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P-type conductivity and suppression of green luminescence in Mg/N co-implanted GaN by gyrotron microwave annealing

Journal of applied physics, 2021-08, Vol.130 (8)

2021

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p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing

Journal of applied physics, 2020-08, Vol.128 (8)

2020

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Activation of ion implanted Si in GaN using a dual AlN annealing cap

Journal of applied physics, 2009-02, Vol.105 (3), p.033713-033713-7

2009

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Growth of GaN films on PLD-deposited TaC substrates

Journal of crystal growth, 2010-09, Vol.312 (19), p.2661-2670

2010

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Deep-level transient spectroscopy study on double implanted n+–p and p+–n 4H-SiC diodes

Journal of applied physics, 2004-01, Vol.95 (1), p.69-75

2004

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Improved performance of Schottky diodes on pendeoepitaxial gallium nitride

Applied physics letters, 2008-09, Vol.93 (9)

2008

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Structural and Chemical Comparison of Graphite and BN/AlN Caps Used for Annealing Ion Implanted SiC

Journal of electronic materials, 2008-06, Vol.37 (6), p.917-924

2008

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Electrical, CL, EPR and RBS study of annealed SiC implanted with Al or Al and C

Physica status solidi. A, Applied research, 2004-02, Vol.201 (3), p.486-496

2004

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Al, B, and Ga ion-implantation doping of SiC

Journal of electronic materials, 2000-11, Vol.29 (11), p.1340-1345

2000

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Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps

Materials science forum, 2007-09, Vol.556-557, p.213-218

2007

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Effectiveness of AlN encapsulant in annealing ion-implanted SiC

Journal of applied physics, 1999-07, Vol.86 (2), p.746-751

1999

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Advances in Pulsed-Laser-Deposited AlN Thin Films for High-Temperature Capping, Device Passivation, and Piezoelectric-Based RF MEMS/NEMS Resonator Applications

Journal of electronic materials, 2006-04, Vol.35 (4), p.777-794

2006

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(Invited) Challenges the UWBG Semiconductors AlGaN, Diamond, and Ga 2 O 3 Must Master to Compete with SiC and GaN HPE Devices

ECS transactions, 2017-08, Vol.80 (7), p.3-16

2017

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A comparison of graphite and AlN caps used for annealing ion-implanted SiC

Journal of electronic materials, 2002-06, Vol.31 (6), p.568-575

2002

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Assessment of the pendeo-epitaxy effect on 2DEG mobility in III-nitride HEMT heterostructures

Physica status solidi. C, 2008-05, Vol.5 (6), p.1980-1982

2008

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Variations in the Effects of Implanting Al at Different Concentrations into SiC

Materials science forum, 2006-10, Vol.527-529, p.831-834

2006

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Comparison of Graphite and BN/AIN Annealing Caps for Ion Implanted SIC

Materials science forum, 2007, Vol.556-557, p.575-578

2007

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Effects of high-temperature anneals on 4H–SiC Implanted with Al or Al and Si

Journal of applied physics, 2004-11, Vol.96 (10), p.5613-5618

2004

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Characterization with TEM of AlN/GaN Heterostructures for Implant Activation Annealing

Microscopy and microanalysis, 2008-08, Vol.14 (S2), p.462-463

2008

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Observation of thermal-annealing evolution of defects in ion-implanted 4H-SiC by luminescence

Materials science forum, 2006, Vol.527-529, p.847-850

2006

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Structural Defects Formed in Al-Implanted and Annealed 4H-SiC

Materials science forum, 2004-01, Vol.457-460, p.889-892

2004

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Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

Journal of electronic materials, 2006-04, Vol.35 (4), p.777-794

2006

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Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC

Materials science forum, 2004-01, Vol.457-460, p.929-932

2004

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Sub-100 nm radius of curvature wide-band gap III-nitride vacuum microelectronic field emitter structures created by inductively coupled plasma etching

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2004-07, Vol.22 (4), p.1847-1851

2004

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Novel Gyrotron Beam Annealing Method for Mg-Implanted Bulk GaN

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-6

2019

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P-type conductivity and suppression of green luminescence in Mg/N co-implanted GaN by gyrotron microwave annealing

p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing

Activation of ion implanted Si in GaN using a dual AlN annealing cap

Growth of GaN films on PLD-deposited TaC substrates

Deep-level transient spectroscopy study on double implanted n+–p and p+–n 4H-SiC diodes

Improved performance of Schottky diodes on pendeoepitaxial gallium nitride

Structural and Chemical Comparison of Graphite and BN/AlN Caps Used for Annealing Ion Implanted SiC

Electrical, CL, EPR and RBS study of annealed SiC implanted with Al or Al and C

Al, B, and Ga ion-implantation doping of SiC

Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps

Effectiveness of AlN encapsulant in annealing ion-implanted SiC

Advances in Pulsed-Laser-Deposited AlN Thin Films for High-Temperature Capping, Device Passivation, and Piezoelectric-Based RF MEMS/NEMS Resonator Applications

(Invited) Challenges the UWBG Semiconductors AlGaN, Diamond, and Ga 2 O 3 Must Master to Compete with SiC and GaN HPE Devices

A comparison of graphite and AlN caps used for annealing ion-implanted SiC

Assessment of the pendeo-epitaxy effect on 2DEG mobility in III-nitride HEMT heterostructures

Variations in the Effects of Implanting Al at Different Concentrations into SiC

Comparison of Graphite and BN/AIN Annealing Caps for Ion Implanted SIC

Effects of high-temperature anneals on 4H–SiC Implanted with Al or Al and Si

Characterization with TEM of AlN/GaN Heterostructures for Implant Activation Annealing

Observation of thermal-annealing evolution of defects in ion-implanted 4H-SiC by luminescence

Structural Defects Formed in Al-Implanted and Annealed 4H-SiC

Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC

Sub-100 nm radius of curvature wide-band gap III-nitride vacuum microelectronic field emitter structures created by inductively coupled plasma etching

Novel Gyrotron Beam Annealing Method for Mg-Implanted Bulk GaN

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