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Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

Materials science in semiconductor processing, 2014-06, Vol.22, p.37-43

2014

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Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure

Materials science in semiconductor processing, 2014-01, Vol.17, p.74-80

2014

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Characterization of reduced pressure chemical vapor deposited Si0.8Ge0.2/Si multi-layers

Materials science in semiconductor processing, 2013-02, Vol.16 (1), p.126-130

2013

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Characterization of n-type Ge layers on Si (100) substrates grown by rapid thermal chemical vapor deposition

Materials science in semiconductor processing, 2013-12, Vol.16 (6), p.1405-1409

2013

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Optical properties of hybrid Si1−xGex/Si quantum dot/quantum well structures grown on Si by RPCVD

Materials science in semiconductor processing, 2014-01, Vol.17, p.178-183

2014

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Nanoscale dry etching of germanium by using inductively coupled CF4 plasma

Electronic Materials Letters, 2012, 8(4), , pp.423-428

2012

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Growth and Characterization of Si1-xGex QDs on Si/Si0.8Ge0.2 Layer

Electronic Materials Letters, 2012, 8(6), , pp.559-563

2012

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Optical properties of hybrid Si1−Ge /Si quantum dot/quantum well structures grown on Si by RPCVD

Materials science in semiconductor processing, 2014-01, Vol.17, p.178-183

2014

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Electroluminescence of n-Ge/i-Ge/p-Si Hetero Junction PIN LEDs

ECS transactions, 2013, Vol.58 (8), p.119-132

2013

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Optical Characterization of Ge-on-Si Grown by using RTCVD

ECS transactions, 2013, Vol.50 (9), p.381-386

2013

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Effect of phosphorus doping concentration on n-type Ge layer growth

Journal of the Korean Physical Society, 2014, 64(5), , pp.715-721

2014

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Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD

Journal of the Korean Physical Society, 2014, 64(3), , pp.443-450

2014

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Optical characterization of tensile-strained a p-type Ge layer on a Si (100) substrate

Journal of the Korean Physical Society, 2013, 63(5), , pp.1034-1039

2013

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Growth and characterization of Si1−x Getx QDs on Si/Si0.8Ge0.2 layer

Electronic materials letters, 2012-12, Vol.8 (6), p.559-563

2012

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Growth and characterization of Si1−xGetx QDs on Si/Si0.8Ge0.2 layer

Electronic materials letters, 2012-12, Vol.8 (6), p.559-563

2012

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Optical Characterization of Ge-on-Si Grown by using RTCVD

Meeting abstracts (Electrochemical Society), 2012-06, Vol.MA2012-02 (43), p.3142-3142

2012

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Electroluminescence of n-Ge/i-Ge/p-Si Hetero Junction PIN LEDs

Meeting abstracts (Electrochemical Society), 2013-10, Vol.MA2013-02 (26), p.1986-1986

2013

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Optical Property of Si 0.8 Ge 0.2 /Si Multilayer Grown by Using RPCVD

Meeting abstracts (Electrochemical Society), 2010-07, Vol.MA2010-02 (30), p.1876-1876

2010

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6-month versus 12-month or longer dual antiplatelet therapy after percutaneous coronary intervention in patients with acute coronary syndrome (SMART-DATE): a randomised, open-label, non-inferiority trial

The Lancet (British edition), 2018-03, Vol.391 (10127), p.1274-1284

2018

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Effect of P2Y12 Inhibitor Monotherapy vs Dual Antiplatelet Therapy on Cardiovascular Events in Patients Undergoing Percutaneous Coronary Intervention: The SMART-CHOICE Randomized Clinical Trial

JAMA : the journal of the American Medical Association, 2019-06, Vol.321 (24), p.2428

2019

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Classification of Alzheimer's Progression Using fMRI Data

Sensors (Basel, Switzerland), 2023-07, Vol.23 (14), p.6330

2023

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Effect of a surface active agent on performance of zinc/bromine redox flow batteries: Improvement in current efficiency and system stability

Journal of power sources, 2015-02, Vol.275, p.294-297

2015

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Dual function of quaternary ammonium in Zn/Br redox flow battery: Capturing the bromine and lowering the charge transfer resistance

Electrochimica acta, 2014-05, Vol.127, p.397-402

2014

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Power-Law Processor Over Segmentation for Variable Length Transients Detection

IEEE signal processing letters, 2020, Vol.27, p.1065-1069

2020

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OsMADS50 and OsMADS56 function antagonistically in regulating long day (LD)-dependent flowering in rice

Plant, cell and environment, 2009-10, Vol.32 (10), p.1412-1427

2009

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Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure

Characterization of reduced pressure chemical vapor deposited Si0.8Ge0.2/Si multi-layers

Characterization of n-type Ge layers on Si (100) substrates grown by rapid thermal chemical vapor deposition

Optical properties of hybrid Si1−xGex/Si quantum dot/quantum well structures grown on Si by RPCVD

Nanoscale dry etching of germanium by using inductively coupled CF4 plasma

Growth and Characterization of Si1-xGex QDs on Si/Si0.8Ge0.2 Layer

Optical properties of hybrid Si1−Ge /Si quantum dot/quantum well structures grown on Si by RPCVD

Electroluminescence of n-Ge/i-Ge/p-Si Hetero Junction PIN LEDs

Optical Characterization of Ge-on-Si Grown by using RTCVD

Effect of phosphorus doping concentration on n-type Ge layer growth

Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD

Optical characterization of tensile-strained a p-type Ge layer on a Si (100) substrate

Growth and characterization of Si1−x Getx QDs on Si/Si0.8Ge0.2 layer

Growth and characterization of Si1−xGetx QDs on Si/Si0.8Ge0.2 layer

Optical Characterization of Ge-on-Si Grown by using RTCVD

Electroluminescence of n-Ge/i-Ge/p-Si Hetero Junction PIN LEDs

Optical Property of Si 0.8 Ge 0.2 /Si Multilayer Grown by Using RPCVD

6-month versus 12-month or longer dual antiplatelet therapy after percutaneous coronary intervention in patients with acute coronary syndrome (SMART-DATE): a randomised, open-label, non-inferiority trial

Effect of P2Y12 Inhibitor Monotherapy vs Dual Antiplatelet Therapy on Cardiovascular Events in Patients Undergoing Percutaneous Coronary Intervention: The SMART-CHOICE Randomized Clinical Trial

Classification of Alzheimer's Progression Using fMRI Data

Effect of a surface active agent on performance of zinc/bromine redox flow batteries: Improvement in current efficiency and system stability

Dual function of quaternary ammonium in Zn/Br redox flow battery: Capturing the bromine and lowering the charge transfer resistance

Power-Law Processor Over Segmentation for Variable Length Transients Detection

OsMADS50 and OsMADS56 function antagonistically in regulating long day (LD)-dependent flowering in rice

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