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Electron irradiation of near‐UV GaN/InGaN light emitting diodes

Physica status solidi. A, Applications and materials science, 2017-10, Vol.214 (10), p.n/a

2017

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Micro-pixelated halide perovskite photodiodes fabricated with ultraviolet laser scribing

Applied physics letters, 2024-05, Vol.124 (22)

2024

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Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation

Applied physics letters, 2018-12, Vol.113 (26)

2018

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On the relation between mobile ion kinetics, device design, and doping in double-cation perovskite solar cells

Applied physics letters, 2021-03, Vol.118 (9)

2021

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Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy

Applied physics letters, 2017-03, Vol.110 (11)

2017

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Nitride heterostructure optimization by simulation

Journal of crystal growth, 2017-06, Vol.468, p.567-571

2017

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Nanoheterostructures optimization and characteristics improvement for devices based on them

Crystallography reports, 2017-05, Vol.62 (3), p.474-479

2017

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The experimental and theoretical characterization of the SAW propagation properties for zinc oxide films on silicon carbide

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2000-01, Vol.47 (1), p.179-187

2000

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Hafnia-yttria-alumina-silica based optical fibers with diminished mid-IR (>2 µm) loss

Optical materials express, 2017-07, Vol.7 (7), p.2511

2017

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Effect of electron irradiation on the optical properties of bismuth doped hafnia-yttria-alumina-silicate fiber

Optical materials express, 2018-09, Vol.8 (9), p.2550

2018

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Development of betavoltaic cell technology production based on microchannel silicon and its electrical parameters evaluation

Applied radiation and isotopes, 2017-03, Vol.121, p.71-75

2017

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Impact of electron irradiation upon optical properties of Bismuth/Yttria codoped phosphosilicate fiber

Optics and laser technology, 2020-08, Vol.128, p.106245, Article 106245

2020

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Fast-Neutron Detectors Based on Surface-Barrier GaAs Sensors with an Ultrahigh-Molecular-Weight Polyethylene Converter

Instruments and experimental techniques (New York), 2019-07, Vol.62 (3), p.312-316

2019

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Investigation of the thermal annealing effect on electrical properties of Ni/Au, Ni/Mo/Au and Mo/Au Schottky barriers on AlGaN/GaN heterostructures

Journal of physics. Conference series, 2017-03, Vol.816 (1), p.12039

2017

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Effects of electron-irradiation darkening and its posterior bleaching by light in novel Cr-Mg-YAS fiber

Laser physics letters, 2016-12, Vol.13 (12), p.125103

2016

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Effects of elevating temperature and high-temperature annealing upon state-of-the-art of yttia-alumino-silicate fibers doped with Bismuth

Optical materials express, 2016-02, Vol.6 (2), p.486-508

2016

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Optical Properties and Microdefects in CaMoO4 Single Crystals

Crystallography reports, 2018-03, Vol.63 (2), p.216-221

2018

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Spectral sensitivity characteristics simulation for silicon p-i-n photodiode

Journal of physics. Conference series, 2015-11, Vol.643 (1), p.12068

2015

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Testing of a Prototype Detector of Heavy Charged Particles Based on Diamond Epitaxial Films Obtained by Gas-Phase Deposition

Instruments and experimental techniques (New York), 2019-10, Vol.62 (4), p.473-479

2019

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GaAs Schottky Barrier Detectors for Alpha-Particle Spectrometry at Temperatures up to 120°C

Technical physics letters, 2018-10, Vol.44 (10), p.942-945

2018

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Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays

Instruments and experimental techniques (New York), 2018-09, Vol.61 (5), p.665-672

2018

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Betavoltaic p--n+-structure simulation

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12094

2016

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Direct Fast-Neutron Detection with Diamond Homoepitaxial Me–p––p+ Structures

Nanotechnologies in Russia, 2019-09, Vol.14 (9-10), p.476-480

2019

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Monolithic ionizing particle detector based on active matrix of functionally integrated structures

Journal of alloys and compounds, 2014-02, Vol.586, p.S553-S557

2014

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Investigation of radiation influence on LED

IOP conference series. Materials Science and Engineering, 2017-01, Vol.168 (1), p.12047

2017

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Electron irradiation of near‐UV GaN/InGaN light emitting diodes

Micro-pixelated halide perovskite photodiodes fabricated with ultraviolet laser scribing

Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation

On the relation between mobile ion kinetics, device design, and doping in double-cation perovskite solar cells

Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy

Nitride heterostructure optimization by simulation

Nanoheterostructures optimization and characteristics improvement for devices based on them

The experimental and theoretical characterization of the SAW propagation properties for zinc oxide films on silicon carbide

Hafnia-yttria-alumina-silica based optical fibers with diminished mid-IR (>2 µm) loss

Effect of electron irradiation on the optical properties of bismuth doped hafnia-yttria-alumina-silicate fiber

Development of betavoltaic cell technology production based on microchannel silicon and its electrical parameters evaluation

Impact of electron irradiation upon optical properties of Bismuth/Yttria codoped phosphosilicate fiber

Fast-Neutron Detectors Based on Surface-Barrier GaAs Sensors with an Ultrahigh-Molecular-Weight Polyethylene Converter

Investigation of the thermal annealing effect on electrical properties of Ni/Au, Ni/Mo/Au and Mo/Au Schottky barriers on AlGaN/GaN heterostructures

Effects of electron-irradiation darkening and its posterior bleaching by light in novel Cr-Mg-YAS fiber

Effects of elevating temperature and high-temperature annealing upon state-of-the-art of yttia-alumino-silicate fibers doped with Bismuth

Optical Properties and Microdefects in CaMoO4 Single Crystals

Spectral sensitivity characteristics simulation for silicon p-i-n photodiode

Testing of a Prototype Detector of Heavy Charged Particles Based on Diamond Epitaxial Films Obtained by Gas-Phase Deposition

GaAs Schottky Barrier Detectors for Alpha-Particle Spectrometry at Temperatures up to 120°C

Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays

Betavoltaic p--n+-structure simulation

Direct Fast-Neutron Detection with Diamond Homoepitaxial Me–p––p+ Structures

Monolithic ionizing particle detector based on active matrix of functionally integrated structures

Investigation of radiation influence on LED

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