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Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3009-3015

2008

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IEEE_Xplore

Ion implantation- and radiation-induced structural modifications in amorphous SiO2

Journal of non-crystalline solids, 1993, Vol.152 (1), p.50-58

DEVINE, R. A. B

1993

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Tantalum pentoxide (Ta 2O 5) thin films for advanced dielectric applications

Materials science & engineering. R, Reports : a review journal, 1998-05, Vol.22 (6), p.269-322

1998

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The structure of SiO/sub 2/, its defects and radiation hardness

IEEE transactions on nuclear science, 1994-06, Vol.41 (3), p.452-459

Devine, R.A.B.

1994

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IEEE_Xplore

Radiation-induced charge trapping in low-k silsesquioxane-based intermetal dielectric films

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2729-2732

2002

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IEEE_Xplore

Comparison between the properties of amorphous and crystalline Ta2O5 thin films deposited on Si

Microelectronics and reliability, 1999-02, Vol.39 (2), p.261-268

1999

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Radiation damage and the role of structure in amorphous SiO2

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1990-02, Vol.46 (1-4), p.244-251

Devine, R.A.B.

1990

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Macroscopic and microscopic effects of radiation in amorphous SiO2

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1994-06, Vol.91 (1-4), p.378-390

Devine, R.A.B.

1994

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H+ and D+ associated charge buildup during annealing of Si/SiO2/Si structures

Journal of non-crystalline solids, 1997-08, Vol.216, p.116-123

1997

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Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors

Microelectronics and reliability, 2011-06, Vol.51 (6), p.1113-1117

2011

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Millitorr range PECVD of a-SiO2 films using TEOS and oxygen

Thin solid films, 1994-04, Vol.241 (1-2), p.251-254

1994

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Non-volatile memory device based on mobile protons in SiO2 thin films

Nature (London), 1997-04, Vol.386 (6625), p.587-589

1997

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X-ray irradiation effects in top contact, pentacene based field effect transistors for space related applications

Applied physics letters, 2006-04, Vol.88 (15), p.151907-151907-3

2006

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Substrate/oxide interface interaction in LaAlO 3 /Si structures

MRS proceedings, 2003, Vol.786, Article E6.12

2003

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Effect of rapid thermal annealing on radiation hardening of MOS devices

IEEE transactions on nuclear science, 1995-12, Vol.42 (6), p.1667-1673

1995

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IEEE_Xplore

Protonic nonvolatile field effect transistor memories in Si/SiO/sub 2//Si structures

IEEE transactions on nuclear science, 1997-12, Vol.44 (6), p.1789-1798

1997

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IEEE_Xplore

Isothermal annealing of E'1 defects in ion implanted SiO2

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1984-02, Vol.1 (2-3), p.378-382

Devine, R.A.B.

1984

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Substrate/oxide interface interaction in LaAlO3/Si structures

MRS proceedings, 2003, Vol.786

2003

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Molecular volume and electronic and vibrational polarizibilities for amorphous LaAlO{sub 3}

Journal of applied physics, 2004-12, Vol.96 (11)

2004

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Ion implantation- and radiation-induced structural modifications in amorphous SiO 2

Journal of non-crystalline solids, 1993, Vol.152 (1), p.50-58

Devine, R.A.B.

1993

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Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source

Applied physics letters, 1996-03, Vol.68 (13), p.1775-1777

1996

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Electronic traps in mixed Si 1− xGe xO 2 films

Journal of non-crystalline solids, 2001, Vol.280 (1), p.177-182

2001

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Comparison of experimental and calculated TO and LO oxygen vibrational modes in thin SiO 2 films

Journal of non-crystalline solids, 1995, Vol.187, p.96-100

1995

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Microscopic nature of border traps in MOS oxides

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-12, Vol.41 (6), p.1817-1827

1994

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IEEE_Xplore

Radiation damage and the role of structure in amorphous SiO 2

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1990, Vol.46 (1), p.244-251

Devine, R.A.B.

1990

Link zum Volltext

Verfügbarkeit prüfen

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Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors

Ion implantation- and radiation-induced structural modifications in amorphous SiO2

Tantalum pentoxide (Ta 2O 5) thin films for advanced dielectric applications

The structure of SiO/sub 2/, its defects and radiation hardness

Radiation-induced charge trapping in low-k silsesquioxane-based intermetal dielectric films

Comparison between the properties of amorphous and crystalline Ta2O5 thin films deposited on Si

Radiation damage and the role of structure in amorphous SiO2

Macroscopic and microscopic effects of radiation in amorphous SiO2

H+ and D+ associated charge buildup during annealing of Si/SiO2/Si structures

Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors

Millitorr range PECVD of a-SiO2 films using TEOS and oxygen

Non-volatile memory device based on mobile protons in SiO2 thin films

X-ray irradiation effects in top contact, pentacene based field effect transistors for space related applications

Substrate/oxide interface interaction in LaAlO 3 /Si structures

Effect of rapid thermal annealing on radiation hardening of MOS devices

Protonic nonvolatile field effect transistor memories in Si/SiO/sub 2//Si structures

Isothermal annealing of E'1 defects in ion implanted SiO2

Substrate/oxide interface interaction in LaAlO3/Si structures

Molecular volume and electronic and vibrational polarizibilities for amorphous LaAlO{sub 3}

Ion implantation- and radiation-induced structural modifications in amorphous SiO 2

Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source

Electronic traps in mixed Si 1− xGe xO 2 films

Comparison of experimental and calculated TO and LO oxygen vibrational modes in thin SiO 2 films

Microscopic nature of border traps in MOS oxides

Radiation damage and the role of structure in amorphous SiO 2

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