UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Dark Currents in a Fully-Depleted LWIR HgCdTe P-on-n Heterojunction: Analytical and Numerical Simulations

Journal of electronic materials, 2017-11, Vol.46 (11), p.6295-6305

2017

Volltextzugriff (PDF)

Junction optimization in HgCdTe: Shockley-Read-Hall generation-recombination suppression

Applied physics letters, 2015-07, Vol.107 (2)

2015

Volltextzugriff (PDF)

Numerical Device Modeling, Analysis, and Optimization of Extended-SWIR HgCdTe Infrared Detectors

Journal of electronic materials, 2016-09, Vol.45 (9), p.4654-4662

2016

Volltextzugriff (PDF)

Mid-wavelength infrared p-on-n Hg1-xCdxTe heterostructure detectors: 30-120 kelvin state-of-the-art performance

Journal of electronic materials, 2003-07, Vol.32 (7), p.803-809

2003

Volltextzugriff (PDF)

Planar p-on-n HgCdTe heterostructure photovoltaic detectors

Applied physics letters, 1993-03, Vol.62 (9), p.976-978

1993

Volltextzugriff (PDF)

1/f noise in large-area Hg1-xCdxTe photodiodes

Journal of electronic materials, 2003-07, Vol.32 (7), p.633-638

2003

Volltextzugriff (PDF)

Excess tunnel currents in AlGaAs/GaAs multiple quantum well infrared detectors

Applied physics letters, 1992-03, Vol.60 (11), p.1324-1326

1992

Volltextzugriff (PDF)

Advances in large-area Hg1-xCdxTe photovoltaic detectors for remote-sensing applications

Journal of electronic materials, 2002-07, Vol.31 (7), p.726-731

2002

Volltextzugriff (PDF)

1/f noise in very-long-wavelength infrared Hg1-xCdxTe detectors

Journal of electronic materials, 2002-07, Vol.31 (7), p.699-704

2002

Volltextzugriff (PDF)

Current mechanisms in VLWIR Hg1-xCdxTe photodiodes

Journal of electronic materials, 2001-06, Vol.30 (6), p.585-589

2001

Volltextzugriff (PDF)

Large VLWIR Hg1−xCdxTe photovoltaic detectors

Journal of electronic materials, 2000-06, Vol.29 (6), p.630-635

2000

Volltextzugriff (PDF)

Measurement of minority carrier lifetime in n-type MBE HgCdTe and its dependence on annealing

Journal of electronic materials, 1998-06, Vol.27 (6), p.698-702

1998

Volltextzugriff (PDF)

Effect of the dislocation density on minority-carrier lifetime on molecular beam epitaxial HgCdTe

Applied physics letters, 1991-11, Vol.59 (21), p.2718-2720

1991

Volltextzugriff (PDF)

Molecular-beam epitaxy growth and in situ arsenic doping of p-on-n HgCdTe heterojunctions

Journal of applied physics, 1991-02, Vol.69 (4), p.2143-2148

1991

Volltextzugriff (PDF)

Excess low frequency noise/I-V studies in p-on-n MBE LWIR Hg1−xCdxTe detectors

Journal of electronic materials, 1999-06, Vol.28 (6), p.611-616

1999

Volltextzugriff (PDF)

Dark current generating mechanisms in short wavelength infrared photovoltaic detectors

Journal of electronic materials, 1998-06, Vol.27 (6), p.722-726

1998

Volltextzugriff (PDF)

Origin of void defects in Hg1-xCdxTe grown by molecular beam epitaxy

Journal of electronic materials, 1995-09, Vol.24 (9), p.1207-1210

1995

Volltextzugriff (PDF)

p-i-n HgCdTe photodiodes grown by molecular beam epitaxy

Applied physics letters, 1991-06, Vol.58 (24), p.2806-2808

1991

Volltextzugriff (PDF)

Infrared diodes fabricated with HgCdTe grown by molecular beam epitaxy on GaAs substrates

