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3D-interconnect: Visualization of extrusion and voids induced in copper-filled through-silicon vias (TSVs) at various temperatures using X-ray microscopy

Microelectronic engineering, 2012-04, Vol.92, p.24-28

2012

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Thin Dielectric Film Thickness Determination by Advanced Transmission Electron Microscopy

Microscopy and microanalysis, 2003-12, Vol.9 (6), p.493-508

2003

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Application of Aberration-Corrected TEM and Image Simulation to Nanoelectronics and Nanotechnology

IEEE transactions on semiconductor manufacturing, 2006-11, Vol.19 (4), p.391-396

2006

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Metrology technology for the 70-nm node: process control through amplification and averaging microscopic changes

IEEE transactions on semiconductor manufacturing, 2002-05, Vol.15 (2), p.169-182

Diebold, A.C.

2002

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Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD

Thin solid films, 2011-02, Vol.519 (9), p.2929-2932

2011

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Line and via voiding measurements in damascene copper lines using metal illumination

IEEE transactions on semiconductor manufacturing, 2003-08, Vol.16 (3), p.409-416

2003

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Identifying the Optical Response of Graphene Using Electron Energy-Loss Spectroscopy

Microscopy and microanalysis, 2013-08, Vol.19 (S2), p.1938-1939

2013

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Survey of characterization and metrology for nanoelectronics

2008 IEEE International Reliability Physics Symposium, 2008, p.50-51

Diebold, A.C.

2008

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Quantitative analysis of titanium nitride by auger electron spectroscopy

Thin solid films, 1990, Vol.193 (1-2), p.305-311

1990

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Image formation in the high-resolution transmission electronmicroscope

Microscopy and microanalysis, 2005-07, Vol.10 (4)

2005

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Metrology Challenges for 100 nm and Beyond

Encyclopedia of Materials: Science and Technology, 2011, p.5559-5569

Diebold, A.C.

2011

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Authors' Response

Microscopy and microanalysis, 2004-08, Vol.10 (4), p.399-400

2004

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Authors' Response

Microscopy and microanalysis, 2004-08, Vol.10 (4), p.399-400

2004

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Overview of metrology requirements based on the 1994 National Technology Roadmap for semiconductors

Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop, 1995, p.50-60

Diebold, A.C.

1995

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Networked analysis systems

Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop, 1995, p.62

Diebold, A.C.

1995

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The ITRS metrology roadmap

2009 International Semiconductor Device Research Symposium, 2009, p.1-2

Diebold, A.C.

2009

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Metrology strategy for next generation semiconductor manufacturing

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130), 2000, p.91-93

Diebold, A.C.

2000

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Metrology at the leading edge

2006 IEEE/UT Engineering Management Conference, 2006, p.9-10

Diebold, A.C.

2006

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Using heavy ion backscattering spectrometry (HIBS) to solve integrated circuit manufacturing problems

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-03, Vol.136, p.1223-1228

1998

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Calibration of reference materials for total-reflection X-ray fluorescence analysis by heavy ion backscattering spectrometry

Spectrochimica acta. Part B : Atomic spectroscopy, 1997-07, Vol.52 (7), p.881-886

1997

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Conference Report: Second Workshop on Industrial Applications of Scanned Probe Microscopy Gaithersburg, MD May 2-3, 1995 - Abstracts

Journal of research of the National Institute of Standards and Technology, 1996-01, Vol.101 (1), p.69

1996

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Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films

High Dielectric Constant Materials, p.483-520

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Interconnect metrology roadmap: status and future

Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247), 1999, p.77-79

1999

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Theory of charge transfer for desorption of ions from surfaces

Surface science, 1983-01, Vol.124 (2), p.461-488

1983

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Thickness measurement for Cu and Ta thin films using optoacoustics

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407), 2000, p.176-178

2000

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3D-interconnect: Visualization of extrusion and voids induced in copper-filled through-silicon vias (TSVs) at various temperatures using X-ray microscopy

Thin Dielectric Film Thickness Determination by Advanced Transmission Electron Microscopy

Application of Aberration-Corrected TEM and Image Simulation to Nanoelectronics and Nanotechnology

Metrology technology for the 70-nm node: process control through amplification and averaging microscopic changes

Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD

Line and via voiding measurements in damascene copper lines using metal illumination

Identifying the Optical Response of Graphene Using Electron Energy-Loss Spectroscopy

Survey of characterization and metrology for nanoelectronics

Quantitative analysis of titanium nitride by auger electron spectroscopy

Image formation in the high-resolution transmission electronmicroscope

Metrology Challenges for 100 nm and Beyond

Authors' Response

Authors' Response

Overview of metrology requirements based on the 1994 National Technology Roadmap for semiconductors

Networked analysis systems

The ITRS metrology roadmap

Metrology strategy for next generation semiconductor manufacturing

Metrology at the leading edge

Using heavy ion backscattering spectrometry (HIBS) to solve integrated circuit manufacturing problems

Calibration of reference materials for total-reflection X-ray fluorescence analysis by heavy ion backscattering spectrometry

Conference Report: Second Workshop on Industrial Applications of Scanned Probe Microscopy Gaithersburg, MD May 2-3, 1995 - Abstracts

Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films

Interconnect metrology roadmap: status and future

Theory of charge transfer for desorption of ions from surfaces

Thickness measurement for Cu and Ta thin films using optoacoustics

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