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A ROOM TEMPERATURE BALLISTIC DEFLECTION TRANSISTOR FOR HIGH PERFORMANCE APPLICATIONS

International journal of high speed electronics, 2009-03, Vol.19 (1), p.23-31

2009

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1.5-kV and 2.2-m \(\Omega \) -cm \(^\) Vertical GaN Transistors on Bulk-GaN Substrates

IEEE electron device letters, 2014-09, Vol.35 (9), p.939-941

2014

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nand Gate Design for Ballistic Deflection Transistors

IEEE transactions on nanotechnology, 2011-01, Vol.10 (1), p.150-154

2011

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3,000+ Hours continuous operation of GaN-on-Diamond HEMTs at 350°c channel temperature

2014 Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2014, p.242-246

2014

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1000V Vertical JFET Using Bulk GaN

ECS transactions, 2013, Vol.58 (4), p.295-298

2013

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Laser machining of GaN-on-diamond wafers

Diamond and related materials, 2011-05, Vol.20 (5), p.675-681

2011

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SIMULATION AND EXPERIMENTAL RESULTS ON GaN BASED ULTRA-SHORT PLANAR NEGATIVE DIFFERENTIAL CONDUCTIVITY DIODES FOR THz POWER GENERATION

International journal of high speed electronics, 2009-03, Vol.19 (1), p.1-6

2009

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NOVEL HIGH TEMPERATURE ANNEALED SCHOTTKY METAL FOR GaN DEVICES

International journal of high speed electronics, 2011-09, Vol.20 (3), p.417-422

2011

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A Terahertz Transistor Based on Geometrical Deflection of Ballistic Current

2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.345-347

2006

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Ultra high performance mixed signal design

Diduck, Quentin

2007

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Ultra high performance mixed signal design

Diduck, Quentin

2007

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Ballistic deflection transistors and the emerging nanoscale era

2009 IEEE International Symposium on Circuits and Systems (ISCAS), 2009, p.61-64

2009

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Minimization of maximum electric field in high-voltage parallel-plate capacitor

2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2016, p.99-103

2016

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Class-D GaN 15MHz-bandwidth amplitude modulator with a direct CMOS interface

2016 IEEE 17th Annual Wireless and Microwave Technology Conference (WAMICON), 2016, p.1-4

2016

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Process tolerant calibration circuit for PLL applications with BIST

2006 IEEE International Symposium on Circuits and Systems (ISCAS), 2006, p.4 pp.-2480

2006

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A 300MHz to 1200MHz saturated broadband amplifier in GaN for 2W applications

2016 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS), 2016, p.1-4

2016

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Importance and measurement of phase-stiffness in RF switching amplifiers

2016 87th ARFTG Microwave Measurement Conference (ARFTG), 2016, p.1-4

2016

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A new test methodology for DNL error in flash ADCs

20th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (DFT'05), 2005, p.582-590

2005

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Study of leakage current mechanisms in ballistic deflection transistors

Proceedings of the 19th ACM Great Lakes symposium on VLSI, 2009, p.165-168

2009

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175,000 device-hours operation of AlGaN/GaN HEMTs on diamond at 200°C channel temperature

2013 36th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2013, p.55-59

2013

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1000V Vertical Jfet Using Bulk GaN

Meeting abstracts (Electrochemical Society), 2013-10, Vol.MA2013-02 (25), p.1932-1932

2013

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Performance optimization of room temperature Deflection Transistors through modified geometry

2008 1st Microsystems and Nanoelectronics Research Conference, 2008, p.145-148

2008

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Nanotechnology based energy generation from thermal radiation

Canadian Conference on Electrical and Computer Engineering 2004 (IEEE Cat. No.04CH37513), 2004, Vol.3, p.1597-1600 Vol.3

2004

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6-Bit low power low area frequency modulation based flash ADC

2004

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A ROOM TEMPERATURE BALLISTIC DEFLECTION TRANSISTOR FOR HIGH PERFORMANCE APPLICATIONS

1.5-kV and 2.2-m \(\Omega \) -cm \(^\) Vertical GaN Transistors on Bulk-GaN Substrates

nand Gate Design for Ballistic Deflection Transistors

3,000+ Hours continuous operation of GaN-on-Diamond HEMTs at 350°c channel temperature

1000V Vertical JFET Using Bulk GaN

Laser machining of GaN-on-diamond wafers

SIMULATION AND EXPERIMENTAL RESULTS ON GaN BASED ULTRA-SHORT PLANAR NEGATIVE DIFFERENTIAL CONDUCTIVITY DIODES FOR THz POWER GENERATION

NOVEL HIGH TEMPERATURE ANNEALED SCHOTTKY METAL FOR GaN DEVICES

A Terahertz Transistor Based on Geometrical Deflection of Ballistic Current

Ultra high performance mixed signal design

Ultra high performance mixed signal design

Ballistic deflection transistors and the emerging nanoscale era

Minimization of maximum electric field in high-voltage parallel-plate capacitor

Class-D GaN 15MHz-bandwidth amplitude modulator with a direct CMOS interface

Process tolerant calibration circuit for PLL applications with BIST

A 300MHz to 1200MHz saturated broadband amplifier in GaN for 2W applications

Importance and measurement of phase-stiffness in RF switching amplifiers

A new test methodology for DNL error in flash ADCs

Study of leakage current mechanisms in ballistic deflection transistors

175,000 device-hours operation of AlGaN/GaN HEMTs on diamond at 200°C channel temperature

1000V Vertical Jfet Using Bulk GaN

Performance optimization of room temperature Deflection Transistors through modified geometry

Nanotechnology based energy generation from thermal radiation

6-Bit low power low area frequency modulation based flash ADC

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