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Electronic and transport properties of Li-doped NiO epitaxial thin films

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (9), p.2275-2282

2018

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The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

Applied physics letters, 2017-03, Vol.110 (10)

2017

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Electron affinity of metal oxide thin films of TiO2, ZnO, and NiO and their applicability in 28.3 THz rectenna devices

Journal of applied physics, 2023-08, Vol.134 (8)

2023

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High yield synthesis of amine functionalized graphene oxide and its surface properties

RSC advances, 2016-01, Vol.6 (72), p.67916-67924

2016

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Templated Quasicrystalline Molecular Ordering

Nano letters, 2014-03, Vol.14 (3), p.1184-1189

2014

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Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures

Applied physics letters, 2018-01, Vol.112 (1)

2018

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True nature of an archetypal self-assembly system: mobile Au-thiolate species on Au(111)

Physical review letters, 2006-10, Vol.97 (16), p.166102-166102, Article 166102

2006

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Electron beam evaporation of superconductor-ferromagnet heterostructures

Scientific reports, 2022-05, Vol.12 (1), p.7786-7786, Article 7786

2022

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Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

Applied physics letters, 2017-08, Vol.111 (9)

2017

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Impact of AlO y Interfacial Layer on Resistive Switching Performance of Flexible HfO ₓ /AlO y ReRAMs

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.3787-3793

2021

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Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfOx buffer layer

Journal of materials science. Materials in electronics, 2021-02, Vol.32 (3), p.2936-2945

2021

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Improved resistive switching characteristics of Ag/Al:HfO x /ITO/PET ReRAM for flexible electronics application

Semiconductor science and technology, 2021-06, Vol.36 (6), p.65006

2021

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Effect of Aluminum Doping on Performance of HfO ₓ -Based Flexible Resistive Memory Devices

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4222-4227

2020

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In situ formation of onion-like carbon from the evaporation of ultra-dispersed nanodiamonds

Carbon (New York), 2013-02, Vol.52, p.145-149

2013

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Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Band alignments of sputtered dielectrics on GaN

Journal of physics. D, Applied physics, 2020-02, Vol.53 (7), p.75303

2020

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Dibromobianthryl ordering and polymerization on Ag(100)

The Journal of chemical physics, 2017-05, Vol.146 (18)

2017

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Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Journal of crystal growth, 2019-12, Vol.528, p.125254, Article 125254

2019

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Templated three-dimensional growth of quasicrystalline lead

Nature communications, 2013, Vol.4 (1), p.2715-2715, Article 2715

2013

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Atomic layer deposition of Nb-doped ZnO for thin film transistors

Applied physics letters, 2016-11, Vol.109 (22)

2016

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Tunable crystal structure of Cu2SnS3 deposited by spray pyrolysis and its impact on the chemistry and electronic structure

Journal of alloys and compounds, 2021-11, Vol.881, p.160552, Article 160552

2021

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P3HT as a pinhole blocking back contact for CdTe thin film solar cells

Solar energy materials and solar cells, 2017-12, Vol.172, p.1-10

2017

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Local methylthiolate adsorption geometry on Au(111) from photoemission core-level shifts

Physical review letters, 2009-03, Vol.102 (12), p.126101-126101, Article 126101

2009

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The evolution of the electronic structure at the Bi/Ag(111) interface studied using photoemission spectroscopy

Journal of physics. Condensed matter, 2012-10, Vol.24 (43), p.435502-435502

2012

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Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level

APL materials, 2019-02, Vol.7 (2), p.022528-022528-8

2019

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Electronic and transport properties of Li-doped NiO epitaxial thin films

The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

Electron affinity of metal oxide thin films of TiO2, ZnO, and NiO and their applicability in 28.3 THz rectenna devices

High yield synthesis of amine functionalized graphene oxide and its surface properties

Templated Quasicrystalline Molecular Ordering

Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures

True nature of an archetypal self-assembly system: mobile Au-thiolate species on Au(111)

Electron beam evaporation of superconductor-ferromagnet heterostructures

Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

Impact of AlO y Interfacial Layer on Resistive Switching Performance of Flexible HfO ₓ /AlO y ReRAMs

Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfOx buffer layer

Improved resistive switching characteristics of Ag/Al:HfO x /ITO/PET ReRAM for flexible electronics application

Effect of Aluminum Doping on Performance of HfO ₓ -Based Flexible Resistive Memory Devices

In situ formation of onion-like carbon from the evaporation of ultra-dispersed nanodiamonds

Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature

Band alignments of sputtered dielectrics on GaN

Dibromobianthryl ordering and polymerization on Ag(100)

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Templated three-dimensional growth of quasicrystalline lead

Atomic layer deposition of Nb-doped ZnO for thin film transistors

Tunable crystal structure of Cu2SnS3 deposited by spray pyrolysis and its impact on the chemistry and electronic structure

P3HT as a pinhole blocking back contact for CdTe thin film solar cells

Local methylthiolate adsorption geometry on Au(111) from photoemission core-level shifts

The evolution of the electronic structure at the Bi/Ag(111) interface studied using photoemission spectroscopy

Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level

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