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A randomised interventional trial of ω-3-polyunsaturated fatty acids on endothelial function and disease activity in systemic lupus erythematosus

Annals of the rheumatic diseases, 2008-06, Vol.67 (6), p.841-848

2008

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Modeling of the X-irradiation Response of the Carrier Relaxation Time in P3HT:PCBM Organic-Based Photocells

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2902-2908

2012

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Origin of Radiation Induced Damage in Organic P3HT:PCBM Based Photocells

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3109-3113

2010

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Non-volatile memory device based on mobile protons in SiO2 thin films

Nature (London), 1997-04, Vol.386 (6625), p.587-589

1997

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Dielectric and infrared properties of TiO2 films containing anatase and rutile

Semiconductor science and technology, 2005-08, Vol.20 (8), p.870-875

2005

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Bias stress voltage dependence for fast and slow traps resulting in negative bias temperature instability

Journal of applied physics, 2010-01, Vol.107 (2), p.024511-024511-5

2010

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Point defect generation during high temperature annealing of the Si-SiO2 interface

Applied physics letters, 1993-11, Vol.63 (21), p.2926-2928

1993

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Effects of blockade of fast and slow inward current channels on ventricular fibrillation in the pig heart

Heart (British Cardiac Society), 1996-12, Vol.76 (6), p.513-519

1996

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Structural nature of the Si/SiO2 interface through infrared spectroscopy

Applied physics letters, 1996-05, Vol.68 (22), p.3108-3110

Devine, R. A. B.

1996

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Analysis of the vibrational mode spectra of amorphous SiO2 films

Journal of applied physics, 1995-05, Vol.77 (9), p.4343-4348

1995

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Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor

Journal of applied physics, 1998-05, Vol.83 (9), p.4823-4829

1998

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Molecular volume dependence of the electronic and ionic polarizabilities in TiO2 and SiO2

Applied physics letters, 2005-02, Vol.86 (6)

2005

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Ultraviolet radiation induced defect creation in buried SiO2 layers

Applied physics letters, 1991-10, Vol.59 (18), p.2275-2277

1991

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Temperature-Dependent Current Transport in Low-k Inorganic Dielectrics

Journal of the Electrochemical Society, 2004, Vol.151 (5), p.F128

2004

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Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices

ECS transactions, 2013, Vol.58 (7), p.49-54

2013

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Conduction mechanisms in Ta2O5/SiO2 and Ta2O5/Si3N4 stacked structures on Si

Journal of applied physics, 1999-07, Vol.86 (1), p.480-486

1999

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Electrical bias stressing and radiation induced charge trapping in HfO2/SiO2 dielectric stacks

Journal of applied physics, 2007-05, Vol.101 (10)

2007

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Comparison of duty-cycle effects at room temperature in SiON and HfO2 gate PMOS FETS

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), 2014, p.143-146

2014

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Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors

Microelectronics and reliability, 2011-06, Vol.51 (6), p.1113-1117

2011

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Extraction of recoverable and permanent trapped charge resulting from negative bias temperature instability

Physica status solidi. C, 2013-02, Vol.10 (2), p.259-262

2013

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Nondestructive measurement of interfacial SiO2 films formed during deposition and annealing of Ta2O5

Applied physics letters, 1996-04, Vol.68 (14), p.1924-1926

Devine, R. A. B.

1996

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Electrical and physical properties of room temperature deposited, mixed TiO2∕SiO2 oxides

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-03, Vol.24 (2), p.369-374

2006

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Radiation Induced Structural Changes in Amorphous SiO 2 : I. Point Defects

Japanese Journal of Applied Physics, 1992-12, Vol.31 (12S), p.4411

R. A. B. Devine, R. A. B. Devine

1992

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Densification-induced infrared and Raman spectra variations of amorphous SiO2

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1988-11, Vol.6 (6), p.3154-3156

Devine, R. A. B.

1988

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Defect reactivation and structural relaxation in deposited amorphous SiO2

Journal of applied physics, 1991-10, Vol.70 (7), p.3542-3550

DEVINE, R. A. B

1991

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A randomised interventional trial of ω-3-polyunsaturated fatty acids on endothelial function and disease activity in systemic lupus erythematosus

Modeling of the X-irradiation Response of the Carrier Relaxation Time in P3HT:PCBM Organic-Based Photocells

Origin of Radiation Induced Damage in Organic P3HT:PCBM Based Photocells

Non-volatile memory device based on mobile protons in SiO2 thin films

Dielectric and infrared properties of TiO2 films containing anatase and rutile

Bias stress voltage dependence for fast and slow traps resulting in negative bias temperature instability

Point defect generation during high temperature annealing of the Si-SiO2 interface

Effects of blockade of fast and slow inward current channels on ventricular fibrillation in the pig heart

Structural nature of the Si/SiO2 interface through infrared spectroscopy

Analysis of the vibrational mode spectra of amorphous SiO2 films

Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor

Molecular volume dependence of the electronic and ionic polarizabilities in TiO2 and SiO2

Ultraviolet radiation induced defect creation in buried SiO2 layers

Temperature-Dependent Current Transport in Low-k Inorganic Dielectrics

Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices

Conduction mechanisms in Ta2O5/SiO2 and Ta2O5/Si3N4 stacked structures on Si

Electrical bias stressing and radiation induced charge trapping in HfO2/SiO2 dielectric stacks

Comparison of duty-cycle effects at room temperature in SiON and HfO2 gate PMOS FETS

Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors

Extraction of recoverable and permanent trapped charge resulting from negative bias temperature instability

Nondestructive measurement of interfacial SiO2 films formed during deposition and annealing of Ta2O5

Electrical and physical properties of room temperature deposited, mixed TiO2∕SiO2 oxides

Radiation Induced Structural Changes in Amorphous SiO 2 : I. Point Defects

Densification-induced infrared and Raman spectra variations of amorphous SiO2

Defect reactivation and structural relaxation in deposited amorphous SiO2

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