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Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor

Chemistry of materials, 2017-02, Vol.29 (3), p.1107-1115

2017

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Synthesis of Micron-Sized WS2 Crystallites Using Atomic Layer Deposition and Sulfur Annealing

Chemistry of materials, 2023-06, Vol.35 (12), p.4649-4659

2023

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Self-Catalyzed, Low-Temperature Atomic Layer Deposition of Ruthenium Metal Using Zero-Valent Ru(DMBD)(CO)3 and Water

Chemistry of materials, 2019-02, Vol.31 (4), p.1304-1317

2019

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Atomic Layer Deposition of Transparent p‑Type Semiconducting Nickel Oxide Using Ni( tBu2DAD)2 and Ozone

ACS applied materials & interfaces, 2019-08, Vol.11 (33), p.30437-30445

2019

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Role of Initial Precursor Chemisorption on Incubation Delay for Molybdenum Oxide Atomic Layer Deposition

Chemistry of materials, 2016-12, Vol.28 (23), p.8591-8597

2016

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Substrate selectivity in the low temperature atomic layer deposition of cobalt metal films from bis(1,4-di-tert-butyl-1,3-diazadienyl)cobalt and formic acid

The Journal of chemical physics, 2017-02, Vol.146 (5), p.052813-052813

2017

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Synthesis of Micron-Sized WS 2 Crystallites Using Atomic Layer Deposition and Sulfur Annealing

Chemistry of materials, 2023-06, Vol.35 (12), p.4649-4659

2023

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Selective Atomic Layer Deposition Mechanism for Titanium Dioxide Films with (EtCp)Ti(NMe2)3: Ozone versus Water

Chemistry of materials, 2018-02, Vol.30 (3), p.970-981

2018

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Improved properties of atomic layer deposited ruthenium via postdeposition annealing

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-09, Vol.39 (5)

2021

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Correction to Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero Oxidation State Precursor

Chemistry of materials, 2018-12, Vol.30 (24), p.8983-8984

2018

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Reaction Mechanisms of the Atomic Layer Deposition of Tin Oxide Thin Films Using Tributyltin Ethoxide and Ozone

Langmuir, 2017-06, Vol.33 (24), p.5998-6004

2017

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Plasma-enhanced atomic layer deposition of WO3-SiO2 films using a heteronuclear precursor

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-01, Vol.41 (1)

2023

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The Atomic Layer Deposition of HfO2 and ZrO2 using Advanced Metallocene Precursors and H2O as the Oxygen Source

Chemical vapor deposition, 2008-11, Vol.14 (11-12), p.358-365

2008

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Properties of Annealed Atomic-Layer-Deposited Ruthenium from Ru(DMBD)(CO) 3 and Oxygen

ECS transactions, 2018, Vol.85 (13), p.743-749

2018

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Atomic Layer Deposition of Ga2O3 Films from a Dialkylamido-Based Precursor

Chemistry of materials, 2006-01, Vol.18 (2), p.471-475

2006

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A Pyrazolate-Based Metalorganic Tantalum Precursor That Exhibits High Thermal Stability and Its Use in the Atomic Layer Deposition of Ta2O5

Journal of the American Chemical Society, 2007-10, Vol.129 (41), p.12370-12371

2007

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Synthesis, structure and properties of volatile lanthanide complexes containing amidinate ligands : application for Er2O3 thin film growth by atomic layer deposition

Journal of materials chemistry, 2005-01, Vol.15 (39), p.4224-4233

2005

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Mechanistic study of the atomic layer deposition of scandium oxide films using Sc(MeCp)2(Me2pz) and ozone

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2019-01, Vol.37 (1)

2019

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Atomic Layer Deposition of Tungsten(III) Oxide Thin Films from W 2 (NMe 2 ) 6 and Water: Precursor-Based Control of Oxidation State in the Thin Film Material

Journal of the American Chemical Society, 2006-08, Vol.128 (30), p.9638-9639

2006

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A pyrazolate-based metalorganic tantalum precursor that exhibits high thermal stability and its use in the atomic layer deposition of ta(2)o(5)

