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An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III-V NMOS

IEEE electron device letters, 2012-04, Vol.33 (4), p.501-503

2012

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IEEE_Xplore

High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates

Journal of crystal growth, 2013-11, Vol.383, p.9-11

2013

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Development of a third-generation biosensor to determine sterigmatocystin mycotoxin: An early warning system to detect aflatoxin B1

Talanta (Oxford), 2019-03, Vol.194, p.253-258

2019

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PCM-Based Analog Compute-In-Memory: Impact of Device Non-Idealities on Inference Accuracy

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5585-5591

2021

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IEEE_Xplore

An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling

IEEE electron device letters, 2001-06, Vol.22 (6), p.287-289

2001

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IEEE_Xplore

Uncertainties in projected impacts of climate change on European agriculture and terrestrial ecosystems based on scenarios from regional climate models

Climatic change, 2007-05, Vol.81 (1), p.123-143

2007

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Growth of heterostructures on InAs for high mobility device applications

Journal of crystal growth, 2013-09, Vol.378, p.117-120

2013

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High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.377-378

2022

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Seroprevalence against R. rickettsii, R. typhi and R. felis in human samples from prioritized rural areas in department of Cauca, Colombia

International journal of infectious diseases, 2020-12, Vol.101, p.544-544

2020

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Pi-Gate SOI MOSFET

IEEE electron device letters, 2001-08, Vol.22 (8), p.405-406

2001

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IEEE_Xplore

InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

Applied physics letters, 2013-09, Vol.103 (14)

2013

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MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)

IEEE electron device letters, 1999-06, Vol.20 (6), p.292-294

1999

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IEEE_Xplore

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

AIP advances, 2014-04, Vol.4 (4), p.047108-047108-9

2014

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MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures

Journal of crystal growth, 2013-07, Vol.374, p.43-48

2013

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Exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design

IEEE journal of solid-state circuits, 2001-10, Vol.36 (10), p.1480-1488

2001

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IEEE_Xplore

Transistor-and Circuit-Design Optimization for Low-Power CMOS

IEEE transactions on electron devices, 2008-01, Vol.55 (1), p.84-95

2008

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IEEE_Xplore

CMOS technology for MS/RF SoC

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.557-566

2003

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IEEE_Xplore

Leakage scaling in deep submicron CMOS for SoC

IEEE transactions on electron devices, 2002-06, Vol.49 (6), p.1034-1041

2002

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IEEE_Xplore

Separation of channel backscattering coefficients in nanoscale MOSFETs

IEEE transactions on electron devices, 2004-09, Vol.51 (9), p.1409-1415

2004

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IEEE_Xplore

A Millisecond-Anneal-Assisted Selective Fully Silicided (FUSI) Gate Process

IEEE electron device letters, 2008-09, Vol.29 (9), p.998-1000

2008

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IEEE_Xplore

Short-Channel Double-Gate FETs with Atomically Precise Graphene Nanoribbons

2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.37.4.1-37.4.4

2021

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IEEE_Xplore

Interface induced uphill diffusion of boron: an effective approach for ultrashallow junction

IEEE electron device letters, 2001-02, Vol.22 (2), p.65-67

2001

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IEEE_Xplore

Cold CMOS as a Power-Performance-Reliability Booster for Advanced FinFETs

2020 IEEE Symposium on VLSI Technology, 2020, p.1-2

2020

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InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces

Applied physics letters, 2013-09, Vol.103 (14)

2013

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Expanding role of predictive TCAD in advanced technology development

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013, p.167-171

2013

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IEEE_Xplore

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An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III-V NMOS

High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates

Development of a third-generation biosensor to determine sterigmatocystin mycotoxin: An early warning system to detect aflatoxin B1

PCM-Based Analog Compute-In-Memory: Impact of Device Non-Idealities on Inference Accuracy

An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling

Uncertainties in projected impacts of climate change on European agriculture and terrestrial ecosystems based on scenarios from regional climate models

Growth of heterostructures on InAs for high mobility device applications

High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array

Seroprevalence against R. rickettsii, R. typhi and R. felis in human samples from prioritized rural areas in department of Cauca, Colombia

Pi-Gate SOI MOSFET

InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures

Exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design

Transistor-and Circuit-Design Optimization for Low-Power CMOS

CMOS technology for MS/RF SoC

Leakage scaling in deep submicron CMOS for SoC

Separation of channel backscattering coefficients in nanoscale MOSFETs

A Millisecond-Anneal-Assisted Selective Fully Silicided (FUSI) Gate Process

Short-Channel Double-Gate FETs with Atomically Precise Graphene Nanoribbons

Interface induced uphill diffusion of boron: an effective approach for ultrashallow junction

Cold CMOS as a Power-Performance-Reliability Booster for Advanced FinFETs

InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces

Expanding role of predictive TCAD in advanced technology development

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