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Newly Resolved Phonon-Assisted Transitions and Fine Structure in the Low Temperature Wavelength Modulated Absorption and Photoluminescence Spectra of 6H SiC

Materials science forum, 2019-07, Vol.963, p.341-345

2019

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High Resolution Optical Spectroscopy of Free Exciton and Electronic Band Structure near the Fundamental Gap in 4H SiC

Materials science forum, 2018-06, Vol.924, p.239-244

2018

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New evidence for the second conduction band in 4H SiC

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence

Materials science forum, 2014-02, Vol.778-780, p.273-276

2014

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Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy

Materials science forum, 2012, Vol.717-720, p.259-262

2012

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Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

Materials science forum, 2003-09, Vol.433-436, p.705-708

2003

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Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation

Materials science forum, 2000-05, Vol.338-342, p.733-736

2000

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Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC

Materials science forum, 2012, Vol.717-720, p.263-266

2012

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Columnar Morphology of Porous Silicon Carbide as a Protein-Permeable Membrane for Biosensors and Other Applications

Materials science forum, 2006-10, Vol.527-529, p.751-754

2006

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Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C

Materials science forum, 2011-03, Vol.679-680, p.237-240

2011

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Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiC

Materials science forum, 2010-01, Vol.645-648, p.853-856

2010

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Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

Materials science forum, 2010-01, Vol.645-648, p.423-426

2010

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Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin Scattering

Materials science forum, 2010-01, Vol.645-648, p.447-450

2010

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Columnar Pore Growth in n-Type 6H SiC

Materials science forum, 2006-10, Vol.527-529, p.739-742

2006

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A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC

Materials science forum, 2006-10, Vol.527-529, p.743-746, Article 743

2006

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Novel Use of Columnar Porous Silicon Carbide Structures as Nanoimprint Lithography Stamps

Materials science forum, 2009, Vol.600-603, p.871-874

2009

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A Short Synopsis of the Current Status of Porous SiC and GaN

Materials Science Forum, 2005-05, Vol.483-485, p.251-256

2005

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Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC

Materials science forum, 2006-10, Vol.527-529, p.585-588

2006

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Electrochemical Polishing of p-Type 4H SiC

Materials science forum, 2009-01, Vol.615-617, p.601-604

2009

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Brillouin Spectra of Porous p-Type 6H-SiC

Materials science forum, 2006-10, Vol.527-529, p.747-750

2006

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CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates

Materials science forum, 2006-10, Vol.527-529, p.255-258

2006

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New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiC

Materials science forum, 2010-04, Vol.645-648, p.411-414

2010

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Nano-Columnar Pore Formation in the Photo-Electrochemical Etching of n-Type 6H SiC

Materials science forum, 2007-09, Vol.556-557, p.741-744

2007

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Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers

Materials science forum, 2010-01, Vol.645-648, p.427-430

2010

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Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

Materials science forum, 2010-01, Vol.645-648, p.419-422

2010

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Newly Resolved Phonon-Assisted Transitions and Fine Structure in the Low Temperature Wavelength Modulated Absorption and Photoluminescence Spectra of 6H SiC

High Resolution Optical Spectroscopy of Free Exciton and Electronic Band Structure near the Fundamental Gap in 4H SiC

New evidence for the second conduction band in 4H SiC

Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence

Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy

Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation

Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC

Columnar Morphology of Porous Silicon Carbide as a Protein-Permeable Membrane for Biosensors and Other Applications

Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C

Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiC

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin Scattering

Columnar Pore Growth in n-Type 6H SiC

A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC

Novel Use of Columnar Porous Silicon Carbide Structures as Nanoimprint Lithography Stamps

A Short Synopsis of the Current Status of Porous SiC and GaN

Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC

Electrochemical Polishing of p-Type 4H SiC

Brillouin Spectra of Porous p-Type 6H-SiC

CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates

New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiC

Nano-Columnar Pore Formation in the Photo-Electrochemical Etching of n-Type 6H SiC

Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

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