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Comment on “Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures” [Appl. Phys. Lett. 109, 011604 (2016)]

Applied physics letters, 2016-11, Vol.109 (19)

Dimitrijev, Sima

2016

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Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

Scientific reports, 2019-03, Vol.9 (1), p.3754-3754, Article 3754

2019

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Quantified density of performance-degrading near-interface traps in SiC MOSFETs

Scientific reports, 2022-03, Vol.12 (1), p.4076-4076, Article 4076

2022

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The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

Journal of microelectromechanical systems, 2015-12, Vol.24 (6), p.1663-1677

2015

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The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents

Scientific reports, 2023-11, Vol.13 (1), p.19189-19189, Article 19189

2023

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Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

MRS bulletin, 2015-05, Vol.40 (5), p.399-405

2015

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Electrically Active Defects in SiC Power MOSFETs

Energies (Basel), 2023-02, Vol.16 (4), p.1771

2023

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Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2670-2674, Article 2670

2015

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Active defects in MOS devices on 4H-SiC: A critical review

Microelectronics and reliability, 2016-05, Vol.60, p.1-9

2016

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Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

Scientific reports, 2016-06, Vol.6 (1), p.28499-28499, Article 28499

2016

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Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

Thin solid films, 2011-07, Vol.519 (19), p.6443-6446

2011

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Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

Scientific reports, 2017-12, Vol.7 (1), p.17734-11, Article 17734

2017

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Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

Applied physics letters, 2014-03, Vol.104 (11)

2014

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Piezoresistive Effect of p-Type Single Crystalline 3C-SiC Thin Film

IEEE electron device letters, 2014-03, Vol.35 (3), p.399-401

2014

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Circuit-Specific and Technology-Independent Criterion for Selection of Power MOSFETs that Minimize Energy Dissipation

IEEE access, 2023-01, Vol.11, p.1-1

2023

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Effects of nitridation in gate oxides grown on 4H-SiC

Journal of applied physics, 2001-11, Vol.90 (10), p.5058-5063

2001

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Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation

AIP advances, 2023-05, Vol.13 (5), p.055126-055126-6

2023

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Mechanism of Threshold Voltage Shift in -GaN Gate AlGaN/GaN Transistors

IEEE electron device letters, 2018-08, Vol.39 (8), p.1145-1148

2018

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A catalytic alloy approach for graphene on epitaxial SiC on silicon wafers

Journal of materials research, 2015-03, Vol.30 (5), p.609-616

2015

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A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.545-553

2020

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Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates

Scientific reports, 2015-10, Vol.5 (1), p.15423-15423, Article 15423

2015

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Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method

IEEE access, 2021, Vol.9, p.109745-109753

2021

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The Correct Equation for the Current Through Voltage-Dependent Capacitors

IEEE access, 2020, Vol.8, p.98038-98043

2020

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Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias

Japanese Journal of Applied Physics, 2018-12, Vol.57 (12), p.124101

2018

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Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nanothin films

Journal of materials chemistry. C, Materials for optical and electronic devices, 2014-09, Vol.2 (35), p.7176-7179

2014

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Comment on “Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures” [Appl. Phys. Lett. 109, 011604 (2016)]

Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

Quantified density of performance-degrading near-interface traps in SiC MOSFETs

The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents

Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

Electrically Active Defects in SiC Power MOSFETs

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs

Active defects in MOS devices on 4H-SiC: A critical review

Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

Piezoresistive Effect of p-Type Single Crystalline 3C-SiC Thin Film

Circuit-Specific and Technology-Independent Criterion for Selection of Power MOSFETs that Minimize Energy Dissipation

Effects of nitridation in gate oxides grown on 4H-SiC

Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation

Mechanism of Threshold Voltage Shift in -GaN Gate AlGaN/GaN Transistors

A catalytic alloy approach for graphene on epitaxial SiC on silicon wafers

A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms

Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates

Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method

The Correct Equation for the Current Through Voltage-Dependent Capacitors

Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias

Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nanothin films

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