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Thermal expansion of III–V materials in atomistic models using empirical Tersoff potentials

Electronics letters, 2015-09, Vol.51 (18), p.1455-1457

Detz, H

2015

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Singular charge fluctuations at a magnetic quantum critical point

Science (American Association for the Advancement of Science), 2020-01, Vol.367 (6475), p.285-288

2020

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All-optical adaptive control of quantum cascade random lasers

Nature communications, 2020-11, Vol.11 (1), p.5530-5530, Article 5530

2020

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High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K

Applied physics letters, 2012-11, Vol.101 (21), p.211117

2012

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4.3 μm quantum cascade detector in pixel configuration

Optics express, 2016-07, Vol.24 (15), p.17041-17049

2016

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Quasi One-Dimensional Metal–Semiconductor Heterostructures

Nano letters, 2019-06, Vol.19 (6), p.3892-3897

2019

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Detectivity enhancement in quantum well infrared photodetectors utilizing a photonic crystal slab resonator

Optics express, 2012-02, Vol.20 (5), p.5622-5628

2012

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Modeling the elastic properties of the ternary III-V alloys InGaAs, InAlAs and GaAsSb using Tersoff potentials for binary compounds

Semiconductor science and technology, 2013-08, Vol.28 (8), p.85011

2013

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Nucleation of Ga droplets on Si and SiOx surfaces

Nanotechnology, 2015-08, Vol.26 (31), p.315601

2015

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Photonic crystal slab quantum well infrared photodetector

Applied physics letters, 2011-01, Vol.98 (1), p.011105-011105-3

2011

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Resonant metamaterial detectors based on THz quantum-cascade structures

Scientific reports, 2014-03, Vol.4 (1), p.4269, Article 4269

2014

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Quantum cascade detector utilizing the diagonal-transition scheme for high quality cavities

Optics express, 2015-03, Vol.23 (5), p.6283-6291

2015

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THz quantum cascade lasers with wafer bonded active regions

Optics express, 2012-10, Vol.20 (21), p.23832-23837

2012

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Si doping of MBE grown bulk GaAsSb on InP

Journal of crystal growth, 2011-05, Vol.323 (1), p.42-44

2011

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Quantum cascade laser utilising aluminium-free material system: InGaAs/ GaAsSb lattice-matched to InP

Electronics letters, 2009, Vol.45 (20), p.1031-1033

2009

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Atomistic modeling of bond lengths in random and ordered III-V alloys

Journal of applied physics, 2013-09, Vol.114 (12)

2013

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Octave-spanning low-loss mid-IR waveguides based on semiconductor-loaded plasmonics

Optics express, 2021-12, Vol.29 (26), p.43567

2021

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Growth of one-dimensional III–V structures on Si nanowires and pre-treated planar Si surfaces

Journal of crystal growth, 2009-03, Vol.311 (7), p.1859-1862

2009

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Improved InGaAs/GaAsSb quantum cascade laser active region designs

Journal of modern optics, 2011-12, Vol.58 (21), p.2015-2020

2011

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Scattering strength dependence of terahertz random lasers

Journal of applied physics, 2019-04, Vol.125 (15)

2019

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Growth rate dependence of boron incorporation into BxGa1−xAs layers

Journal of crystal growth, 2017-11, Vol.477, p.77-81

2017

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Structure and mid-infrared optical properties of spin-coated polyethylene films developed for integrated photonics applications

Optical materials express, 2022-06, Vol.12 (6), p.2168

2022

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Resonant tunneling diodes strongly coupled to the cavity field

Applied physics letters, 2020-06, Vol.116 (22)

2020

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A Knudsen cell approach for the molecular beam epitaxy of the heavy fermion compound YbRh2Si2

Journal of crystal growth, 2022-10, Vol.595, Article 126804

2022

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Growth rate dependence of boron incorporation into B^sub x^Ga^sub 1-x^As layers

Journal of crystal growth, 2017-11, Vol.477, p.77

2017

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Thermal expansion of III–V materials in atomistic models using empirical Tersoff potentials

Singular charge fluctuations at a magnetic quantum critical point

All-optical adaptive control of quantum cascade random lasers

High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K

4.3 μm quantum cascade detector in pixel configuration

Quasi One-Dimensional Metal–Semiconductor Heterostructures

Detectivity enhancement in quantum well infrared photodetectors utilizing a photonic crystal slab resonator

Modeling the elastic properties of the ternary III-V alloys InGaAs, InAlAs and GaAsSb using Tersoff potentials for binary compounds

Nucleation of Ga droplets on Si and SiOx surfaces

Photonic crystal slab quantum well infrared photodetector

Resonant metamaterial detectors based on THz quantum-cascade structures

Quantum cascade detector utilizing the diagonal-transition scheme for high quality cavities

THz quantum cascade lasers with wafer bonded active regions

Si doping of MBE grown bulk GaAsSb on InP

Quantum cascade laser utilising aluminium-free material system: InGaAs/ GaAsSb lattice-matched to InP

Atomistic modeling of bond lengths in random and ordered III-V alloys

Octave-spanning low-loss mid-IR waveguides based on semiconductor-loaded plasmonics

Growth of one-dimensional III–V structures on Si nanowires and pre-treated planar Si surfaces

Improved InGaAs/GaAsSb quantum cascade laser active region designs

Scattering strength dependence of terahertz random lasers

Growth rate dependence of boron incorporation into BxGa1−xAs layers

Structure and mid-infrared optical properties of spin-coated polyethylene films developed for integrated photonics applications

Resonant tunneling diodes strongly coupled to the cavity field

A Knudsen cell approach for the molecular beam epitaxy of the heavy fermion compound YbRh2Si2

Growth rate dependence of boron incorporation into B^sub x^Ga^sub 1-x^As layers

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