Applied physics letters, 1989-03, Vol.54 (11), p.1025-1027

1989

Volltextzugriff (PDF)

p -type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular-beam epitaxy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1990-03, Vol.8 (2), p.1025-1033

1990

Volltextzugriff (PDF)

HgCdTe dual-band infrared photodiodes grown by molecular beam epitaxy

Journal of applied physics, 1991-10, Vol.70 (8), p.4620-4622

1991

Volltextzugriff (PDF)

Minority carrier lifetime and diffusion length in HgTe/CdTe superlattices by molecular beam epitaxy

Applied physics letters, 1992-09, Vol.61 (10), p.1196-1198

1992

Volltextzugriff (PDF)

Variable-area diode data analysis of surface and bulk effects in MWIR HgCdTe/CdTe/sapphire photodetectors

Semiconductor science and technology, 1993-06, Vol.8 (6S), p.946-952

1993

Volltextzugriff (PDF)

P-on-n arsenic-activated junctions in MOCVD LWIR HgCdTe/GaAs

Semiconductor science and technology, 1990-03, Vol.5 (3S), p.S45-S48

1990

Volltextzugriff (PDF)

Molecular beam epitaxy growth of high quantum efficiency InAs/GaSb superlattice detectors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005-05, Vol.23 (3), p.1144-1148

2005

Volltextzugriff (PDF)

1 – 25 von 132

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(105)
Mit Volltextzugriff
(121)

Publikationsform

Artikel
(130)
Tagungsberichte
(2)

Sprache

Englisch
(132)
Japanisch
(2)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Dark Currents in a Fully-Depleted LWIR HgCdTe P-on-n Heterojunction: Analytical and Numerical Simulations

Junction optimization in HgCdTe: Shockley-Read-Hall generation-recombination suppression

Numerical Device Modeling, Analysis, and Optimization of Extended-SWIR HgCdTe Infrared Detectors

Mid-wavelength infrared p-on-n Hg1-xCdxTe heterostructure detectors: 30-120 kelvin state-of-the-art performance

Planar p-on-n HgCdTe heterostructure photovoltaic detectors

1/f noise in large-area Hg1-xCdxTe photodiodes

Excess tunnel currents in AlGaAs/GaAs multiple quantum well infrared detectors

Advances in large-area Hg1-xCdxTe photovoltaic detectors for remote-sensing applications

1/f noise in very-long-wavelength infrared Hg1-xCdxTe detectors

Current mechanisms in VLWIR Hg1-xCdxTe photodiodes

Large VLWIR Hg1−xCdxTe photovoltaic detectors

Measurement of minority carrier lifetime in n-type MBE HgCdTe and its dependence on annealing

Effect of the dislocation density on minority-carrier lifetime on molecular beam epitaxial HgCdTe

Molecular-beam epitaxy growth and in situ arsenic doping of p-on-n HgCdTe heterojunctions

Excess low frequency noise/I-V studies in p-on-n MBE LWIR Hg1−xCdxTe detectors

Dark current generating mechanisms in short wavelength infrared photovoltaic detectors

Origin of void defects in Hg1-xCdxTe grown by molecular beam epitaxy

p-i-n HgCdTe photodiodes grown by molecular beam epitaxy

Infrared diodes fabricated with HgCdTe grown by molecular beam epitaxy on GaAs substrates

p -type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular-beam epitaxy

HgCdTe dual-band infrared photodiodes grown by molecular beam epitaxy

Minority carrier lifetime and diffusion length in HgTe/CdTe superlattices by molecular beam epitaxy

Variable-area diode data analysis of surface and bulk effects in MWIR HgCdTe/CdTe/sapphire photodetectors

P-on-n arsenic-activated junctions in MOCVD LWIR HgCdTe/GaAs

Molecular beam epitaxy growth of high quantum efficiency InAs/GaSb superlattice detectors

Suchergebnisse filtern