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Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

Applied physics letters, 2013-05, Vol.102 (19)

2013

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Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire

Applied physics letters, 2011-04, Vol.98 (15), p.151102-151102-3

2011

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Thermal characterization of gallium nitride p-i-n diodes

Applied physics letters, 2018-02, Vol.112 (7)

2018

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High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1110-1115

2015

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Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells

Applied physics letters, 2010-01, Vol.96 (3), p.031906-031906-3

2010

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Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition

Applied physics letters, 2015-12, Vol.107 (23)

2015

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Atomic-Scale Phase Transition of Epitaxial GaN on Nanostructured Si(001): Activation and Beyond

Crystal growth & design, 2016-04, Vol.16 (4), p.2183-2189

2016

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Light-emitting diode development on polar and non-polar GaN substrates

Journal of crystal growth, 2008-08, Vol.310 (17), p.3987-3991

2008

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Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes

Thin solid films, 2010, Vol.518 (6), p.1732-1736

2010

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Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

Journal of electronic materials, 2008-05, Vol.37 (5), p.607-610

2008

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Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Journal of crystal growth, 2009-05, Vol.311 (10), p.2937-2941

2009

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Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy

Applied physics letters, 1993-11, Vol.63 (19), p.2676-2678

1993

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Analysis of deep levels in n -type GaN by transient capacitance methods

Journal of applied physics, 1994-07, Vol.76 (1), p.304-309

1994

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Optical and structural properties of InGaN/GaN multiple quantum well structure grown by metalorganic chemical vapor deposition

Thin solid films, 2006-03, Vol.498 (1), p.123-127

2006

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Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

Applied physics letters, 1992-11, Vol.61 (22), p.2688-2690

1992

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Deep levels in the upper band-gap region of lightly Mg-doped GaN

Applied physics letters, 1996-03, Vol.68 (10), p.1362-1364

1996

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Determination of the conduction band electron effective mass in hexagonal GaN

Japanese Journal of Applied Physics, 1995, Vol.34 (9B), p.L1178-L1179

1995

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Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth

Journal of crystal growth, 2007, Vol.298, p.272-275

2007

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Characterization of GaInN/GaN layers for green emitting laser diodes

Journal of crystal growth, 2009-05, Vol.311 (10), p.2942-2947

2009

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Improved performance of GaInN based deep green light emitting diodes through V-defect reduction

Physica status solidi. C, 2008-05, Vol.5 (6), p.2207-2209

2008

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Shallow donors in GaN—The binding energy and the electron effective mass

Solid state communications, 1995-09, Vol.95 (9), p.597-600

1995

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Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy

Journal of electronic materials, 2008-05, Vol.37 (5), p.641-645

2008

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Low-Temperature Geiger-Mode Characterization of a Gallium Nitride p-i-n Avalanche Photodiode

IEEE journal of quantum electronics, 2023-06, Vol.59 (3), p.1-1

2023

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Junction temperature analysis in green light emitting diode dies on sapphire and GaN substrates

Physica status solidi. C, 2008-05, Vol.5 (6), p.2247-2249

2008

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Development of High Power Green Light Emitting Diode Chips

MRS Internet journal of nitride semiconductor research, 2005-01, Vol.10, p.1-1, Article e2

2005

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Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire

Thermal characterization of gallium nitride p-i-n diodes

High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal

Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells

Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition

Atomic-Scale Phase Transition of Epitaxial GaN on Nanostructured Si(001): Activation and Beyond

Light-emitting diode development on polar and non-polar GaN substrates

Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes

Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy

Analysis of deep levels in n -type GaN by transient capacitance methods

Optical and structural properties of InGaN/GaN multiple quantum well structure grown by metalorganic chemical vapor deposition

Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

Deep levels in the upper band-gap region of lightly Mg-doped GaN

Determination of the conduction band electron effective mass in hexagonal GaN

Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth

Characterization of GaInN/GaN layers for green emitting laser diodes

Improved performance of GaInN based deep green light emitting diodes through V-defect reduction

Shallow donors in GaN—The binding energy and the electron effective mass

Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy

Low-Temperature Geiger-Mode Characterization of a Gallium Nitride p-i-n Avalanche Photodiode

Junction temperature analysis in green light emitting diode dies on sapphire and GaN substrates

Development of High Power Green Light Emitting Diode Chips

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