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Fabrication of sub-10 nm silicon carbon nitride resonators using a hydrogen silsesquioxane mask patterned by electron beam lithography

Microelectronic engineering, 2011-08, Vol.88 (8), p.2338-2341

2011

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Self-shadowing and surface diffusion effects in obliquely deposited thin films

Thin solid films, 1999-02, Vol.339 (1-2), p.88-94

1999

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A 3D thermal simulation tool for integrated devices-Atar

IEEE transactions on computer-aided design of integrated circuits and systems, 2001-01, Vol.20 (1), p.105-115

2001

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Fabrication of sub-10nm silicon carbon nitride resonators using a hydrogen silsesquioxane mask patterned by electron beam lithography

Microelectronic engineering, 2011-08, Vol.88 (8), p.2338-2341

2011

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Anisotropic energies of sputtered atoms under oblique ion incidence

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-02, Vol.215 (3), p.357-365

2004

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Systematic study of the interdependence of exposure and development conditions and kinetic modelling for optimizing low-energy electron beam nanolithography

Microelectronic engineering, 2010-05, Vol.87 (5), p.1104-1107

2010

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Self-organized metal networks at ion-etched Cu ∕ Si and Ag ∕ Si interfaces

Journal of applied physics, 2005-04, Vol.97 (8), p.083536-083536-8

2005

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Transient 3D heat flow analysis for integrated circuit devices using the transmission line matrix method on a quad tree mesh

Solid-state electronics, 2001-07, Vol.45 (7), p.1137-1148

2001

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Modeling 3D effects of substrate topography on step coverage and film morphology of thin metal films

Thin solid films, 2002-08, Vol.415 (1), p.32-45

2002

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Sheath structure of an electronegative plasma with cold positive ions

IEEE transactions on plasma science, 2000-02, Vol.28 (1), p.248-252

2000

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Erratum to “Self-shadowing and surface diffusion effects in obliquely deposited thin films” [Thin solid Films 339 (1999) 88–94]

Thin solid films, 1999-07, Vol.349 (1-2), p.303

1999

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A simulation study of long throw sputtering for diffusion barrier deposition into high aspect vias and contacts

IEEE transactions on electron devices, 1998-07, Vol.45 (7), p.1414-1425

1998

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Simulation of temperature cycling effects on electromigration behavior under pulsed current stress [VLSI metallization]

IEEE transactions on electron devices, 1998-02, Vol.45 (2), p.380-386

1998

Volltextzugriff (PDF)

WSi X thin films for resistors

Thin solid films, 1997, Vol.311 (1), p.299-303

1997

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Thin film microstructure modelling through line-segment simulation

Thin solid films, 1995-09, Vol.266 (1), p.83-88

1995

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Simulation of elevated temperature aluminum metallization using SIMBAD

IEEE transactions on electron devices, 1992-07, Vol.39 (7), p.1599-1606

1992

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Simulation of Microstructure and Surface Profiles of Thin Films for VLSI Metallization

MRS bulletin, 1995-11, Vol.20 (11), p.65-69

1995

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WSix thin films for resistors

Thin solid films, 1997-12, Vol.311 (1-2), p.299-303

1997

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A simulation study of copper reflow characteristics in vias

IEEE transactions on semiconductor manufacturing, 1999-08, Vol.12 (3), p.353-365

1999

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Properties of titanium and aluminum thin films deposited by collimated sputtering

Thin solid films, 1993-12, Vol.236 (1), p.267-273

1993

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Titanium sputter deposition at low pressures and long throw distances

IEEE transactions on semiconductor manufacturing, 1996-02, Vol.9 (1), p.122-127

1996

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Bombardment and gas rarefaction effects on the properties of sputtered Ti thin films

Thin solid films, 1994-12, Vol.253 (1-2), p.386-390

1994

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Thermal simulation of energetic transients in multilevel metallisation systems

Electronics letters, 1995-01, Vol.31 (22), p.1954-1956

1995

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The effects of collimation on intrinsic stress in sputter-deposited metallic thin films

Thin solid films, 1994-12, Vol.253 (1-2), p.372-376

1994

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Effects and loss of lead in doped Bi-Sr-Ca-Cu-O films

Applied physics letters, 1989-05, Vol.54 (19), p.1929-1931

1989

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Fabrication of sub-10 nm silicon carbon nitride resonators using a hydrogen silsesquioxane mask patterned by electron beam lithography

Self-shadowing and surface diffusion effects in obliquely deposited thin films

A 3D thermal simulation tool for integrated devices-Atar

Fabrication of sub-10nm silicon carbon nitride resonators using a hydrogen silsesquioxane mask patterned by electron beam lithography

Anisotropic energies of sputtered atoms under oblique ion incidence

Systematic study of the interdependence of exposure and development conditions and kinetic modelling for optimizing low-energy electron beam nanolithography

Self-organized metal networks at ion-etched Cu ∕ Si and Ag ∕ Si interfaces

Transient 3D heat flow analysis for integrated circuit devices using the transmission line matrix method on a quad tree mesh

Modeling 3D effects of substrate topography on step coverage and film morphology of thin metal films

Sheath structure of an electronegative plasma with cold positive ions

Erratum to “Self-shadowing and surface diffusion effects in obliquely deposited thin films” [Thin solid Films 339 (1999) 88–94]

A simulation study of long throw sputtering for diffusion barrier deposition into high aspect vias and contacts

Simulation of temperature cycling effects on electromigration behavior under pulsed current stress [VLSI metallization]

WSi X thin films for resistors

Thin film microstructure modelling through line-segment simulation

Simulation of elevated temperature aluminum metallization using SIMBAD

Simulation of Microstructure and Surface Profiles of Thin Films for VLSI Metallization

WSix thin films for resistors

A simulation study of copper reflow characteristics in vias

Properties of titanium and aluminum thin films deposited by collimated sputtering

Titanium sputter deposition at low pressures and long throw distances

Bombardment and gas rarefaction effects on the properties of sputtered Ti thin films

Thermal simulation of energetic transients in multilevel metallisation systems

The effects of collimation on intrinsic stress in sputter-deposited metallic thin films

Effects and loss of lead in doped Bi-Sr-Ca-Cu-O films

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