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Silicon carbide: A unique platform for metal-oxide-semiconductor physics

Applied physics reviews, 2015-06, Vol.2 (2)

2015

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Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

Journal of applied physics, 2016-03, Vol.119 (10)

2016

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High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors

Journal of applied physics, 2021-12, Vol.130 (22)

2021

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High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

Applied physics letters, 2014-11, Vol.105 (18)

2014

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Thermal characterization of gallium oxide Schottky barrier diodes

Review of scientific instruments, 2018-11, Vol.89 (11)

2018

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Tuning the threshold voltage from depletion to enhancement mode in a multilayer MoS2 transistor via oxygen adsorption and desorption

Physical chemistry chemical physics : PCCP, 2016-01, Vol.18 (2), p.685-689

2016

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High conductivity β-Ga2O3 formed by hot Si ion implantation

Applied physics letters, 2022-12, Vol.121 (26)

2022

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Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing

Journal of applied physics, 2023-06, Vol.133 (21)

2023

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Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

Journal of applied physics, 2009-06, Vol.105 (12)

2009

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Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

Materials, 2022-09, Vol.15 (19), p.6736

2022

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Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Applied physics letters, 2015-04, Vol.106 (14)

2015

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Analytical electron microscopy of ( 2 ¯ 01) β-Ga2O3/SiO2 and ( 2 ¯ 01) β-Ga2O3/Al2O3 interface structures in MOS capacitors

Journal of applied physics, 2021-05, Vol.129 (19)

2021

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Enhanced Inversion Mobility on 4H-SiC (\hbox\overline} \hbox) Using Phosphorus and Nitrogen Interface Passivation

IEEE electron device letters, 2013-02, Vol.34 (2), p.181-183

2013

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Chemical Properties of Oxidized Silicon Carbide Surfaces upon Etching in Hydrofluoric Acid

Journal of the American Chemical Society, 2009-11, Vol.131 (46), p.16808-16813

2009

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High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

IEEE electron device letters, 2014-09, Vol.35 (9), p.894-896

2014

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Analysis of the electronic and chemical structure in boron and phosphorus passivated 4H-SiC/SiO2 interfaces using HRTEM and STEM-EELS

Applied physics letters, 2018-11, Vol.113 (19)

2018

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Mechano-Immunomodulation in Space: Mechanisms Involving Microgravity-Induced Changes in T Cells

Life (Basel, Switzerland), 2021-10, Vol.11 (10), p.1043

2021

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Effects of antimony (Sb) on electron trapping near SiO2/4H-SiC interfaces

Journal of applied physics, 2016-07, Vol.120 (3)

2016

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Chitosan solid electrolyte as electric double layer in multilayer MoS2 transistor for low-voltage operation

Physica status solidi. A, Applications and materials science, 2015-10, Vol.212 (10), p.2219-2225

2015

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High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

Applied physics letters, 2009-10, Vol.95 (15)

2009

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Pressure dependence of SiO2 growth kinetics and electrical properties on SiC

Journal of applied physics, 2008-01, Vol.103 (2)

2008

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A Study on Pre-Oxidation Nitrogen Implantation for the Improvement of Channel Mobility in 4H-SiC MOSFETs

IEEE transactions on electron devices, 2010-06, Vol.57 (6), p.1195-1200

2010

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Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2014-11, Vol.32 (6)

2014

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Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery

Applied surface science, 2015-01, Vol.324, p.30-34

2015

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Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

Applied physics letters, 2014-11, Vol.105 (19)

2014

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Silicon carbide: A unique platform for metal-oxide-semiconductor physics

Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors

High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

Thermal characterization of gallium oxide Schottky barrier diodes

Tuning the threshold voltage from depletion to enhancement mode in a multilayer MoS2 transistor via oxygen adsorption and desorption

High conductivity β-Ga2O3 formed by hot Si ion implantation

Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Analytical electron microscopy of ( 2 ¯ 01) β-Ga2O3/SiO2 and ( 2 ¯ 01) β-Ga2O3/Al2O3 interface structures in MOS capacitors

Enhanced Inversion Mobility on 4H-SiC (\hbox\overline} \hbox) Using Phosphorus and Nitrogen Interface Passivation

Chemical Properties of Oxidized Silicon Carbide Surfaces upon Etching in Hydrofluoric Acid

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

Analysis of the electronic and chemical structure in boron and phosphorus passivated 4H-SiC/SiO2 interfaces using HRTEM and STEM-EELS

Mechano-Immunomodulation in Space: Mechanisms Involving Microgravity-Induced Changes in T Cells

Effects of antimony (Sb) on electron trapping near SiO2/4H-SiC interfaces

Chitosan solid electrolyte as electric double layer in multilayer MoS2 transistor for low-voltage operation

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

Pressure dependence of SiO2 growth kinetics and electrical properties on SiC

A Study on Pre-Oxidation Nitrogen Implantation for the Improvement of Channel Mobility in 4H-SiC MOSFETs

Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers

Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery

Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

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