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Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2.2 μm

Electronics letters, 1989, Vol.25 (9), p.568

1989

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Temperature dependence of InGaAsP double-heterostructure laser characteristics

Electronics letters, 1979-01, Vol.15 (21), p.695

1979

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Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver

Electronics letters, 1980, Vol.16 (10), p.353

1980

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IIA-5 minority carrier velocity field characteristics for lightly doped p-In 0.53 Ga 0.47 As photoconductive detectors

IEEE transactions on electron devices, 1981-10, Vol.28 (10), p.1212-1213

1981

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Performance of an improved InGaAsP ridge waveguide laser at 1.3 μm

Electronics letters, 1981-04, Vol.17 (9), p.318

1981

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IV-5 Efficient LPE-grown In x Ga 1-x As LED's and laser diodes at 0.9- to 1.1-µm wavelengths

IEEE transactions on electron devices, 1974-11, Vol.21 (11), p.741-742

1974

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IV-5 Efficient LPE-grown InxGa1-xAs LED's and laser diodes at 0.9- to 1.1-µm wavelengths

IEEE transactions on electron devices, 1974-11, Vol.21 (11), p.741-742

1974

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Erratum: Single-mode c.w. ridge-waveguide laser emitting at 1.55 μm

Electronics letters, 1980, Vol.16 (2), p.75

1980

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Low threshold ridge waveguide laser at 1.55 μm

Electronics letters, 1983, Vol.19 (21), p.877-879

1983

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An In0.53Ga0.47As junction field-effect transistor

IEEE electron device letters, 1980-01, Vol.1 (6), p.110-111

1980

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A long-wavelength, annular In 0.53 Ga 0.47 As p-i-n photodetector

IEEE electron device letters, 1982-12, Vol.3 (12), p.415-417

1982

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A long-wavelength, annular In0.53Ga0.47As p-i-n photodetector

IEEE electron device letters, 1982-01, Vol.3 (12), p.415-417

1982

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Single-mode c.w. ridge-waveguide laser emitting at 1.55 μm

Electronics letters, 1979, Vol.15 (23), p.763

1979

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An In 0.53 Ga 0.47 As p-channel MOSFET with plasma-grown native oxide insulated gate

IEEE electron device letters, 1982-06, Vol.3 (6), p.158-160

1982

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IIA-5 efficient GaAs1-xSbx/AlyGa1-yAs1-xSbxdouble heterostructure LEDs in the 1-µm wavelength region

IEEE transactions on electron devices, 1975-11, Vol.22 (11), p.1057-1057

1975

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IIA-5 efficient GaAs 1-x Sb x /Al y Ga 1-y As 1-x Sb x double heterostructure LEDs in the 1-µm wavelength region

IEEE transactions on electron devices, 1975-11, Vol.22 (11), p.1057-1057

1975

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TP-C5 the wavelength dependence of InGaAsP laser threshold characteristics

IEEE transactions on electron devices, 1979-11, Vol.26 (11), p.1843-1843

1979

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TA-B4 In 0.53 Ga 0.47 As integrated PIN/FET photo receiver

IEEE transactions on electron devices, 1980-11, Vol.27 (11), p.2186-2187

1980

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IIA-5 minority carrier velocity field characteristics for lightly doped p-In0.53Ga0.47As photoconductive detectors

IEEE transactions on electron devices, 1981-10, Vol.28 (10), p.1212-1213

1981

Volltextzugriff (PDF)

An In 0.53 Ga 0.47 As junction field-effect transistor

IEEE electron device letters, 1980-06, Vol.1 (6), p.110-111

1980

Volltextzugriff (PDF)

An In0.53Ga0.47As p-channel MOSFET with plasma-grown native oxide insulated gate

IEEE electron device letters, 1982-06, Vol.3 (6), p.158-160

1982

Volltextzugriff (PDF)

TA-B4 In0.53Ga0.47As integrated PIN/FET photo receiver

IEEE transactions on electron devices, 1980-11, Vol.27 (11), p.2186-2187

1980

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Stimulated emission and the type of bandgap in GaSe

Solid state communications, 1971-07, Vol.9 (13), p.1107-1111

1971

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An integrated PIN/JFET photoreceiver for long wavelength optical systems

1981 International Electron Devices Meeting, 1981, p.276-279

1981

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In0.53Ga0.47As/Si3N4n-channel and p-channel inversion mode MISFET's

1981 International Electron Devices Meeting, 1981, p.637-640

1981

Volltextzugriff (PDF)

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Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2.2 μm

Temperature dependence of InGaAsP double-heterostructure laser characteristics

Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver

IIA-5 minority carrier velocity field characteristics for lightly doped p-In 0.53 Ga 0.47 As photoconductive detectors

Performance of an improved InGaAsP ridge waveguide laser at 1.3 μm

IV-5 Efficient LPE-grown In x Ga 1-x As LED's and laser diodes at 0.9- to 1.1-µm wavelengths

IV-5 Efficient LPE-grown InxGa1-xAs LED's and laser diodes at 0.9- to 1.1-µm wavelengths

Erratum: Single-mode c.w. ridge-waveguide laser emitting at 1.55 μm

Low threshold ridge waveguide laser at 1.55 μm

An In0.53Ga0.47As junction field-effect transistor

A long-wavelength, annular In 0.53 Ga 0.47 As p-i-n photodetector

A long-wavelength, annular In0.53Ga0.47As p-i-n photodetector

Single-mode c.w. ridge-waveguide laser emitting at 1.55 μm

An In 0.53 Ga 0.47 As p-channel MOSFET with plasma-grown native oxide insulated gate

IIA-5 efficient GaAs1-xSbx/AlyGa1-yAs1-xSbxdouble heterostructure LEDs in the 1-µm wavelength region

IIA-5 efficient GaAs 1-x Sb x /Al y Ga 1-y As 1-x Sb x double heterostructure LEDs in the 1-µm wavelength region

TP-C5 the wavelength dependence of InGaAsP laser threshold characteristics

TA-B4 In 0.53 Ga 0.47 As integrated PIN/FET photo receiver

IIA-5 minority carrier velocity field characteristics for lightly doped p-In0.53Ga0.47As photoconductive detectors

An In 0.53 Ga 0.47 As junction field-effect transistor

An In0.53Ga0.47As p-channel MOSFET with plasma-grown native oxide insulated gate

TA-B4 In0.53Ga0.47As integrated PIN/FET photo receiver

Stimulated emission and the type of bandgap in GaSe

An integrated PIN/JFET photoreceiver for long wavelength optical systems

In0.53Ga0.47As/Si3N4n-channel and p-channel inversion mode MISFET's

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