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Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions

Applied physics letters, 2019-03, Vol.114 (11)

2019

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THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures

Applied physics letters, 2021-03, Vol.118 (10)

2021

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Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study

Nanophotonics (Berlin, Germany), 2024-04, Vol.13 (10), p.1781-1791

2024

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High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz

Nanophotonics (Berlin, Germany), 2024-04, Vol.13 (10), p.1793-1802

2024

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THz intersubband absorption in n-type Si1−xGex parabolic quantum wells

Applied physics letters, 2021-04, Vol.118 (16)

2021

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Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells

Crystals (Basel), 2020-03, Vol.10 (3), p.179

2020

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Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models

Photonics, 2020-03, Vol.7 (1), p.2

2020

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Submicron Size Schottky Junctions on As-Grown Monolayer Epitaxial Graphene on Ge(100): A Low-Invasive Scanned-Probe-Based Study

ACS applied materials & interfaces, 2019-09, Vol.11 (38), p.35079-35087

2019

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Physical mechanisms of intersubband-absorption linewidth broadening in s -Ge/SiGe quantum wells

Physical review. B, Condensed matter and materials physics, 2014-10, Vol.90 (15), Article 155420

2014

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Tuning the Doping of Epitaxial Graphene on a Conventional Semiconductor via Substrate Surface Reconstruction

The journal of physical chemistry letters, 2021-02, Vol.12 (4), p.1262-1267

2021

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THz intersubband absorption in n-type Si1− x Ge x parabolic quantum wells

Applied physics letters, 2021-04, Vol.118 (16)

2021

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Terahertz absorption-saturation and emission from electron-doped germanium quantum wells

Optics express, 2020-03, Vol.28 (5), p.7245-7258

2020

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Photoluminescence from GeSn nano-heterostructures

Nanotechnology, 2018-10, Vol.29 (41), p.415702-415702

2018

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Ultrastrong Coupling of Si 1– x Ge x Parabolic Quantum Wells to Terahertz Microcavities

ACS photonics, 2024-07, Vol.11 (7), p.2776-2786

2024

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Ultrastrong Coupling of Si1–x Ge x Parabolic Quantum Wells to Terahertz Microcavities

ACS photonics, 2024-07, Vol.11 (7), p.2776-2786

2024

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Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading

Physical review materials, 2020-10, Vol.4 (10), Article 103403

2020

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Doped silicon and NIS junctions for bolometer applications

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2004-03, Vol.520 (1-3), p.44-47

2004

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Subnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick Ge / Si - Ge Quantum Cascade Structures

Physical review applied, 2023-01, Vol.19 (1), Article 014011

2023

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Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains

Physical review. B, 2020-06, Vol.101 (24), p.1, Article 245302

2020

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Electron Dynamics in Silicon–Germanium Terahertz Quantum Fountain Structures

ACS photonics, 2016-03, Vol.3 (3), p.403-414

2016

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Dynamics of crosshatch patterns in heteroepitaxy

Physical review. B, 2019-08, Vol.100 (8), p.1, Article 085307

2019

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Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back

Physical review applied, 2018-11, Vol.10 (5), Article 054067

2018

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Sub-micron size Schottky junctions on as-grown monolayer epitaxial graphene on Ge(100): a low-invasive scanned-probe based study

ACS applied materials & interfaces, 2019-09

2019

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THz Intersubband Emitter based on Silicon

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-1

2021

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Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy

Journal of Optics, 2014-09, Vol.16 (9), p.94010-7

2014

Volltextzugriff (PDF)

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Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions

THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures

Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study

High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz

THz intersubband absorption in n-type Si1−xGex parabolic quantum wells

Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells

Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models

Submicron Size Schottky Junctions on As-Grown Monolayer Epitaxial Graphene on Ge(100): A Low-Invasive Scanned-Probe-Based Study

Physical mechanisms of intersubband-absorption linewidth broadening in s -Ge/SiGe quantum wells

Tuning the Doping of Epitaxial Graphene on a Conventional Semiconductor via Substrate Surface Reconstruction

THz intersubband absorption in n-type Si1− x Ge x parabolic quantum wells

Terahertz absorption-saturation and emission from electron-doped germanium quantum wells

Photoluminescence from GeSn nano-heterostructures

Ultrastrong Coupling of Si 1– x Ge x Parabolic Quantum Wells to Terahertz Microcavities

Ultrastrong Coupling of Si1–x Ge x Parabolic Quantum Wells to Terahertz Microcavities

Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading

Doped silicon and NIS junctions for bolometer applications

Subnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick Ge / Si - Ge Quantum Cascade Structures

Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains

Electron Dynamics in Silicon–Germanium Terahertz Quantum Fountain Structures

Dynamics of crosshatch patterns in heteroepitaxy

Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back

Sub-micron size Schottky junctions on as-grown monolayer epitaxial graphene on Ge(100): a low-invasive scanned-probe based study

THz Intersubband Emitter based on Silicon

Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy

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