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Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement

Nanotechnology, 2016-12, Vol.27 (50), p.505301-505301

2016

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Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell

Nanotechnology, 2023-04, Vol.34 (26), p.265704

2023

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In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate

Nanotechnology, 2018-07, Vol.29 (30), p.305705

2018

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Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration

Journal of crystal growth, 2017-11, Vol.477, p.45-49

2017

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Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates

Journal of crystal growth, 2019-04, Vol.512, p.6-10

2019

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On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations

Semiconductor science and technology, 2011-06, Vol.26 (6), p.064008

2011

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Transport inefficiency in branched-out mesoscopic networks: an analog of the Braess paradox

Physical review letters, 2012-02, Vol.108 (7), p.076802-076802, Article 076802

2012

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Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE

Journal of crystal growth, 2019-04, Vol.512, p.11-15

2019

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In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy

Nanotechnology, 2022-04, Vol.33 (14), p.145201

2022

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Two-dimensional Rutherford-like scattering in ballistic nanodevices

Physical review. B, 2018-08, Vol.98 (7), p.075310, Article 075310

2018

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Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III-V semiconductors

Nanotechnology, 2019-04, Vol.30 (15), p.155301-155301

2019

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Impact of P In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy

Nanotechnology, 2015-07, Vol.26 (29), p.295301-8

2015

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Influence of nanoscale faceting on the tunneling properties of near broken gap InAs AlGaSb heterojunctions grown by selective area epitaxy

Nanotechnology, 2014-11, Vol.25 (46), p.465302-465302

2014

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The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism

Applied physics letters, 2013-02, Vol.102 (5), p.052102-1-5

2013

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Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness

Journal of applied physics, 2011-01, Vol.109 (2), p.023509-023509-6

2011

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Scanning gate spectroscopy of transport across a quantum Hall nano-island

New journal of physics, 2013-01, Vol.15 (1), p.13049-10

2013

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Imaging Coulomb islands in a quantum Hall interferometer

Nature communications, 2010-07, Vol.1 (4), p.1-6, Article 39

2010

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Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications

IEEE transactions on microwave theory and techniques, 2008-12, Vol.56 (12), p.2685-2691

2008

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Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP

Journal of applied physics, 2012-06, Vol.111 (12)

2012

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Une application du plan de soin gériatrique selon l'arrêté royal du 29.01.2007 au sein d'un hôpital général

Revue médicale de Bruxelles, 2010-05, Vol.31 (3), p.149-156

2010

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Mechanism of formation of the misfit dislocations at the cubic materials interfaces

Applied physics letters, 2012-06, Vol.100 (26), p.262110-1-5

2012

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Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer

Applied physics letters, 2012-10, Vol.101 (14), p.142111-1-4

2012

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High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates

Journal of crystal growth, 2007-04, Vol.301, p.194-198

2007

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Coherent tunnelling across a quantum point contact in the quantum Hall regime

Scientific reports, 2013, Vol.3 (1), p.1416-1416, Article 1416

2013

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On the effect of δ-doping in self-switching diodes

Applied physics letters, 2014-09, Vol.105 (9), p.Article Number: 093505

2014

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Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement

Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell

In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate

Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration

Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates

On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations

Transport inefficiency in branched-out mesoscopic networks: an analog of the Braess paradox

Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE

In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy

Two-dimensional Rutherford-like scattering in ballistic nanodevices

Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III-V semiconductors

Impact of P In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy

Influence of nanoscale faceting on the tunneling properties of near broken gap InAs AlGaSb heterojunctions grown by selective area epitaxy

The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism

Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness

Scanning gate spectroscopy of transport across a quantum Hall nano-island

Imaging Coulomb islands in a quantum Hall interferometer

Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications

Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP

Une application du plan de soin gériatrique selon l'arrêté royal du 29.01.2007 au sein d'un hôpital général

Mechanism of formation of the misfit dislocations at the cubic materials interfaces

Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer

High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates

Coherent tunnelling across a quantum point contact in the quantum Hall regime

On the effect of δ-doping in self-switching diodes

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