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Effects of temperature on transition energies of GaAsSbN/GaAs single quantum wells

Journal of physics. Condensed matter, 2011-08, Vol.23 (32), p.325801-8

2011

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The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/AlxGa1−xAs quantum wells

Journal of physics. Condensed matter, 2008-06, Vol.20 (25), p.255246-255246 (9)

2008

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Effects of confinement on the electron–phonon interaction in Al0.18Ga0.82As/GaAs quantum wells

Journal of physics. Condensed matter, 2009-04, Vol.21 (15), p.155601-155601 (7)

2009

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Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice

Journal of physics. Condensed matter, 2007-02, Vol.19 (8), p.086207-086207 (12)

2007

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Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

Journal of luminescence, 2013-12, Vol.144, p.98-104

2013

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The influence of different indium-composition profiles on the electronic structure of lens-shaped InxGa1−xAs quantum dots

Journal of physics. D, Applied physics, 2012-06, Vol.45 (22)

2012

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Identification of the optically active vibrational modes in the photoluminescence of MEH-PPV films

The Journal of chemical physics, 2008-03, Vol.128 (9), p.094902-094902

2008

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Correlation between emission and structural properties of poly(p-phenylene vinylene) thin films

Synthetic metals, 2013-04, Vol.170, p.25-30

2013

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Annealing temperature effects on the azodye photoisomerization processes of layer-by-layer self-assembled poly(p-phenylenevinylene)/Congo red thin films

Journal of luminescence, 2013-02, Vol.134, p.842-846

2013

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Optically active vibrational modes in the photoluminescence line shape of BDMO-PPV films

Journal of luminescence, 2011-10, Vol.131 (10), p.2189-2194

2011

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Magnetophotoluminescence study of GaAs/AlGaAs coupled double quantum wells with bimodal heterointerface roughness

Journal of luminescence, 2012-05, Vol.132 (5), p.1183-1187

2012

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Optically active vibrational modes of PPV derivatives on textile substrate

Journal of luminescence, 2013-02, Vol.134, p.374-384

2013

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Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (100) and (311)A GaAs surfaces

Physica. B, Condensed matter, 2012-06, Vol.407 (12), p.2131-2135

2012

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Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Journal of applied physics, 2003-04, Vol.93 (8), p.4475-4479

2003

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Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder

Journal of luminescence, 2010-03, Vol.130 (3), p.460-465

2010

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Influence of TiO2 nanoparticles on the optical and structural properties of PPV thin films converted at low temperatures

Express polymer letters, 2013-08, Vol.7 (8), p.716-721

2013

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Correlation between luminescence properties of AlxGa1−xAs∕GaAs single quantum wells and barrier composition fluctuation

Journal of applied physics, 2007-06, Vol.101 (11)

2007

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Temperature dependence of optical transitions in AlGaAs

Journal of applied physics, 2001-06, Vol.89 (11), p.6159-6164

2001

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Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs

Brazilian journal of physics, 2004-06, Vol.34 (2a), p.517-525

2004

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Simulation of the electronic properties of InxGa1−xAs quantum dots and their wetting layer under the influence of indium segregation

Journal of applied physics, 2013-08, Vol.114 (8)

2013

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Optical and electrical characteristics of poly(3-alkylthiophene) and polydiphenylamine copolymers: Applications in light-emitting devices

Synthetic metals, 2012-12, Vol.162 (24), p.2433-2442

2012

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Analysis of optical properties of poly(3-methylthiophene) (P3MT) electrochemically synthesized

Synthetic metals, 2011-02, Vol.161 (3-4), p.340-347

2011

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The influence of different indium-composition profiles on the electronic structure of lens-shaped In x Ga 1−x As quantum dots

Journal of physics. D, Applied physics, 2012-06, Vol.45 (22), p.225104

2012

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GaNAsSb: how does it compare with other dilute III–V-nitride alloys?

Semiconductor science and technology, 2002-08, Vol.17 (8), p.778-784

2002

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Wet thermal oxidation of AlAsSb alloys lattice matched to InP

Journal of applied physics, 1997-06, Vol.81 (11), p.7600-7603

1997

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Effects of temperature on transition energies of GaAsSbN/GaAs single quantum wells

The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/AlxGa1−xAs quantum wells

Effects of confinement on the electron–phonon interaction in Al0.18Ga0.82As/GaAs quantum wells

Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice

Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

The influence of different indium-composition profiles on the electronic structure of lens-shaped InxGa1−xAs quantum dots

Identification of the optically active vibrational modes in the photoluminescence of MEH-PPV films

Correlation between emission and structural properties of poly(p-phenylene vinylene) thin films

Annealing temperature effects on the azodye photoisomerization processes of layer-by-layer self-assembled poly(p-phenylenevinylene)/Congo red thin films

Optically active vibrational modes in the photoluminescence line shape of BDMO-PPV films

Magnetophotoluminescence study of GaAs/AlGaAs coupled double quantum wells with bimodal heterointerface roughness

Optically active vibrational modes of PPV derivatives on textile substrate

Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (100) and (311)A GaAs surfaces

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder

Influence of TiO2 nanoparticles on the optical and structural properties of PPV thin films converted at low temperatures

Correlation between luminescence properties of AlxGa1−xAs∕GaAs single quantum wells and barrier composition fluctuation

Temperature dependence of optical transitions in AlGaAs

Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs

Simulation of the electronic properties of InxGa1−xAs quantum dots and their wetting layer under the influence of indium segregation

Optical and electrical characteristics of poly(3-alkylthiophene) and polydiphenylamine copolymers: Applications in light-emitting devices

Analysis of optical properties of poly(3-methylthiophene) (P3MT) electrochemically synthesized

The influence of different indium-composition profiles on the electronic structure of lens-shaped In x Ga 1−x As quantum dots

GaNAsSb: how does it compare with other dilute III–V-nitride alloys?

Wet thermal oxidation of AlAsSb alloys lattice matched to InP

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