTe on (211) silicon mesas formed by deep reactive ion etching

Journal of electronic materials, 2006-08, Vol.35 (8), p.1636-1640

2006

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Development of a high-selectivity process for electron cyclotron resonance plasma etching of II-VI semiconductors

Journal of electronic materials, 2002-07, Vol.31 (7), p.749-753

2002

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Material quality characterization of CdZnTe substrates for HgCdTe epitaxy

Journal of electronic materials, 2006-06, Vol.35 (6), p.1495-1502

2006

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Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma

Journal of electronic materials, 2006-06, Vol.35 (6), p.1465-1469

2006

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Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication

Journal of electronic materials, 2005-06, Vol.34 (6), p.746-753

2005

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Improved morphology and crystalline quality of MBE CdZnTe/Si

Journal of electronic materials, 2001-06, Vol.30 (6), p.608-610

2001

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Development and fabrication of two-color mid- and short-wavelength infrared simultaneous unipolar multispectral integrated technology focal-plane arrays

Journal of electronic materials, 2002-07, Vol.31 (7), p.669-676

2002

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Determination of the ion angular distribution for electron cyclotron resonance, plasma-etched HgCdTe trenches

Journal of electronic materials, 2004-06, Vol.33 (6), p.543-551

2004

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Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long-wavelength infrared HgCdTe on Si

Journal of electronic materials, 2006-06, Vol.35 (6), p.1385-1390

2006

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Growth of Lattice-Matched ZnTeSe Alloys on (100) and (211)B GaSb

Determination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates

Critical Thickness of ZnTe on GaSb(211)B

The Distribution Tail of LWIR HgCdTe-on-Si FPAs: a Hypothetical Physical Mechanism

Role of dislocation scattering on the electron mobility of n-type long wave length infrared HgCdTe on silicon

Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance

Molecular beam epitaxy growth of high-quality hgcdte LWIR layers on polished and repolished CdZnTe substrates

Influence of substrate orientation on the growth of HgCdTe by molecular beam epitaxy

LWIR HgCdTe on Si detector performance and analysis

Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance

Correlation of CdZnTe(211)B substrate surface morphology and HgCdTe(211)B epilayer defects

A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe ir detectors and focal plane arrays

Characterization of HgCdTe diodes on Si substrates using temperature-dependent current-voltage measurements and deep level transient spectroscopy

Effects of excess tellurium on the properties of CdZnTe radiation detectors

A langmuir probe investigation of electron cyclotron resonance argon-hydrogen plasmas

The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe

Epitaxial growth of CdTe on (211) silicon mesas formed by deep reactive ion etching

Development of a high-selectivity process for electron cyclotron resonance plasma etching of II-VI semiconductors

Material quality characterization of CdZnTe substrates for HgCdTe epitaxy

Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma

Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication

Improved morphology and crystalline quality of MBE CdZnTe/Si

Development and fabrication of two-color mid- and short-wavelength infrared simultaneous unipolar multispectral integrated technology focal-plane arrays

Determination of the ion angular distribution for electron cyclotron resonance, plasma-etched HgCdTe trenches

Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long-wavelength infrared HgCdTe on Si

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