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Hall effect and Raman analysis of residual damage and free electron concentration in Si-implanted GaAs: a quest for better doping efficiency

The Journal of physics and chemistry of solids, 2005-07, Vol.66 (7), p.1158-1163

2005

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Ion beam synthesis of buried Zn-VI quantum dots in SiO2- grazing incidence small-angle X-ray scattering studies

Journal of applied crystallography, 2003-06, Vol.36 (3-1), p.439-442

2003

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Grazing incidence small-angle X-ray scattering studies of the synthesis and growth of CdS quantum dots from constituent atoms in SiO2 matrix

Journal of applied crystallography, 2003-06, Vol.36 (3-1), p.443-446

2003

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GISAXS studies of structural modifications in ion-beam amorphized Ge

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-08, Vol.249 (1-2), p.114-117

2006

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GISAXS studies of morphology and size distribution of CdS nanocrystals formed in SiO2 by ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-01, Vol.200 (Complete), p.191-195

2003

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Electrical and optical absorption studies of Cu7GeS5I fast-ion conductor

The Journal of physics and chemistry of solids, 2002-02, Vol.63 (2), p.267-271

2002

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GISAXS study of shape and size of CDS nanocrystals formed in monocrystalline silicon by ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003, Vol.200 (Complete), p.138-141

2003

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Electric conductivity and optical absorption edge of Cu6P(SexS1-x)5I fast-ion conductors in the selenium-rich region

The Journal of physics and chemistry of solids, 2001-04, Vol.62 (4), p.665-672

2001

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Implantation-induced disorder in amorphous Ge: Production and relaxation

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2001-04, Vol.175, p.21-25

2001

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Experimental evidence of the self-compensation mechanism in CdS

Journal of crystal growth, 1999-02, Vol.197 (3), p.612-615

1999

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The excitonic processes and Urbach rule in Cu6P(S1-xSex)5I crystals in the sulfur-rich region

Materials research bulletin, 2001, Vol.36 (1-2), p.123-135

2001

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Electrical and optical absorption studies of Cu 7GeS 5I fast-ion conductor

The Journal of physics and chemistry of solids, 2002, Vol.63 (2), p.267-271

2002

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Structural modifications in amorphous Ge produced by ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-05, Vol.178 (1), p.192-195

2001

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Electric conductivity and optical absorption edge of Cu 6P(Se xS 1− x) 5I fast-ion conductors in the selenium-rich region

The Journal of physics and chemistry of solids, 2001, Vol.62 (4), p.665-672

2001

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The excitonic processes and Urbach rule in Cu 6P(S 1-xSe x) 5I crystals in the sulfur-rich region

Materials research bulletin, 2001, Vol.36 (1), p.123-135

2001

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Reaction of hexanuclear niobium and tantalum halide clusters with mercury(II) halides. II. Semiconducting compounds with [Ta 6Cl 12] 3+ unit

Solid state sciences, 1999-10, Vol.1 (7), p.483-495

1999

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Comparative analysis of the implantation-induced structural modifications in GaAs and Ge

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-02, Vol.216, p.318-323

Desnica-Frankovic, I.D.

2004

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Influence of stoichiometry deviations on properties of ion-beam synthesized CdSe QDs

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-08, Vol.238 (1-4), p.302-305

2005

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The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-08, Vol.238 (1-4), p.272-275

2005

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Direct ion beam synthesis of II–VI nanocrystals

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-02, Vol.216, p.407-413

2004

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Analysis of 2D GISAXS patterns obtained on semiconductor nanocrystals

Vacuum, 2003-05, Vol.71 (1), p.65-70

2003

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The Role of Cation Vacancy in Compensation of II-VI Compounds by Fast Diffusors - Example of Cu in CdS

Materials science forum, 1997-01, Vol.258-263, p.1347-1352

1997

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Formation of CdS nanocrystals in SiO2 by ion implantation

Journal of non-crystalline solids, 2002-04, Vol.299-302 (2), p.1100-1104

2002

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Metastable Amorphous Structure in Ion Implanted GaAs

Materials science forum, 1997-01, Vol.258-263, p.1057-1062

1997

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Grazing incidence small-angle X-ray scattering studies of the synthesis and growth of CdS quantum dots from constituent atoms in SiO 2 matrix

Journal of applied crystallography, 2003-06, Vol.36 (3), p.443-446

2003

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Hall effect and Raman analysis of residual damage and free electron concentration in Si-implanted GaAs: a quest for better doping efficiency

Ion beam synthesis of buried Zn-VI quantum dots in SiO2- grazing incidence small-angle X-ray scattering studies

Grazing incidence small-angle X-ray scattering studies of the synthesis and growth of CdS quantum dots from constituent atoms in SiO2 matrix

GISAXS studies of structural modifications in ion-beam amorphized Ge

GISAXS studies of morphology and size distribution of CdS nanocrystals formed in SiO2 by ion implantation

Electrical and optical absorption studies of Cu7GeS5I fast-ion conductor

GISAXS study of shape and size of CDS nanocrystals formed in monocrystalline silicon by ion implantation

Electric conductivity and optical absorption edge of Cu6P(SexS1-x)5I fast-ion conductors in the selenium-rich region

Implantation-induced disorder in amorphous Ge: Production and relaxation

Experimental evidence of the self-compensation mechanism in CdS

The excitonic processes and Urbach rule in Cu6P(S1-xSex)5I crystals in the sulfur-rich region

Electrical and optical absorption studies of Cu 7GeS 5I fast-ion conductor

Structural modifications in amorphous Ge produced by ion implantation

Electric conductivity and optical absorption edge of Cu 6P(Se xS 1− x) 5I fast-ion conductors in the selenium-rich region

The excitonic processes and Urbach rule in Cu 6P(S 1-xSe x) 5I crystals in the sulfur-rich region

Reaction of hexanuclear niobium and tantalum halide clusters with mercury(II) halides. II. Semiconducting compounds with [Ta 6Cl 12] 3+ unit

Comparative analysis of the implantation-induced structural modifications in GaAs and Ge

Influence of stoichiometry deviations on properties of ion-beam synthesized CdSe QDs

The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2

Direct ion beam synthesis of II–VI nanocrystals

Analysis of 2D GISAXS patterns obtained on semiconductor nanocrystals

The Role of Cation Vacancy in Compensation of II-VI Compounds by Fast Diffusors - Example of Cu in CdS

Formation of CdS nanocrystals in SiO2 by ion implantation

Metastable Amorphous Structure in Ion Implanted GaAs

Grazing incidence small-angle X-ray scattering studies of the synthesis and growth of CdS quantum dots from constituent atoms in SiO 2 matrix

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