Journal of the American Chemical Society, 2007-10, Vol.129 (41), p.12370-12371

2007

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Atomic Layer Deposition of Tungsten(III) Oxide Thin Films from W2(NMe2)6 and Water: Precursor-Based Control of Oxidation State in the Thin Film Material

Journal of the American Chemical Society, 2006-08, Vol.128 (30), p.9638-9639

2006

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A low valent metalorganic precursor for the growth of tungsten nitride thin films by atomic layer deposition

Journal of materials chemistry, 2007-01, Vol.17 (11), p.1109-1116

2007

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Atomic Layer Deposition of Ga 2 O 3 Films from a Dialkylamido-Based Precursor

Chemistry of materials, 2006-01, Vol.18 (2), p.471-475

2006

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A Pyrazolate-Based Metalorganic Tantalum Precursor That Exhibits High Thermal Stability and Its Use in the Atomic Layer Deposition of Ta 2 O 5

Journal of the American Chemical Society, 2007-10, Vol.129 (41), p.12370-12371

2007

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Advanced cyclopentadienyl precursors for atomic layer deposition of ZrO2 thin films

Journal of materials chemistry, 2008-01, Vol.18 (28), p.3385-3390

2008

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Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor

Synthesis of Micron-Sized WS2 Crystallites Using Atomic Layer Deposition and Sulfur Annealing

Self-Catalyzed, Low-Temperature Atomic Layer Deposition of Ruthenium Metal Using Zero-Valent Ru(DMBD)(CO)3 and Water

Atomic Layer Deposition of Transparent p‑Type Semiconducting Nickel Oxide Using Ni( tBu2DAD)2 and Ozone

Role of Initial Precursor Chemisorption on Incubation Delay for Molybdenum Oxide Atomic Layer Deposition

Substrate selectivity in the low temperature atomic layer deposition of cobalt metal films from bis(1,4-di-tert-butyl-1,3-diazadienyl)cobalt and formic acid

Synthesis of Micron-Sized WS 2 Crystallites Using Atomic Layer Deposition and Sulfur Annealing

Selective Atomic Layer Deposition Mechanism for Titanium Dioxide Films with (EtCp)Ti(NMe2)3: Ozone versus Water

Improved properties of atomic layer deposited ruthenium via postdeposition annealing

Correction to Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero Oxidation State Precursor

Reaction Mechanisms of the Atomic Layer Deposition of Tin Oxide Thin Films Using Tributyltin Ethoxide and Ozone

Plasma-enhanced atomic layer deposition of WO3-SiO2 films using a heteronuclear precursor

The Atomic Layer Deposition of HfO2 and ZrO2 using Advanced Metallocene Precursors and H2O as the Oxygen Source

Properties of Annealed Atomic-Layer-Deposited Ruthenium from Ru(DMBD)(CO) 3 and Oxygen

Atomic Layer Deposition of Ga2O3 Films from a Dialkylamido-Based Precursor

A Pyrazolate-Based Metalorganic Tantalum Precursor That Exhibits High Thermal Stability and Its Use in the Atomic Layer Deposition of Ta2O5

Synthesis, structure and properties of volatile lanthanide complexes containing amidinate ligands : application for Er2O3 thin film growth by atomic layer deposition

Mechanistic study of the atomic layer deposition of scandium oxide films using Sc(MeCp)2(Me2pz) and ozone

Atomic Layer Deposition of Tungsten(III) Oxide Thin Films from W 2 (NMe 2 ) 6 and Water: Precursor-Based Control of Oxidation State in the Thin Film Material

A pyrazolate-based metalorganic tantalum precursor that exhibits high thermal stability and its use in the atomic layer deposition of ta(2)o(5)

Atomic Layer Deposition of Tungsten(III) Oxide Thin Films from W2(NMe2)6 and Water: Precursor-Based Control of Oxidation State in the Thin Film Material

A low valent metalorganic precursor for the growth of tungsten nitride thin films by atomic layer deposition

Atomic Layer Deposition of Ga 2 O 3 Films from a Dialkylamido-Based Precursor

A Pyrazolate-Based Metalorganic Tantalum Precursor That Exhibits High Thermal Stability and Its Use in the Atomic Layer Deposition of Ta 2 O 5

Advanced cyclopentadienyl precursors for atomic layer deposition of ZrO2 thin films

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