UB Paderborn / Katalog / Suche / in CDI

Electronic and transport properties of Li-doped NiO epitaxial thin films

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (9), p.2275-2282

2018

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The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

Applied physics letters, 2017-03, Vol.110 (10)

2017

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Templated Quasicrystalline Molecular Ordering

Nano letters, 2014-03, Vol.14 (3), p.1184-1189

2014

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Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures

Applied physics letters, 2018-01, Vol.112 (1)

2018

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Electron beam evaporation of superconductor-ferromagnet heterostructures

Scientific reports, 2022-05, Vol.12 (1), p.7786-7786, Article 7786

2022

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Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

Applied physics letters, 2017-08, Vol.111 (9)

2017

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In situ formation of onion-like carbon from the evaporation of ultra-dispersed nanodiamonds

Carbon (New York), 2013-02, Vol.52, p.145-149

2013

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Templated three-dimensional growth of quasicrystalline lead

Nature communications, 2013, Vol.4 (1), p.2715-2715, Article 2715

2013

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Crystalline and quasicrystalline allotropes of Pb formed on the fivefold surface of icosahedral Ag-In-Yb

The Journal of chemical physics, 2014-05, Vol.140 (17), p.174710-174710

2014

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The evolution of the electronic structure at the Bi/Ag(111) interface studied using photoemission spectroscopy

Journal of physics. Condensed matter, 2012-10, Vol.24 (43), p.435502-435502

2012

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Electron affinity of metal oxide thin films of TiO2, ZnO, and NiO and their applicability in 28.3 THz rectenna devices

Journal of applied physics, 2023-08, Vol.134 (8)

2023

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High yield synthesis of amine functionalized graphene oxide and its surface properties

RSC advances, 2016-01, Vol.6 (72), p.67916-67924

2016

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Surface structure of In2O3(111) (1×1) determined by density functional theory calculations and low energy electron diffraction

Surface science, 2012, Vol.606 (1-2), p.1-6

2012

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The local adsorption structure of methylthiolate and butylthiolate on Au(1 1 1): A photoemission core-level shift investigation

Surface science, 2010-01, Vol.604 (2), p.227-234

2010

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Initial and final state effects in photoemission from Au nanoclusters on TiO2(1 1 0)

Surface science, 2002-10, Vol.518 (3), p.210-224

2002

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A photoelectron spectroscopy study of ion-irradiation induced defects in single-wall carbon nanotubes

Carbon (New York), 2007-11, Vol.45 (14), p.2744-2750

2007

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On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks

Journal of applied physics, 2012-08, Vol.112 (4), p.044102

2012

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The Structure of Atomic Sulfur Phases on Au(111)

Journal of physical chemistry. C, 2007-07, Vol.111 (29), p.10904-10914

2007

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Impact of AlO y Interfacial Layer on Resistive Switching Performance of Flexible HfO ₓ /AlO y ReRAMs

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.3787-3793

2021

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LEED I-V and DFT structure determination of the (√3 x √3)R30° Pb-Ag(111) surface alloy

Journal of physics. Condensed matter, 2011-07, Vol.23 (26), p.265006-6

2011

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The local adsorption site of methylthiolate on Au(1 1 1): Bridge or atop?

Surface science, 2009-03, Vol.603 (5), p.807-813

2009

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Structure and reactivity of Bi allotropes on the fivefold icosahedral Al–Pd–Mn quasicrystal surface

Journal of physics. Condensed matter, 2010-09, Vol.22 (34), p.345002-345002

2010

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Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level

APL materials, 2019-02, Vol.7 (2), p.022528-022528-8

2019

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Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfOx buffer layer

Journal of materials science. Materials in electronics, 2021-02, Vol.32 (3), p.2936-2945

2021

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Improved resistive switching characteristics of Ag/Al:HfO x /ITO/PET ReRAM for flexible electronics application

Semiconductor science and technology, 2021-06, Vol.36 (6), p.65006

2021

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Electronic and transport properties of Li-doped NiO epitaxial thin films

The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

Templated Quasicrystalline Molecular Ordering

Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures

Electron beam evaporation of superconductor-ferromagnet heterostructures

Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

In situ formation of onion-like carbon from the evaporation of ultra-dispersed nanodiamonds

Templated three-dimensional growth of quasicrystalline lead

Crystalline and quasicrystalline allotropes of Pb formed on the fivefold surface of icosahedral Ag-In-Yb

The evolution of the electronic structure at the Bi/Ag(111) interface studied using photoemission spectroscopy

Electron affinity of metal oxide thin films of TiO2, ZnO, and NiO and their applicability in 28.3 THz rectenna devices

High yield synthesis of amine functionalized graphene oxide and its surface properties

Surface structure of In2O3(111) (1×1) determined by density functional theory calculations and low energy electron diffraction

The local adsorption structure of methylthiolate and butylthiolate on Au(1 1 1): A photoemission core-level shift investigation

Initial and final state effects in photoemission from Au nanoclusters on TiO2(1 1 0)

A photoelectron spectroscopy study of ion-irradiation induced defects in single-wall carbon nanotubes

On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks

The Structure of Atomic Sulfur Phases on Au(111)

Impact of AlO y Interfacial Layer on Resistive Switching Performance of Flexible HfO ₓ /AlO y ReRAMs

LEED I-V and DFT structure determination of the (√3 x √3)R30° Pb-Ag(111) surface alloy

The local adsorption site of methylthiolate on Au(1 1 1): Bridge or atop?

Structure and reactivity of Bi allotropes on the fivefold icosahedral Al–Pd–Mn quasicrystal surface

Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level

Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfOx buffer layer

Improved resistive switching characteristics of Ag/Al:HfO x /ITO/PET ReRAM for flexible electronics application

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